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公开(公告)号：EP2261637B1
公开(公告)日：2013-04-10
申请号：EP09806613.7
申请日：2009-07-02
CPC分类号： G01N21/9501 , G01N21/3563 , G01N21/55 , G01N21/8422 , G01R31/2831 , H01L31/1884 , Y10T29/53126
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公开(公告)号：EP2485264A1
公开(公告)日：2012-08-08
申请号：EP10820198.9
申请日：2010-05-06
IPC分类号： H01L31/04
CPC分类号： H01L31/022466 , H01L31/076 , Y02E10/548
摘要： A photovoltaic device comprising an intermediate contact layer for which the reflection characteristics have been optimized. The photovoltaic device (100) comprises a transparent electrode layer (2), which is disposed on a substrate (1) and has a textured structure on the surface opposite the substrate (1), a photovoltaic layer (3) composed of two electric power generation layers (91, 92), a back electrode layer (4), and an intermediate contact layer (5) disposed between the two electric power generation layers (91, 92), wherein the intermediate contact layer (5) comprises a titanium oxide film comprising mainly titanium oxide and a backside transparent conductive film comprising mainly a transparent conductive oxide, with the titanium oxide film disposed nearer the substrate (1), and the thickness of the titanium oxide film is a value that falls within a range defined as being from 65 to 110 nm inclusive when the thickness of the backside transparent conductive film is 5 nm, and similarly, from 65 to 95 nm inclusive when 10 nm, from 65 to 90 nm inclusive when 15 nm, from 60 to 85 nm inclusive when 20 nm, from 55 to 70 nm inclusive when 25 nm, and from 55 to 65 nm inclusive when 30 nm.
摘要翻译： 一种包括中间接触层的光伏器件，其反射特性已经被优化。 该光电器件（100）包括设置在衬底（1）上并且在与衬底（1）相对的表面上具有纹理结构的透明电极层（2），由两个电力 （91,92），背电极层（4）和设置在两个发电层（91,92）之间的中间接触层（5），其中中间接触层（5）包括氧化钛 所述氧化钛膜主要包含氧化钛和主要包含透明导电氧化物的背面透明导电膜，所述氧化钛膜布置在更接近所述衬底（1）的位置，并且所述氧化钛膜的厚度是落入被定义为 当背面透明导电膜的厚度为5nm时为65至110nm，并且类似地，当为10nm时为65至95nm，当15nm时为65至90nm，包括60至85nm， nm，fr 在25nm时为55〜70nm，在30nm时为55〜65nm。
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公开(公告)号：EP2190028A1
公开(公告)日：2010-05-26
申请号：EP09725180.5
申请日：2009-01-07
发明人： SAKAI, Satoshi , ASAHARA, Yuji , KOBAYASHI, Yasuyuki , MORI, Masafumi , TSURUGA, Shigenori , YAMASHITA, Nobuki
IPC分类号： H01L31/04
CPC分类号： H01L31/022466 , H01L21/02554 , H01L21/02573 , H01L21/02631 , H01L31/022483 , H01L31/0236 , H01L31/02366 , H01L31/0547 , H01L31/0687 , H01L31/1884 , Y02E10/52 , Y02E10/544
摘要： The short-circuit current of a photovoltaic device is improved by optimizing the transparent conductive layer. A photovoltaic device 100 comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 on a substrate 1, wherein the film thickness of the second transparent electrode layer 6 is not less than 80 nm and not more than 100 nm, and the light absorptance for the second transparent electrode layer 6 in a wavelength region from not less than 600 nm to not more than 1,000 nm is not more than 1.5%. Also, a photovoltaic device 100 wherein the film thickness of the second transparent electrode layer 6 is not less than 80 nm and not more than 100 nm, and the reflectance for light reflected at the second transparent electrode layer 6 and the back electrode layer 4 is not less than 91% in the wavelength region from not less than 600 nm to not more than 1,000 nm.
摘要翻译： 通过优化透明导电层来改善光伏器件的短路电流。 在基板1上具有第一透明电极层2，发电层3，第二透明电极层6和背面电极层4的光电器件100，其中第二透明电极层6的膜厚度不小于 80nm以上且100nm以下，并且在不小于600nm至不大于1000nm的波长区域中的第二透明电极层6的光吸收率不大于1.5％。 此外，第二透明电极层6的膜厚为80nm以上且100nm以下的光电转换装置100，在第二透明电极层6和背面电极层4反射的光的反射率为 在不小于600nm至不大于1000nm的波长区域中不小于91％。
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4.发明公开DEVICE AND METHOD FOR MONITORING WIND TURBINE, AND PROGRAM 审中-公开VORRICHTUNG VERFAHREN ZURÜBERWACHUNGEINER WINDTURBINE UND PROGRAMM
公开(公告)号：EP2474734A1
公开(公告)日：2012-07-11
申请号：EP09805894.4
申请日：2009-08-31
IPC分类号： F03D7/04
CPC分类号： G05B23/024 , F03D17/00 , F05B2270/80 , F05B2270/803
摘要： Status monitoring of a wind turbine is automatically performed, and evaluation of that status is quantitatively performed according to an appropriate criterion. Provided is a wind turbine monitoring device including a first storage unit (2) in which a diagnostic data file is stored; a second storage unit (28) in which a normal data file is stored; a diagnostics setting unit (29) that that extracts and sets a plurality of datasets to be used in diagnosis from the first storage unit and that extracts and sets a plurality of datasets to be used in diagnosis from the second storage unit; an index-value calculating unit (30) that calculates status index values representing the status of the wind turbine using a statistical calculation method, on the basis of the set datasets in the diagnostic data file and the datasets in the reference data file; a fault determining unit that evaluates the status of the wind turbine on the basis of the status index values; and a notification unit (32) that notifies the result of this evaluation.
摘要翻译： 自动执行风力涡轮机的状态监视，并根据适当的标准定量地执行该状态的评估。 提供一种风力涡轮机监视装置，包括：第一存储单元（2），存储有诊断数据文件; 存储正常数据文件的第二存储单元（28）; 诊断设置单元，其从所述第一存储单元提取并设置要用于诊断的多个数据集，并从所述第二存储单元提取并设置要用于诊断的多个数据集; 基于诊断数据文件中的设定数据集和参考数据文件中的数据集，使用统计计算方法计算表示风力涡轮机的状态的状态指标值的指标值计算单元（30） 故障确定单元，其基于所述状态指标值来评估所述风力涡轮机的状态; 以及通知该评价结果的通知单元（32）。
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公开(公告)号：EP2355165A1
公开(公告)日：2011-08-10
申请号：EP09830225.0
申请日：2009-01-07
IPC分类号： H01L31/04
CPC分类号： H01L31/1812 , H01L31/046 , H01L31/076 , Y02E10/548
摘要： A film thickness configuration for a triple-junction photovoltaic device that is suitable for obtaining high conversion efficiency. The photovoltaic device (100) comprises, on top of a substrate (1), a transparent electrode layer (2), a photovoltaic layer (3) containing three stacked cell layers (91, 92, 93) having pin junctions, and a back electrode layer (4), wherein an incident section cell layer (91) provided on the light-incident side has an amorphous silicon i-layer having a thickness of not less than 100 nm and not more than 200 nm, a bottom section cell layer (93) provided on the opposite side from the light-incident side has a crystalline silicon-germanium i-layer having a thickness of not less than 700 nm and not more than 1,600 nm, and the ratio of germanium atoms relative to the sum of germanium atoms and silicon atoms within the crystalline silicon-germanium i-layer is not less than 15 atomic% and not more than 25 atomic%, and a middle section cell layer (92) provided between the incident section cell layer (91) and the bottom section cell layer (93) has a crystalline silicon i-layer having a thickness of not less than 1,000 nm and not more than 2,000 nm.
摘要翻译： 适用于获得高转换效率的三结光电器件的膜厚结构。 光电器件（100）在基板（1）的顶部上包括透明电极层（2），包含三个具有引脚接点的堆叠单元层（91,92,93）的光电转换层（3） 电极层（4），其中设置在所述光入射侧的入射截面电池层（91）具有厚度不小于100nm且不大于200nm的非晶硅i层，底部电池层 设置在与光入射侧相反的一侧的（93）具有厚度不小于700nm且不大于1,600nm的晶体硅 - 锗i层，并且锗原子相对于 结晶硅 - 锗i层内的锗原子和硅原子不小于15原子％且不超过25原子％，并且设置在入射部分单元层（91）和 底部电池层（93）具有厚度的晶体硅i层 不小于1000nm且不大于2,000nm。
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公开(公告)号：EP2190029A1
公开(公告)日：2010-05-26
申请号：EP09726325.5
申请日：2009-01-09
发明人： SAKAI, Satoshi , ASAHARA, Yuji , KOBAYASHI, Yasuyuki , MORI, Masafumi , TSURUGA, Shigenori , YAMASHITA, Nobuki
IPC分类号： H01L31/04
CPC分类号： H01L31/1884 , H01L31/022425 , H01L31/0236 , H01L31/02366 , H01L31/046 , H01L31/0463 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： A photovoltaic device that exhibits improved light absorption properties for the electric power generation layer and a process for producing such a photovoltaic device are provided by optimizing the surface shape of the back surface structure. A photovoltaic device 100 comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, and the surface of the second transparent electrode layer 6 on the surface of the back electrode layer 4 has a fine uneven texture, for which the surface area magnification ratio relative to the projected surface area is not less than 10% and not more than 32%. Also, a photovoltaic device comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, the back electrode layer-side surface of the second transparent electrode layer 6 has a fine uneven texture, and the second transparent electrode layer 6 comprises needle-like crystals.
摘要翻译： 通过优化背面结构的表面形状来提供对发电层表现出改善的光吸收性能的光伏器件和用于制造这种光伏器件的方法。 一种光电器件100，其包括依次设置在基板1上的第一透明电极层2，发电层3，第二透明电极层6和背电极层4，其中背电极层4包括银薄膜 ，并且背电极层4的表面上的第二透明电极层6的表面具有细微的不均匀纹理，对于该表面区域放大率相对于投影表面积不小于10％且不大于32 ％。 另外，在基板1上依次设置有第一透明电极层2，发电层3，第二透明电极层6以及背面电极层4的光电转换装置，背面电极层4由 银的情况下，第二透明电极层6的背面电极层侧表面具有微细的凹凸纹理，第二透明电极层6包含针状晶体。
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公开(公告)号：EP1231009B1
公开(公告)日：2006-05-17
申请号：EP01128735.6
申请日：1997-09-23
IPC分类号： B23K9/073
CPC分类号： B23K9/08 , B23K9/0737
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公开(公告)号：EP2403002A1
公开(公告)日：2012-01-04
申请号：EP09840822.2
申请日：2009-08-11
IPC分类号： H01L31/0236 , H01L31/0224 , H01L31/075
CPC分类号： H01L31/1884 , H01L31/02168 , H01L31/022466 , H01L31/022483 , H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device in which, by optimizing the structures for a substrate-side transparent electrode layer, an intermediate layer, and a back electrode layer, the extracted electrical current can be increased. The photovoltaic device (100) includes at least a transparent electrode layer (2), a photovoltaic layer (3) and a back electrode layer (4) provided on a substrate (1), wherein the surface of the transparent electrode layer (2) on which the photovoltaic layer (3) is disposed includes a textured structure composed of ridges (2a) and a fine micro-texture (2b) provided on the surface of the ridges (2a), the pitch of the textured structure is not less than 1.2 µm and not more than 1.6 µm, the height of the ridges (2a) is not less than 0.2 µm and not more than 0.8 µm, the pitch between peaks in the fine micro-texture (2b) is not less than 0.05 µm and not more than 0.14 µm, and the height of peaks is not less than 0.02 µm and not more than 0.1 µm.
摘要翻译： 通过优化基板侧透明电极层，中间层和背面电极层的结构，能够提高提取的电流的光电转换装置。 光电器件100至少包括设置在基板1上的透明电极层2，光电转换层3和背面电极层4，其中透明电极层2的表面， 其上设置有光电转换层（3）的纹理结构包括由脊（2a）和设置在脊（2a）的表面上的细微微纹理（2b）构成的纹理结构，纹理结构的间距不小于 1.2μm且不大于1.6μm，脊（2a）的高度不小于0.2μm且不大于0.8μm，微细微纹理（2b）中的峰之间的间距不小于0.05μm，并且 不大于0.14μm，峰高不小于0.02μm且不大于0.1μm。
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公开(公告)号：EP2402711A1
公开(公告)日：2012-01-04
申请号：EP09840819.8
申请日：2009-07-02
IPC分类号： G01B11/06 , H01L21/205
CPC分类号： G01B11/0625
摘要： A thin-film inspection apparatus includes a storage section (14) that stores at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum that are affected by a variation in the film thickness of at least one of a first transparent thin film and a second transparent thin film are each associated with the film thickness of the first transparent thin film and the film thickness of the second transparent thin film; a light irradiation section (11) that irradiates an inspection-target substrate (S) with white light through a transparent glass substrate; a light receiving section (12) that receives reflected light reflected from the inspection-target substrate (S); and an arithmetic section (15) that obtains measurement values of the feature values stored in the storage section (14) from a spectral reflectance spectrum generated based on the received reflected light and that calculates the film thickness of each of the first transparent thin film and the second transparent thin film by using the obtained measurement values of the feature values and the feature-value characteristics stored in the storage section (14).
摘要翻译： 本发明提供一种薄膜检查装置，其特征在于，具备：存储部（14），其存储至少两个特征量特征，在该特征量特征中，从光谱反射率谱中的特征量中选择的至少两个特征值受到膜厚度变化 第一透明薄膜和第二透明薄膜中的至少一个分别与第一透明薄膜的薄膜厚度和第二透明薄膜的薄膜厚度相关联; 光照射部（11），其通过透明的玻璃基板对被检查基板（S）照射白色光; 受光部（12），其接收从被检查基板（S）反射的反射光; 以及运算部（15），其根据基于接收到的反射光生成的分光反射光谱，求出存储在存储部（14）中的特征量的测量值，并计算出各第一透明薄膜的膜厚，以及 通过使用获得的存储部分（14）中存储的特征值和特征值特征的测量值来确定第二透明薄膜。
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10.发明公开
公开(公告)号：EP2261637A1
公开(公告)日：2010-12-15
申请号：EP09806613.7
申请日：2009-07-02
CPC分类号： G01N21/9501 , G01N21/3563 , G01N21/55 , G01N21/8422 , G01R31/2831 , H01L31/1884 , Y10T29/53126
摘要： An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner. Provided is a resistivity testing device that includes a light emitting device (3) that emits p-polarized emission light having a wavelength selected by a preliminarily performed test-condition selecting method toward a transparent conductive film, formed on a light-transmissive substrate conveyed along a manufacturing line, from a film-surface side at an incidence angle selected by the method; a light detecting device (2) that detects reflected light reflected at the transparent conductive film; and an information processor (7) that calculates an evaluation value related to the amount of light of the reflected light with respect to the wavelength on the basis of the intensity of the detected light and obtains a resistivity from the calculated evaluation value by using a correlation characteristic in which the evaluation value and the resistivity are associated with each other in advance.
摘要翻译： 目的是以非破坏性和非接触的方式高精度地有效地测量透明导电膜的电阻率。 提供了一种电阻率测试装置，其包括发射具有通过预先进行的测试条件选择方法选择的波长的p偏振发射光朝向透明导电膜形成在所传输的透光基底上的发光器件（3） 以该方法选择的入射角从膜表面侧制造生产线; 光检测装置（2），其检测在所述透明导电膜上反射的反射光; 以及信息处理器（7），其基于所检测的光的强度来计算与所述波长相关的反射光的光量的评估值，并且通过使用相关性从所计算的评估值获得电阻率 评价值和电阻率预先相互关联的特性。
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