公开(公告)号：EP2192620A1

公开(公告)日：2010-06-02

申请号：EP07807455.6

申请日：2007-09-18

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： YAMASHITA, Nobuki ,  WATANABE, Toshiya ,  SAKAI, Satoshi ,  NAKANO, Youji

IPC分类号： H01L31/042 ,  C23C14/08 ,  H01B5/14 ,  H01B13/00

CPC分类号： H01L31/1884 ,  C23C14/0036 ,  C23C14/086 ,  H01L31/022483 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： An object of the present invention is to provide a photovoltaic device and a process for producing such a photovoltaic device that enable a stable, high photovoltaic conversion efficiency to be achieved by using a transparent electrode having an optimal relationship between the resistivity and the transmittance. At least one transparent electrode (12, 16) is either a ZnO layer containing no Ga or a Ga-doped ZnO layer in which the quantity of added Ga is not more than 5 atomic % relative to the Zn within the ZnO layer, and the ZnO layer is formed by a sputtering method using a rare gas containing added oxygen as the sputtering gas, wherein the quantity of oxygen added to the sputtering gas is not less than 0.1% by volume and not more than 5% by volume relative to the combined volume of the oxygen and the rare gas.

摘要翻译： 本发明的目的是提供一种用于制造这种光电器件的光伏器件和方法，其通过使用具有电阻率和透射率之间的最佳关系的透明电极来实现稳定的高光电转换效率。 至少一个透明电极（12,16）是不含Ga的ZnO层或Ga掺杂的ZnO层，其中添加的Ga的量相对于ZnO层内的Zn不超过5原子％，并且 通过使用含有添加氧的稀有气体作为溅射气体的溅射法形成ZnO层，其中，相对于组合物，添加到溅射气体中的氧的量不小于0.1体积％且不大于5体积％ 体积的氧气和稀有气体。

公开(公告)号：EP2190028A1

公开(公告)日：2010-05-26

申请号：EP09725180.5

申请日：2009-01-07

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： SAKAI, Satoshi ,  ASAHARA, Yuji ,  KOBAYASHI, Yasuyuki ,  MORI, Masafumi ,  TSURUGA, Shigenori ,  YAMASHITA, Nobuki

IPC分类号： H01L31/04

CPC分类号： H01L31/022466 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L31/022483 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/0547 ,  H01L31/0687 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/544

摘要： The short-circuit current of a photovoltaic device is improved by optimizing the transparent conductive layer. A photovoltaic device 100 comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 on a substrate 1, wherein the film thickness of the second transparent electrode layer 6 is not less than 80 nm and not more than 100 nm, and the light absorptance for the second transparent electrode layer 6 in a wavelength region from not less than 600 nm to not more than 1,000 nm is not more than 1.5%. Also, a photovoltaic device 100 wherein the film thickness of the second transparent electrode layer 6 is not less than 80 nm and not more than 100 nm, and the reflectance for light reflected at the second transparent electrode layer 6 and the back electrode layer 4 is not less than 91% in the wavelength region from not less than 600 nm to not more than 1,000 nm.

摘要翻译： 通过优化透明导电层来改善光伏器件的短路电流。 在基板1上具有第一透明电极层2，发电层3，第二透明电极层6和背面电极层4的光电器件100，其中第二透明电极层6的膜厚度不小于 80nm以上且100nm以下，并且在不小于600nm至不大于1000nm的波长区域中的第二透明电极层6的光吸收率不大于1.5％。 此外，第二透明电极层6的膜厚为80nm以上且100nm以下的光电转换装置100，在第二透明电极层6和背面电极层4反射的光的反射率为 在不小于600nm至不大于1000nm的波长区域中不小于91％。

公开(公告)号：EP2477233A1

公开(公告)日：2012-07-18

申请号：EP10815196.0

申请日：2010-06-23

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： YAMAGUCHI, Kengo ,  YAMASHITA, Nobuki

IPC分类号： H01L31/075 ,  H01L31/0224 ,  C23C14/08

CPC分类号： C23C14/086 ,  C23C14/0036 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50

摘要： A process for producing a photovoltaic device having high photovoltaic conversion efficiency by suppressing light absorption in the visible light short wavelength region. The process for producing a photovoltaic device (100) comprises a step of forming a substrate-side transparent electrode layer (2) on a substrate (1), a step of forming an intermediate contact layer (5) between two adjacent cell layers (91, 92), and a step of forming a backside transparent electrode layer (6) on a photovoltaic layer (3), wherein a transparent conductive film comprising mainly Ga-doped ZnO is deposited as the substrate-side transparent electrode layer (2), the intermediate contact layer (5) or the backside transparent electrode layer (6), under conditions in which the N 2 gas partial pressure is controlled so that the ratio of N 2 gas partial pressure relative to inert gas partial pressure per unit thickness of the transparent conductive film is not more than a predetermined value.

摘要翻译： 通过抑制可见光短波长区域中的光吸收来制造具有高光电转换效率的光电器件的方法。 制造光电器件（100）的方法包括在基板（1）上形成基板侧透明电极层（2）的步骤，在两个相邻单元层（91）之间形成中间接触层（5）的步骤 ，92），以及在光电转换层（3）上形成背面透明电极层（6）的步骤，其中沉积了主要包含Ga的ZnO的透明导电膜作为衬底侧透明电极层（2）， 中间接触层（5）或背面透明电极层（6），在N 2气体分压被控制使得N 2气体分压相对于每单位厚度的惰性气体分压的比例 透明导电膜不大于预定值。

公开(公告)号：EP2315258A1

公开(公告)日：2011-04-27

申请号：EP08877746.1

申请日：2008-10-30

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： MASHIMA, Hiroshi ,  ASAKUSA, Koichi ,  TAKANO, Akemi ,  YAMASHITA, Nobuki ,  TAKEUCHI, Yoshiaki

IPC分类号： H01L31/04

CPC分类号： H01L31/075 ,  H01L31/03762 ,  H01L31/0463 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.

摘要翻译： 一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现所需的结晶比。 制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成 在i型非晶硅层上沉积n型非晶硅层的步骤，其中n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤， 以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件 层形成步骤，用于沉积到相同的基材基材上。

公开(公告)号：EP2190029A1

公开(公告)日：2010-05-26

申请号：EP09726325.5

申请日：2009-01-09

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： SAKAI, Satoshi ,  ASAHARA, Yuji ,  KOBAYASHI, Yasuyuki ,  MORI, Masafumi ,  TSURUGA, Shigenori ,  YAMASHITA, Nobuki

IPC分类号： H01L31/04

CPC分类号： H01L31/1884 ,  H01L31/022425 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/056 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： A photovoltaic device that exhibits improved light absorption properties for the electric power generation layer and a process for producing such a photovoltaic device are provided by optimizing the surface shape of the back surface structure. A photovoltaic device 100 comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, and the surface of the second transparent electrode layer 6 on the surface of the back electrode layer 4 has a fine uneven texture, for which the surface area magnification ratio relative to the projected surface area is not less than 10% and not more than 32%. Also, a photovoltaic device comprising a first transparent electrode layer 2, an electric power generation layer 3, a second transparent electrode layer 6 and a back electrode layer 4 provided sequentially on a substrate 1, wherein the back electrode layer 4 comprises a thin film of silver, the back electrode layer-side surface of the second transparent electrode layer 6 has a fine uneven texture, and the second transparent electrode layer 6 comprises needle-like crystals.

摘要翻译： 通过优化背面结构的表面形状来提供对发电层表现出改善的光吸收性能的光伏器件和用于制造这种光伏器件的方法。 一种光电器件100，其包括依次设置在基板1上的第一透明电极层2，发电层3，第二透明电极层6和背电极层4，其中背电极层4包括银薄膜 ，并且背电极层4的表面上的第二透明电极层6的表面具有细微的不均匀纹理，对于该表面区域放大率相对于投影表面积不小于10％且不大于32 ％。 另外，在基板1上依次设置有第一透明电极层2，发电层3，第二透明电极层6以及背面电极层4的光电转换装置，背面电极层4由 银的情况下，第二透明电极层6的背面电极层侧表面具有微细的凹凸纹理，第二透明电极层6包含针状晶体。