公开(公告)号：EP2315258A1

公开(公告)日：2011-04-27

申请号：EP08877746.1

申请日：2008-10-30

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： MASHIMA, Hiroshi ,  ASAKUSA, Koichi ,  TAKANO, Akemi ,  YAMASHITA, Nobuki ,  TAKEUCHI, Yoshiaki

IPC分类号： H01L31/04

CPC分类号： H01L31/075 ,  H01L31/03762 ,  H01L31/0463 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.

摘要翻译： 一种制造光电器件的方法，其中当在i型非晶硅层上提供n型非晶硅层时，可以在不降低沉积速率的情况下实现所需的结晶比。 制造方法包括沉积p型非晶硅层的p层形成步骤，在p型非晶硅层上沉积i型非晶硅层的i层形成步骤和n层形成 在i型非晶硅层上沉积n型非晶硅层的步骤，其中n层形成步骤包括在i型非晶硅层上沉积第一n层的第一n层形成步骤， 以及在第一n层上沉积第二n层的第二n层形成步骤，并且用于第一n层形成步骤的沉积条件是产生比第二n层的沉积条件更高的结晶比的条件 层形成步骤，用于沉积到相同的基材基材上。

公开(公告)号：EP2287920A1

公开(公告)日：2011-02-23

申请号：EP08877745.3

申请日：2008-10-30

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： NISHIMIYA, Tatsuyuki ,  MASHIMA, Hiroshi ,  MIYAHARA, Hiroomi ,  KAWAMURA, Keisuke ,  NAKANO, Youji

IPC分类号： H01L31/04

CPC分类号： H01L31/075 ,  C23C16/24 ,  C23C16/509 ,  H01L31/028 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion apparatus (100) having a photovoltaic layer (3) comprising a crystalline silicon i-layer (42) formed on a large surface area substrate (1) of not less than 1 m 2 , wherein the crystalline silicon i-layer comprises regions in which the Raman peak ratio, which is the ratio, within the substrate (1) plane, of the Raman peak intensity of the crystalline silicon phase relative to the Raman peak intensity of the amorphous silicon phase, is within a range from not less then 3.5 to not more than 8.0, and the surface area proportion for those regions within the substrate (1) plane having a Raman peak ratio of not more than 2.5 is not more than 3%. In this manner, by adjusting the crystallinity of the crystalline silicon i layer to a crystallinity that yields a high output but is prior to the occurrence of high-brightness reflective regions, thereby restricting the surface area proportion of the high-brightness reflective regions, a photovoltaic device that exhibits a high output can be realized.

摘要翻译： 具有（3），其包括结晶硅的光电转换层的光电转换装置（100）i层（42）形成的大面积基板（1）的不小于1米2，worin所述雏晶硅i层包含上 区，其中的拉曼峰值比，所有这是比，基板（1）内面，晶体硅相对于非晶硅相的拉曼峰值强度相的拉曼峰值强度，是从以下的范围内 然后3.5至不大于8.0，和基片内，用于这些区域的面积比例（1）具有不超过2.5以上的拉曼峰值比平面不超过3％。 以这种方式，通过调整雏晶硅i层的结晶性的结晶度没有产生高输出，但先于高亮度反射区域的发生，从而限制了高亮度反射区域的面积比例，一 光伏器件确实具有高的输出，可以实现。

公开(公告)号：EP2200092A1

公开(公告)日：2010-06-23

申请号：EP09724876.9

申请日：2009-01-07

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： GOYA, Saneyuki ,  SASAKAWA, Eishiro ,  MASHIMA, Hiroshi ,  SAKAI, Satoshi

IPC分类号： H01L31/04

CPC分类号： H01L31/0236 ,  H01L31/02366 ,  H01L31/077 ,  H01L31/18 ,  Y02E10/50

摘要： A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%. Also, a photovoltaic device 100 in which the size of the surface of the substrate 1 on which the photovoltaic layer 3 is formed is at least 1 m square, and in which the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio that is not less than 5 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 10%.

摘要翻译： 提供了具有高转换效率和优异的批量生产率的大表面积光伏器件。 具有形成在基板1上的结晶硅层的光电转换层3的光电转换装置100，其中晶体硅层具有晶体硅i层42，晶体硅i层42具有基板面内分布。 表示拉曼峰值比的平均值，其表示晶体硅相的拉曼峰强度相对于非晶硅相的拉曼峰强度的比，不小于4并且不大于8，标准 不小于1且不大于3的拉曼峰值比的偏差，拉曼峰比不大于4的区域的比例不小于0％且不大于15％。 此外，其上形成有光电转换层3的基板1的表面的尺寸至少为1μm的光电器件100，其中晶体硅i层42具有基板的平面内分布 通过不小于5且不大于8的拉曼峰值比的平均值，拉曼峰值比的标准偏差不小于1且不大于3，以及拉曼的拉曼峰比 峰值比不大于4，不小于0％且不大于10％。

公开(公告)号：EP2113937A1

公开(公告)日：2009-11-04

申请号：EP08711501.0

申请日：2008-02-18

申请人： Mitsubishi Heavy Industries, Ltd.

发明人： KAWAMURA, Keisuke ,  MASHIMA, Hiroshi

IPC分类号： H01L21/205

CPC分类号： C23C16/509 ,  C23C16/24 ,  H01J37/32091 ,  H01J37/32183 ,  H01L21/02532 ,  H01L21/0262

摘要： A vacuum processing apparatus is provided, in which a deposition characteristic is easily adjusted, and occurrence of difference in deposition characteristic between deposition chambers can be suppressed, and reduction in equipment cost can be achieved, and a deposition method using the vacuum processing apparatus is provided. The vacuum processing apparatus is characterized by having a plurality of discharge electrodes (3a to 3h) that are supplied with high-frequency power from a power supply unit (17a) through both ends (53) thereof, and form plasma with respect to a substrate (8) respectively, and a plurality of matching boxes (3a to 3ht) which tune phases and amplitudes of the high-frequency power supplied to the plurality of discharge electrodes (3a to 3h) at the ends (53) respectively; wherein impedance of the plurality of matching boxes (3a to 3ht) are set to approximately the same value, and the impedance value is a value at which reflected power is approximately minimized, the reflected power being returned to the power supply unit (17a) from one discharge electrode among the plurality of discharge electrodes (3a to 3h).

摘要翻译： 提供了一种真空处理装置，其中易于调节沉积特性，并且可以抑制沉积室之间的沉积特性的差异的发生，并且可以实现设备成本的降低，并且提供使用真空处理装置的沉积方法 。 该真空处理装置的特征在于，具有从供电单元（17a）经过其两端（53）供给高频电力的多个放电电极（3a〜3h），并相对于基板形成等离子体 （8），以及多个匹配箱（3a〜3ht），分别调整在端部（53）处提供给多个放电电极（3a〜3h）的高频电力的相位和振幅; 其中所述多个匹配箱（3a至3ht）的阻抗被设置为大致相同的值，并且所述阻抗值是反射功率近似最小化的值，所述反射功率从所述反馈功率返回到所述电源单元 多个放电电极（3a〜3h）中的一个放电电极。