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公开(公告)号：EP1475457A8
公开(公告)日：2005-02-23
申请号：EP04017496.3
申请日：2002-10-28
发明人： Sakamoto, Hitoshi, c/o Mitsubishi Heavy Ind., Ltd. , Yahata, Naoki, c/o Mitsubishi Heavy Ind., Ltd. , Matsuda, Ryuichi, c/o Mitsubishi Heavy Ind., Ltd. , Ooba, Yoshiyuki, c/o Mitsubishi Heavy Ind., Ltd. , Nishimori, Toshihiko, Mitsubishi Heavy Ind., Ltd.
CPC分类号： H01L21/7685 , C23C8/36 , C23C16/14 , C23C16/34 , C23C16/40 , C23C16/4488 , C23C16/452 , C23C16/507 , C23C16/56 , C23F4/00 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L21/76888 , H01L2221/1078
摘要： A barrier metal film production method comprising: supplying a source gas containing a halogen to an interior of a chamber between a substrate and a metallic etched member; converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; exciting a nitrogen-containing gas in a manner isolated from the chamber accommodating the substrate; forming a metal nitride upon reaction between excited nitrogen and the precursor; and making a temperature of the substrate lower than a temperature of means for formation of the metal nitride to form the metal nitride as a film on the substrate.
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公开(公告)号：EP1475454A8
公开(公告)日：2005-02-23
申请号：EP04017493.0
申请日：2002-10-28
发明人： Sakamoto, Hitoshi, c/o Mitsubishi Heavy Ind., Ltd. , Yahata, Naoki, c/o Mitsubishi Heavy Ind., Ltd. , Matsuda, Ryuichi, c/o Mitsubishi Heavy Ind., Ltd. , Ooba, Yoshiyuki, c/o Mitsubishi Heavy Ind., Ltd. , Nishimori, Toshihiko, Mitsubishi Heavy Ind., Ltd.
CPC分类号： H01L21/7685 , C23C8/36 , C23C16/14 , C23C16/34 , C23C16/40 , C23C16/4488 , C23C16/452 , C23C16/507 , C23C16/56 , C23F4/00 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L21/76888 , H01L2221/1078
摘要： A metal film production apparatus, comprising: a chamber accommodating a substrate; a metallic etched member provided in the chamber at a position opposed to the substrate; halogen gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member; barrier plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; excitation means for exciting a gas containing nitrogen in a manner isolated from the chamber; formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor; control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate for use as a barrier metal film; diluent gas supply means for supplying a diluent gas to a site above a surface of the substrate; and surface treatment plasma generation means which converts the atmosphere within the chamber into a plasma to generate a diluent gas plasma so that the barrier metal film on the surface of the substrate is etched with the diluent gas plasma to flatten the barrier metal film.
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3.发明公开Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus 审中-公开装置和方法用于生产用于金属，设备和方法的阻挡层的制造的金属层
公开(公告)号：EP1475453A8
公开(公告)日：2005-02-23
申请号：EP04017492.2
申请日：2002-10-28
发明人： Sakamoto, Hitoshi, c/o Mitsubishi Heavy Ind., Ltd. , Yahata, Naoki c/o Mitsubishi Heavy Ind., Ltd. , Matsuda, Ryuichi, c/o Mitsubishi Heavy Ind., Ltd. , Ooba, Yoshiyuki, c/o Mitsubishi Heavy Ind., Ltd. , Nishimori, Toshihiko, Mitsubishi Heavy Ind., Ltd.
CPC分类号： H01L21/7685 , C23C8/36 , C23C16/14 , C23C16/34 , C23C16/40 , C23C16/4488 , C23C16/452 , C23C16/507 , C23C16/56 , C23F4/00 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L21/76888 , H01L2221/1078
摘要： A metal film production apparatus, comprising: a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon; diluent gas supply means for supplying a diluent gas to an interior of the chamber above a surface of the substrate; surface treatment plasma generation means which converts an atmosphere within the chamber into a plasma to generate a diluent gas plasma so that the barrier metal film on the surface of the substrate is etched with the diluent gas plasma to flatten the barrier metal film; a metallic etched member provided in the chamber; source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member; plasma generation means which converts the source gas containing the halogen into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; and control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the flattened barrier metal film.
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4.发明公开Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus 有权金属阻挡膜制造装置，金属阻挡膜制造方法，金属膜制造方法以及金属膜制造装置
公开(公告)号：EP1473379A8
公开(公告)日：2005-02-23
申请号：EP04017491.4
申请日：2002-10-28
发明人： Sakamoto, Hitoshi, c/o Mitsubishi Heavy Ind., Ltd. , Yahata, Naoki, c/o Mitsubishi Heavy Ind., Ltd. , Matsuda, Ryuichi, c/o Mitsubishi Heavy Ind., Ltd. , Ooba, Yoshiyuki, c/o Mitsubishi Heavy Ind., Ltd. , Nishimori, Toshihiko, Mitsubishi Heavy Ind., Ltd.
CPC分类号： H01L21/7685 , C23C8/36 , C23C16/14 , C23C16/34 , C23C16/40 , C23C16/4488 , C23C16/452 , C23C16/507 , C23C16/56 , C23F4/00 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L21/76888 , H01L2221/1078
摘要： A metal film production apparatus, comprising: a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon; silicon-containing gas supply means for supplying a gas containing silicon to a site above a surface of the substrate; surface treatment plasma generation means which generates a gas plasma containing silicon to form nuclei of silicon atoms on a surface of the barrier metal film on the surface of the substrate; a metallic etched member provided in the chamber; source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member; plasma generation means which converts the source gas containing the halogen into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; and control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the barrier metal film having the nuclei of silicon atoms formed on the surface thereof.
摘要翻译： 1。一种金属膜制造装置，其特征在于，具备：收容形成有金属氮化物的阻挡金属膜的基板的腔室; 含硅气体供给装置，用于向衬底表面上方的位置供应含硅气体; 表面处理等离子体产生装置，其产生含硅的气体等离子体，以在衬底表面上的阻挡金属膜的表面上形成硅原子的核; 设置在腔室内的金属蚀刻部件; 源气体供应装置，用于将含卤素的源气体供应到基板和蚀刻构件之间的室的内部; 等离子体产生装置，其将包含卤素的源气体转换为等离子体以产生源气体等离子体，使得利用源气体等离子体蚀刻蚀刻构件以由蚀刻构件中包含的金属成分和源气体形成前体; 以及控制装置，其使基板的温度低于被蚀刻构件的温度，从而在具有在其表面上形成的硅原子的核的阻挡金属膜上形成膜前体的金属组分作为膜。
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5.发明公开Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus 审中-公开金属阻挡膜制造装置，金属阻挡膜制造方法，金属膜制造方法以及金属膜制造装置
公开(公告)号：EP1475455A8
公开(公告)日：2005-02-23
申请号：EP04017494.8
申请日：2002-10-28
发明人： Sakamoto, Hitoshi, c/o Mitsubishi Heavy Ind., Ltd. , Yahata, Naoki, c/o Mitsubishi Heavy Ind., Ltd. , Matsuda, Ryuichi, c/o Mitsubishi Heavy Ind., Ltd. , Ooba, Yoshiyuki, c/o Mitsubishi Heavy Ind., Ltd. , Nishimori, Toshihiko, Mitsubishi Heavy Ind., Ltd.
CPC分类号： H01L21/7685 , C23C8/36 , C23C16/14 , C23C16/34 , C23C16/40 , C23C16/4488 , C23C16/452 , C23C16/507 , C23C16/56 , C23F4/00 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L21/76888 , H01L2221/1078
摘要： A barrier metal film production apparatus, comprising: a chamber accommodating a substrate; a metallic etched member provided in the chamber at a position opposed to the substrate; source gas supply means for supplying a source gas containing a halogen into the chamber; plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; excitation means for exciting a gas containing nitrogen in a manner isolated from the chamber; formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor; control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate for use as a barrier metal film; oxygen gas supply means for supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and oxygen plasma generation means which converts the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.
摘要翻译： 1。一种阻挡金属膜制造装置，其特征在于，具备：容纳基板的腔室 设置在腔室中与基板相对的位置上的金属蚀刻部件; 用于将含有卤素的源气体供应到所述室中的源气体供应装置; 等离子体产生装置，其将所述腔室内的气氛转换为等离子体以产生源气体等离子体，以使得利用所述源气体等离子体蚀刻所述蚀刻构件，以由所述蚀刻构件中所含的金属组分和所述源气体形成前体; 激励装置，用于以与腔室隔离的方式激励含氮气体; 形成装置，用于在由所述激发装置激发的氮与所述前体之间的反应时形成金属氮化物; 控制装置，其使基板的温度低于形成装置的温度，以在基板上形成金属氮化物作为膜以用作阻挡金属膜; 氧气供应装置，用于在即将形成阻挡金属膜的最表层之前将氧气供应到室中; 和氧等离子体产生装置，其将腔室内的气氛转换为等离子体以产生氧气等离子体，从而在阻挡金属膜的最表层上形成氧化物层。
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6.发明公开Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus 审中-公开装置和方法用于生产用于金属，设备和方法的阻挡层的制造的金属层
公开(公告)号：EP1312696A3
公开(公告)日：2004-01-07
申请号：EP02024416.6
申请日：2002-10-28
发明人： Sakamoto, Hitoshi, Mitsubishi Heavy Ind., Ltd. , Yahata, Naoki, Mitsubishi Heavy Ind., Ltd. , Matsuda, Ryuichi, Mitsubishi Heavy Ind., Ltd. , Ooba, Yoshiyuki, Mitsubishi Heavy Ind., Ltd. , Nishimori, Toshihiko, Mitsubishi Heavy Ind., Ltd.
CPC分类号： H01L21/7685 , C23C8/36 , C23C16/14 , C23C16/34 , C23C16/40 , C23C16/4488 , C23C16/452 , C23C16/507 , C23C16/56 , C23F4/00 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L21/76888 , H01L2221/1078
摘要： A Cl 2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl 2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved. Surface treatment is performed for decreasing the nitrogen content of the superficial layer of a barrier metal film relative to the interior of the matrix of the barrier metal film. As a result, an oxide layer is formed on the surface to improve wettability, and hydroxyl groups are formed on the surface to increase hydrophilicity. Thus, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with increased adhesion to metal to be formed as a film thereon. In a further method a surface treatment is performed for removing N atoms in a superficial TaN layer of a barrier metal film to decrease the nitrogen content of the superficial layer relative to the interior of the matrix of the barrier metal film. As a result, a metal layer is substantially formed on the superficial layer, and the substantial metal layer and the metal nitride layer are formed with a single-layer thickness. In this manner, a barrier metal film with a very small thickness is produced, with diffusion of metal being prevented and adhesion to the metal being retained, to stabilize a metal wiring process.
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