Heterojunction bipolar transistor with ballistic operation
    2.
    发明公开
    Heterojunction bipolar transistor with ballistic operation 失效
    BipolarerHeteroübergangs-Transistor mit ballistischem Betrieb。

    公开(公告)号:EP0273363A2

    公开(公告)日:1988-07-06

    申请号:EP87119044.3

    申请日:1987-12-22

    申请人: NEC CORPORATION

    CPC分类号: H01L29/7371 H01L29/205

    摘要: For improvement in operation speed, there is provided a heterojunction bipolar transistor comprising, a) an emitter region (27) formed of a first semiconductor material of a first conductivity type, b) a base region (24) formed of a second semiconductor material of a second conductivity type opposite to the first conductivity type and forming a first junction together with the emitter region, and c) a collector region (23) formed of a third semiconductor material of the first conductivity type and forming a second junction together with the base region, the heterojunction bipolar transistor has a plurality of abrupt potential discontinuities including first and second abrupt potential discontinuities produced in succession to provide kinetic energies to a carrier injected from the emitter region, respectively, and the first abrupt potential discontinuity is produced at one of the first and second junctions, thereby allowing the carrier to move over a distance longer than a linear free path of the carrier in the ballistic manner.

    摘要翻译: 为了提高操作速度,提供了一种异质结双极晶体管,它包括a)由第一导电类型的第一半导体材料形成的发射极区域(27),b)由第二半导体材料形成的基极区域 与第一导电类型相反的第二导电类型并与发射极区一起形成第一结,以及c)由第一导电类型的第三半导体材料形成的集电极区(23),并与基底一起形成第二结 区域中,异质结双极晶体管具有多个突变电位不连续性,其包括分别产生的第一和第二突变电位不连续性,以向从发射极区域注入的载流子提供动能,并且第一突变电位不连续性 第一和第二结,从而允许载体移动超过线性自由的距离 航空母舰的弹道方式。