公开(公告)号：EP0109082A2

公开(公告)日：1984-05-23

申请号：EP83111366.7

申请日：1983-11-14

申请人： NEC CORPORATION

发明人： Okabashi, Hidekazu ,  Morimoto, Mitsutaka ,  Nagasawa, Eiji

IPC分类号： H01L21/225 ,  H01L21/285 ,  H01L21/60

CPC分类号： H01L21/768 ,  H01L21/2257 ,  H01L21/76889 ,  Y10S148/019 ,  Y10S148/082 ,  Y10S148/147

摘要： The present invention relates to a method of forming a diffused region with a shallow junction having a refractory metal silicide layer thereon. At first, the refractory metal silicide layer is selectively formed on a silicon substrate of one conductivity type. An insulating film is then formed at least on the refractory metal silicide layer, and a contact hole is opened on a part of the silicide layer. After necessary high temperature treatments have been conducted, a dopant impurity of the opposite conductivity type is introduced from the contact hole to the silicide layer. The impurity is laterally dispersed in the silicide layer and diffused into the whole portion of the silicon substrate in contact with the silicide layer, whereby the diffused region with a shallow junction can be formed.

公开(公告)号：EP0109082B1

公开(公告)日：1990-09-12

申请号：EP83111366.7

申请日：1983-11-14

申请人： NEC CORPORATION

发明人： Okabashi, Hidekazu ,  Morimoto, Mitsutaka ,  Nagasawa, Eiji

IPC分类号： H01L21/225 ,  H01L21/285 ,  H01L21/60

CPC分类号： H01L21/768 ,  H01L21/2257 ,  H01L21/76889 ,  Y10S148/019 ,  Y10S148/082 ,  Y10S148/147

公开(公告)号：EP0109082A3

公开(公告)日：1986-06-25

申请号：EP83111366

申请日：1983-11-14

申请人： NEC CORPORATION

发明人： Okabashi, Hidekazu ,  Morimoto, Mitsutaka ,  Nagasawa, Eiji

IPC分类号： H01L21/225 ,  H01L21/285 ,  H01L21/60

CPC分类号： H01L21/768 ,  H01L21/2257 ,  H01L21/76889 ,  Y10S148/019 ,  Y10S148/082 ,  Y10S148/147

摘要： The present invention relates to a method of forming a diffused region with a shallow junction having a refractory metal silicide layer thereon. At first, the refractory metal silicide layer is selectively formed on a silicon substrate of one conductivity type. An insulating film is then formed at least on the refractory metal silicide layer, and a contact hole is opened on a part of the silicide layer. After necessary high temperature treatments have been conducted, a dopant impurity of the opposite conductivity type is introduced from the contact hole to the silicide layer. The impurity is laterally dispersed in the silicide layer and diffused into the whole portion of the silicon substrate in contact with the silicide layer, whereby the diffused region with a shallow junction can be formed.