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公开(公告)号：EP0541373A3
公开(公告)日：1993-07-28
申请号：EP92310132.3
申请日：1992-11-05
发明人： Nakamura, Shuji, c/o Nichia Chemical Ind. Ltd. , Iwasa, Naruhito, c/o Nichia Chemical Ind. Ltd. , Senoh, Masayuki, c/o Nichia Chemical Ind. Ltd.
IPC分类号： H01L33/00 , H01L21/324
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0087 , Y10S148/003 , Y10S148/004 , Y10S148/064 , Y10S438/902 , Y10S438/909
摘要： A method for manufacturing a III-V Group compound or a II-VI Group compound semiconductor element by VPE, comprising the step of annealing a grown compound at 400°C or higher, or electron beam irradiating the grown compound at 600°C or higher.
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2.发明公开Method of manufacturing p-type compound semiconductor 失效Verfahren zur Herstellung von Verbundhalbleitern des P-Typs。
公开(公告)号：EP0541373A2
公开(公告)日：1993-05-12
申请号：EP92310132.3
申请日：1992-11-05
发明人： Nakamura, Shuji, c/o Nichia Chemical Ind. Ltd. , Iwasa, Naruhito, c/o Nichia Chemical Ind. Ltd. , Senoh, Masayuki, c/o Nichia Chemical Ind. Ltd.
IPC分类号： H01L33/00 , H01L21/324
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0087 , Y10S148/003 , Y10S148/004 , Y10S148/064 , Y10S438/902 , Y10S438/909
摘要： A method for manufacturing a III-V Group compound or a II-VI Group compound semiconductor element by VPE, comprising the step of annealing a grown compound at 400°C or higher, or electron beam irradiating the grown compound at 600°C or higher.
摘要翻译： 一种通过VPE制造III-V族化合物或II-VI族化合物半导体元件的方法，包括在400℃或更高温度下退火生长的化合物的步骤或在600℃或更高温度下照射生长的化合物的电子束 。
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公开(公告)号：EP0541373B1
公开(公告)日：1998-09-30
申请号：EP92310132.3
申请日：1992-11-05
发明人： Nakamura, Shuji, c/o Nichia Chemical Ind. Ltd. , Iwasa, Naruhito, c/o Nichia Chemical Ind. Ltd. , Senoh, Masayuki, c/o Nichia Chemical Ind. Ltd.
IPC分类号： H01L33/00 , H01L21/324
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0087 , Y10S148/003 , Y10S148/004 , Y10S148/064 , Y10S438/902 , Y10S438/909
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