公开(公告)号：EP1720200A4

公开(公告)日：2007-01-31

申请号：EP05719127

申请日：2005-02-15

申请人： NIPPON MINING CO

发明人： SHIMIZU EIICHI ,  MAKINO NOBUHITO ,  KAWABE MANABU

IPC分类号： C30B25/12 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10 ,  H01L21/205

CPC分类号： C30B25/10 ,  C23C16/4583

摘要： Epitaxially growing equipment for epitaxially growing a thin film having excellent uniformity over the entire wafer surface. The epitaxially growing equipment is provided with at least a reactor which can be sealed airtight, a wafer storing means (wafer holder), which is arranged in the reactor and has a wafer placing part (pocket hole) for holding the wafer on the front side, a gas supplying means (gas introducing pipe) for supplying a material gas to the wafer, a heating means (heater) for heating the wafer, and a heat uniformizing means (susceptor), which holds the wafer storing means and uniformizes heat from the heating means. In the reactor of the epitaxially growing equipment, the growing film is formed on the wafer surface by supplying the material gas in a high-temperature status, while heating the wafer by the heating means via the heat uniformizing means and the wafer storing means. On the rear side of the wafer storing means, a part recessed in a dome-shape is formed.

公开(公告)号：EP1533834A4

公开(公告)日：2007-01-17

申请号：EP02807525

申请日：2002-10-16

申请人： NIPPON MINING CO

发明人： SHIMIZU EIICHI ,  MAKINO NOBUHITO

IPC分类号： H01L21/205 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12

CPC分类号： C23C16/46 ,  C30B25/10 ,  C30B25/12 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012 ,  Y10T117/1016

摘要： A vapor phase epitaxial apparatus comprises a sealable reaction furnace, a wafer accommodation body which is installed in the reaction furnace to dispose a wafer at a predetermined position, a gas feeding means for feeding raw gas toward the wafer, and a heating means for heating the wafer. An epitaxial film is formed on a surface of the wafer by feeding the raw gas into the reaction furnace in a high-temperature state while heating the wafer via the wafer accommodation body by the heating means in the reaction furnace. The wafer accommodation body comprises a heat flow control unit having a cavity formed for accommodating the wafer, and a heat flow transmission unit which is joined to the heat flow control unit to transfer the heat to the wafer accommodated in the cavity. The contact thermal resistance of the heat flow control unit with the heat flow transfer unit is set to be not lower than 1.0 x 10 m K/W and not greater than 5.0 x 10 m K/W, and the heat flow control unit is formed of a material having the thermal conductivity of not smaller than 0.5 times and not greater than 5 times of the thermal conductivity of the wafer disposed on the heat flow transfer unit.

摘要翻译： 一种气相外延装置包括：可密封的反应炉;晶片容纳体，其安装在反应炉中以将晶片置于预定位置;气体供给装置，用于将原料气体供给至晶片;以及加热装置， 晶圆。 通过反应炉中的加热装置，通过晶片容纳体加热晶片，同时将原料气体供入高温状态的反应炉中，从而在晶片的表面上形成外延膜。 晶片容纳体包括具有形成用于容纳晶片的空腔的热流控制单元以及与热流控制单元接合以将热量传递到容纳在空腔中的晶片的热流传输单元。 热流控制单元与热流转移单元的接触热阻被设定为不小于1.0×10 -6 m 2 K / W且不大于5.0×10 -3 m 2 / 2> K / W，并且所述热流控制单元由热导率不小于设置在热流转移单元上的晶片的导热率的0.5倍且不大于5倍的材料形成。

公开(公告)号：EP1533833A4

公开(公告)日：2007-01-17

申请号：EP02807524

申请日：2002-10-16

申请人： NIPPON MINING CO

发明人： SHIMIZU EIICHI ,  MAKINO NOBUHITO

IPC分类号： C23C16/44 ,  H01L21/205 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12

CPC分类号： C30B25/12 ,  C23C16/4581 ,  C30B25/10 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1064 ,  Y10T117/1068

摘要： A vapor phase epitaxy device, at least comprising an enclosable reactor, a wafer storage part installed in the reactor for disposing a wafer at a specified position, a gas feed means for feeding raw gas to the wafer, and a heating means for heating the wafer, wherein an epitaxy film is formed on the surface of the wafer by feeding the raw gas into the reactor in hot state while the wafer is heated in the reactor by the heating means through the wafer storage part and, when the wafer storage part is formed of a single material or a single member, the ratio R2/R1 of the heat resistance R2 of a heat transfer route extending from the rear surface of the wafer storage part to the front surface of the wafer storage part to the heat resistance R1 of a heat transfer route extending from the rear surface of the wafer storage part to the front surface of the wafer is 0.4 to 1.0.

摘要翻译： 一种气相外延装置，至少包括可封闭的反应器，安装在反应器中用于在特定位置放置晶片的晶片存储部分，用于将原料气体供给晶片的气体供给装置，以及用于加热晶片的加热装置 其特征在于，通过所述加热单元经由所述晶圆收容部在所述反应炉内对所述晶圆进行加热的同时，通过将所述原料气体向所述反应器内供给热状态，从而在所述晶圆的表面形成外延膜，在形成所述晶圆收纳部时 ，从晶片容纳部的背面到晶片容纳部的正面的传热路径的热阻R2与玻璃容纳部的表面的热阻R1之比R2 / R1， 从晶片储存部分的后表面延伸到晶片的前表面的传热路径是0.4到1.0。