摘要:
A semiconductor optical converter for use principally in an optical communication system or an optical information processing system. The semiconductor optical converter comprises an n-InP clad layer (12), an optical waveguide layer (13), an SI-InP clad layer (14), and an n-InP clad layer (15) formed sequentially on an SI-InP substrate (11), characterized in that a voltage is applied from an electrode (16) connected with the n-InP clad layer (15) and a ground electrode (17) connected with the n-InP clad layer (12). The semiconductor optical converter is especially applicable as a semiconductor phase modulator or a semiconductor Mach-Zehnder phase modulator operating at low voltages and having a low waveguide loss.
摘要:
Provided is a lens holder, a lens optical component, or a package equipped with the lens optical component, in which poor welding between a lens housing and the lens holder may not occur. A lens holder includes a pair of leg members inclined and extending to a lens housing from a support member that supports the lens holder at a predetermined position. A distance between pair of leg members is set such that the distance between lower end portions is equal to or larger than a width of the lens housing to be supported, and the distance between upper end portions is equal to or smaller than the width of the lens housing to be supported, and that the distance becomes gradually smaller from the lower end portions to the upper end portions of the legs. A lens optical component includes a lens housing holding a lens, and the lens holder. The pair of leg members at the upper end portions are in contact with the lens housing, and welded at portions in contact with the lens housing. A package is equipped with the lens optical component and two or more optical components. The lens optical component is inserted in an optical path of the two or more optical components, and the height of the lens holder is set to be equal to a height of the input-output portion of an optical device.
摘要:
The present invention provides an optical modulator including a substrate and a phase modulation portion on the substrate. The phase modulation portion includes an optical waveguide comprised of a first clad layer, a semiconductor layer that is laminated on the first clad layer and has a refraction index higher than the first clad layer and a second clad layer that is laminated on the semiconductor layer and has a refraction index lower than the semiconductor layer, a first traveling wave electrode, and a second traveling wave electrode. The semiconductor layer includes a rib that is formed in the optical waveguide in an optical axis direction and is a core of the optical waveguide, a first slab that is formed in the optical axis direction in one side of the rib, a second slab that is formed in the optical axis direction in the other side of the rib, a third slab that is formed in the first slab in the optical axis direction at the opposite side to the rib, and a fourth slab that is formed in the second slab in the optical axis direction at the opposite side to the rib. The first slab is formed to be thinner than the rib and the third slab, and the second slab is formed to be thinner than the rib and the fourth slab.
摘要:
Degradation in an optical characteristic attributed to thermal stress and mechanical external force is suppressed in an optical component that a part of a waveguide type optical device is fixed to a convex portion of a mount. First and second optical device support bases (301, 302), opposed to each other, are fixed to a second waveguide type optical device (202) at clearances away from a mount (210). First and second presser support bases (311, 312) are disposed on the mount (210), and are also opposed to each other. A presser member (313) is disposed on the first and second optical device support bases (301, 302), and is fixed by the first and second presser support bases (311, 312) at clearances away from the first and second optical device support bases (301, 302). The second waveguide type optical device (202) and the first and second optical device support bases (301, 302) are not fixed to the surrounding members thereof, and are slidable in a direction parallel to the surface of the mount (210).
摘要:
A semiconductor photoelectron waveguide having an nin-type heterostructure enabling stable operation of an optical modulator. The waveguide has a core layer (11) having a structure determined so that the electro-optical effect effectively acts with an operating light wavelength and light absorption does not result in a problem. Intermediate clad layers (12-1, 12-2) having a band gap larger than that of the core layer (11) are formed on the upper and lower surfaces of the core layer (11) so as to prevent carriers produced by light absorption from being trapped at the heterointerface. Clad layers (13-1, 13-2) having band gaps larger than those of the intermediate clad layers are formed on the upper surface of the intermediate clad layer (12-1) and on the lower surface of the intermediate clad layer (12-2). A p-type layer (15) and an n-type layer (16) are formed sequentially over the upper surface of the clad layer (13-1). The whole region of the p-type layer (15) and a part or the whole of the region of the n-type layer (16) are depleted within the applied voltage region used in an operating mode.