公开(公告)号：EP4191326A1

公开(公告)日：2023-06-07

申请号：EP20948171.2

申请日：2020-08-03

申请人： Nippon Telegraph And Telephone Corporation

发明人： OZAKI, Josuke ,  OGISO, Yoshihiro ,  HASHIZUME, Yasuaki ,  TANOBE, Hiromasa ,  ISHIKAWA, Mitsuteru

IPC分类号： G02F1/025

摘要： A semiconductor IQ optical modulator in which a phase modulation unit is configured by a differential capacitively loaded traveling-wave electrode structure based on an SS line configuration, phase modulation units of adjacent channels are spaced apart from each other by 400 µm or more, a distance between main signal lines of the capacitance loading type structure is 60 µm or less, a DC phase adjustment electrode and a PAD are provided between an I side phase modulation unit and a Q side phase modulation unit, the DC phase adjustment electrode is spaced apart by at least 80 µm or more from a signal line of the phase adjustment unit, and a crosstalk characteristic between the adjacent channels is -30 dB or less in a required frequency band.

公开(公告)号：EP2230549A1

公开(公告)日：2010-09-22

申请号：EP08869482.3

申请日：2008-12-26

申请人： NTT Electronics Corporation ,  Nippon Telegraph and Telephone Corporation

发明人： ISHIBASHI, Tadao ,  MARUYAMA, Kazuhiro ,  KOBAYASHI, Kenji ,  AKEYOSHI, Tomoyuki ,  KIKUCHI, Nobuhiro ,  TSUZUKI, Ken ,  ISHIKAWA, Mitsuteru

IPC分类号： G02F1/025

CPC分类号： G02F1/025 ,  G02F2201/07

摘要： A semiconductor optical modulator according to the present invention includes a first semiconductor optical waveguide having a laminated structure including a core layer, a first clad layer, a second clad layer, and a barrier layer, the first clad layer and the second clad layer being disposed below and above the core layer, the barrier layer being inserted between the second clad layer and the core layer; a second semiconductor optical waveguide having a laminated structure in which the second clad layer has a p-type semiconductor penetrating locally through a n-type semiconductor in a laminated direction in the laminated structure of the first semiconductor optical waveguide; a first electrode connected to the first clad layer of the first semiconductor optical waveguide; and a second electrode electrically connecting the second clad layer of the first semiconductor optical waveguide and the p-type semiconductor of the second clad layer of the second semiconductor optical waveguide.

摘要翻译： 根据本发明的半导体光调制器包括具有层叠结构的第一半导体光波导，其包括芯层，第一覆盖层，第二覆盖层和阻挡层，第一覆盖层和第二覆盖层被布置 在芯层的下方和上方，阻挡层插入在第二覆盖层和芯层之间; 具有叠层结构的第二半导体光波导，其中所述第二覆盖层具有在所述第一半导体光波导的层叠结构中在层叠方向上局部穿过n型半导体的p型半导体; 连接到第一半导体光波导的第一包层的第一电极; 以及第二电极，电连接第一半导体光波导的第二包层和第二半导体光波导的第二包层的p型半导体。

公开(公告)号：EP4030224A1

公开(公告)日：2022-07-20

申请号：EP19945236.8

申请日：2019-09-13

申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

发明人： OGISO, Yoshihiro ,  OZAKI, Josuke ,  HASHIZUME, Yasuaki ,  ISHIKAWA, Mitsuteru ,  NUNOYA, Nobuhiro

IPC分类号： G02F1/01

摘要： Provided is an IQ optical modulator including a nest-type MZ optical waveguide having optical modulation regions of I channel and Q channel. End portions of an input optical waveguide and an output optical waveguide of the IQ optical modulator are located on a same edge face of a chip of the IQ optical modulator, an optical cross waveguide is included in which an optical waveguide between a first optical combiner and a second optical combiner of the nest-type MZ optical waveguide and the input optical waveguide cross each other, a first optical divider is provided between the I-channel optical modulation region and the Q-channel optical modulation region, and a light propagation direction in the first optical divider and a light propagation direction in the optical modulation regions are opposite to each other.

公开(公告)号：EP2230549B1

公开(公告)日：2015-08-12

申请号：EP08869482.3

申请日：2008-12-26

申请人： NTT Electronics Corporation ,  Nippon Telegraph and Telephone Corporation

发明人： ISHIBASHI, Tadao ,  MARUYAMA, Kazuhiro ,  KOBAYASHI, Kenji ,  AKEYOSHI, Tomoyuki ,  KIKUCHI, Nobuhiro ,  TSUZUKI, Ken ,  ISHIKAWA, Mitsuteru

IPC分类号： G02F1/025

CPC分类号： G02F1/025 ,  G02F2201/07