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    ELECTRODE PAD ON CONDUCTIVE SEMICONDUCTOR SUBSTRATE
    1.
    发明公开
    ELECTRODE PAD ON CONDUCTIVE SEMICONDUCTOR SUBSTRATE 有权
    ELEKTRODEN-KONTAKTSTELLE AUF EINEMLEITFÄHIGENHALBLEITERSUBSTRAT

    公开(公告)号：EP1748476A1

    公开(公告)日：2007-01-31

    申请号：EP05741538.2

    申请日：2005-05-18

    申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION

    发明人： AKAGE, Yuichi ,  FUKANO, Hideki ,  YAMANAKA, Takayuki ,  SAITOH, Tadashi

    IPC分类号： H01L21/3205 ,  H01L21/60 ,  H01L27/14 ,  H01S5/042

    CPC分类号： B82Y20/00 ,  G02B6/122 ,  G02B6/13 ,  G02B2006/121 ,  G02F1/01708 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2924/1305 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01S5/0425 ,  H01L2924/00014 ,  H01L2924/00

    摘要： An electrode pad on a semiconductor substrate having a reduced capacitance of an electrode pad portion and allowing control of a characteristic impedance for a practical electrode pad size is provided. A mesa-stripe type optical waveguide formed by stacking an n-InP clad layer 2, an i layer 3 and a p-InP clad layer and p type contact layer 4 is formed on an n-InP substrate 1, an insulating material film 8 having a mesa-shaped deposited portion 8c near the optical waveguide is formed on the n-InP substrate 1, an electrode 11a and wiring electrodes 11b and 11c for supplying an electrical signal to the optical waveguide are placed on the optical waveguide and the insulating material film 8, respectively, and an electrode pad 10 is placed on the top surface of the mesa-shaped deposited portion 8c, so that the n-InP substrate 1 and the electrode pad 10 have a predetermined interval t 1 (about 17 to 29 µm).

    摘要翻译： 提供了具有减小的电极焊盘部分的电容并且允许控制实用电极焊盘尺寸的特性阻抗的半导体衬底上的电极焊盘。 通过层叠n-InP包层2，i层3和p-InP覆盖层和p型接触层4而形成的台面条型光波导形成在n-InP基板1，绝缘材料膜8 在n-InP基板1上形成具有靠近光波导的台面状沉积部分8c的电极11a和用于向光波导提供电信号的布线电极11b和11c放置在光波导和绝缘材料上 膜8，并且在台面状沉积部分8c的顶表面上放置电极焊盘10，使得n-InP衬底1和电极焊盘10具有预定间隔t 1（约17至29μm ）。