公开(公告)号：EP0467623B1

公开(公告)日：1996-03-13

申请号：EP91306394.7

申请日：1991-07-15

申请人： NOVELLUS SYSTEMS, INC.

发明人： Van den Ven, Everhardus P. ,  Broadbent, Eliot K. ,  Benzing, Jeffrey C. ,  Chin, Barry L. ,  Burkhart, Christopher W.

IPC分类号： C23C16/54 ,  C23C16/04 ,  C23C16/44 ,  H01L21/00

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/455 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/41

公开(公告)号：EP0596551A1

公开(公告)日：1994-05-11

申请号：EP93202903.6

申请日：1993-10-15

申请人： NOVELLUS SYSTEMS, INC.

发明人： Benzing, Jeffrey C. ,  Broadbent, Eliot K. ,  Rough, J. Kirkwood H.

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/321 ,  H05H1/46

摘要： An induction plasma source for integrated circuit fabrication includes a hemispherically shaped induction coil (18) in an expanding spiral pattern about the vacuum chamber (30) containing a semiconductor wafer supported by a platen (40). The windings of the induction coil follow the contour of a hemispherically shaped quartz bell jar, which holds the vacuum. The power source is a low frequency rf source (410) having a frequency of about 450 KHz and a power in the range of 200-2000 watts, and the pressure is a low pressure of about 0.1-100 mTorr. A high frequency rf source (420) independently adjusts the bias voltage on the wafer.

摘要翻译： 用于集成电路制造的感应等离子体源包括围绕真空室（30）的扩展螺旋图案的半球形感应线圈（18），其包含由压板（40）支撑的半导体晶片。 感应线圈的绕组遵循保持真空的半球形石英钟罩的轮廓。 电源是具有约450KHz的频率和200-2000瓦特的功率的低频rf源（410），并且压力是约0.1-100mTorr的低压。 高频RF源（420）独立地调节晶片上的偏置电压。

公开(公告)号：EP0736613A1

公开(公告)日：1996-10-09

申请号：EP96105067.1

申请日：1996-03-29

申请人： Novellus Systems, Inc.

发明人： Benzing, Jeffrey C. ,  McInerney, Edward J. ,  Susoeff, Michael N.

IPC分类号： C23C16/44 ,  B01D1/16 ,  B01J3/02

CPC分类号： C23C16/4481 ,  C23C16/4486

摘要： A cyclone evaporator (100) includes an evaporator body (102) with an evaporation chamber (302) therein. The evaporation chamber preferably includes a thermally conductive sidewall (304) having a generally cylindrical upper portion (314) and a downwardly tapered lower portion (316). The evaporator body further includes a cover (106) having a vapor outlet opening into the evaporation chamber and an outlet tube (308). The outlet tube circumscribes the vapor outlet and extends into a lower portion of the evaporation chamber. A liquid precursor passage and a carrier gas passage extend through the evaporator body and open into the evaporation chamber. In one embodiment, the carrier gas passage is positioned to direct carrier gas parallel to liquid precursor flow and intersect the liquid precursor at a liquid precursor passage outlet within the evaporation chamber. In another embodiment, the carrier gas passage is positioned to direct carrier gas across an outlet of liquid precursor passage. In both embodiments, the carrier gas facilitates atomization of the liquid precursor and flows cyclonically to distribute the atomized liquid precursor within the evaporation chamber. The liquid precursor deposits on the thermally conductive evaporation chamber wall and evaporates to form a gas precursor. The gas precursor flows with the carrier gas and exits the cyclone evaporator through the outlet tube and the vapor outlet. The cyclone evaporator is particularly advantageous for evaporating low vapor pressure liquids useful in semiconductor fabrication processes such as chemical vapor deposition.

摘要翻译： 旋风蒸发器（100）包括其中具有蒸发室（302）的蒸发器本体（102）。 蒸发室优选地包括具有大致圆柱形的上部（314）和向下锥形的下部（316）的导热侧壁（304）。 蒸发器主体还包括具有蒸气出口通向蒸发室的盖（106）和出口管（308）。 出口管围绕蒸汽出口并延伸到蒸发室的下部。 液体前体通道和载气通道延伸穿过蒸发器主体并进入蒸发室。 在一个实施例中，载气通道被定位成引导载气与液体前体流平行，并在蒸发室内的液体前体通道出口处与液体前体相交。 在另一个实施例中，载气通道定位成引导载气穿过液体前体通道的出口。 在两个实施方案中，载气促进液体前体的雾化并且旋流流动以将雾化的液体前体分配在蒸发室内。 液体前体沉积在导热蒸发室壁上并蒸发以形成气体前体。 气体前体与载气一起流动并通过出口管和蒸气出口离开旋风蒸发器。 旋风蒸发器对于蒸发有用于半导体制造工艺如化学气相沉积的低蒸气压液体是特别有利的。

公开(公告)号：EP0698673A1

公开(公告)日：1996-02-28

申请号：EP95112510.3

申请日：1995-08-09

申请人： NOVELLUS SYSTEMS, INC.

发明人： van de Ven, Everhardus P. ,  Broadbent, Eliot K. ,  Benzing, Jeffrey C. ,  Chin, Barry L. ,  Burkhard, Christopher W.

IPC分类号： C23C16/44 ,  C23C16/00 ,  C23C16/54

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： A platen having a substrate contact supports a substrate during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard is positioned adjacent to the substrate contact and has an extension extending over a frontside peripheral region of the substrate. Deposition control gas is introduced through an opening beneath the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a substrate frontside peripheral region. The restrictive opening provides a uniform deposition control gas flow at a pressure greater than reactor ambient pressure and process gas pressure impinging on the frontside of the substrate. Deposition control gas flows uniformly through the restrictive opening across the entire substrate frontside peripheral region, thereby preventing deposition on the substrate edge and backside.

摘要翻译： 具有基板接触的压板在化学气相沉积反应器中沉积钨，金属氮化物，其它金属和硅化物期间支撑基板。 由合适的惰性气体如氩气或惰性气体和反应气体如氩气和氢气的混合物组成的沉积控制气体通过限制性开口引入反应器中的环境中。 排除保护件定位成与衬底接触相邻，并且具有在衬底的前侧周边区域上延伸的延伸部。 沉积控制气体通过排除保护延伸部下面的开口引入，并通过排除保护延伸部和衬底前侧周边区域之间的限制开口排出。 限制性开口提供均匀的沉积控制气流，其压力大于反应器环境压力和冲击衬底前侧的工艺气体压力。 沉积控制气体均匀地流过穿过整个基板前侧周边区域的限制开口，从而防止在基板边缘和背面上的沉积。 $$

公开(公告)号：EP0467623A3

公开(公告)日：1992-05-13

申请号：EP91306394.7

申请日：1991-07-15

申请人： NOVELLUS SYSTEMS, INC.

发明人： Van den Ven, Everhardus P. ,  Broadbent, Eliot K. ,  Benzing, Jeffrey C. ,  Chin, Barry L. ,  Burkhart, Christopher W.

IPC分类号： C23C16/54 ,  C23C16/04 ,  C23C16/44 ,  H01L21/00

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/455 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/41

摘要： A suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced onto the backside of wafers being processed in a CVD reactor during the deposition of tungsten or other metals, metal nitrides and silicides, to avoid deposition of material on the backside of the wafers being processed. Each process station (4b,4c,4d) includes a gas dispersion head (12b,c,d) disposed over a platen (14b,c,d). A vacuum chuck including a number of radial and circular vacuum grooves in the top surface of the platen is provided for holding the wafer in place. A platen heater is provided under the platen. Backside gas is heated in and about the bottom of the platen, and introduced through a circular groove in the peripheral region outside of the outermost vacuum groove of the vacuum chuck. Backside gas pressure is maintained in this peripheral region at a level greater than the CVD chamber pressure. In this manner, backside gas vents from beneath the edge of the wafer on the platen and prevents the process gas from contacting the wafer backside. If the process gas is also to be prevented from contacting the periphery of the wafer frontside, a shroud is urged against the platen to direct the backside gas into a cavity formed between the shroud and the platen. This cavity contains the wafer frontside periphery, so that backside gas venting from between the shroud and the wafer frontside periphery excludes the process gas.

公开(公告)号：EP0698674A3

公开(公告)日：1997-10-29

申请号：EP95112781.0

申请日：1995-08-14

申请人： NOVELLUS SYSTEMS, INC.

发明人： Van de Ven, Everhardus P. ,  Broadbent, Eliot K. ,  Benzing, Jeffrey C. ,  Chin, Barry L. ,  Burkhart, Christopher W. ,  Lane, Lawrence C.

IPC分类号： C23C16/44 ,  H01L21/00

CPC分类号： C23C16/45519 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

公开(公告)号：EP0698674A2

公开(公告)日：1996-02-28

申请号：EP95112781.0

申请日：1995-08-14

申请人： NOVELLUS SYSTEMS, INC.

发明人： Van de Ven, Everhardus P. ,  Broadbent, Eliot K. ,  Benzing, Jeffrey C. ,  Chin, Barry L. ,  Burkhart, Christopher W. ,  Lane, Lawrence C.

IPC分类号： C23C16/44 ,  H01L21/00

CPC分类号： C23C16/45519 ,  C23C16/04 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： A platen supports a wafer during the deposition of tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition reactor. A deposition control gas that includes a suitable inert gas such as argon or a mixture of inert and reactant gases such as argon and hydrogen is introduced through a restrictive opening into an ambient in the reactor. An exclusion guard aligned with the platen has an extension extending over a frontside peripheral region of the wafer. Deposition control gas is introduced under the exclusion guard extension and exits through a restrictive opening between the exclusion guard extension and a wafer frontside peripheral region. The restrictive opening provides a uniform pressure of deposition control gas at the edge and frontside of the wafer to prevent deposition on the wafer edge and backside.

摘要翻译： 压板支持钨，金属氮化物，其它金属，和硅化物的在化学气相沉积反应器中的沉积过程中的晶片。 的沉积控制气体确实包括适当的惰性气体：如氩气或惰性气体和反应物的混合物：如氩气和氢气通过反应器中的限制性开口到在环境中引入。 与该压板对齐的排斥防护件具有延伸到延伸过晶片的前侧外围区域。 沉积控制气体通过排除卫延伸部和晶片前侧周边区域的限制性开口排除卫延伸并退出下引入。 限制性开口提供沉积控制气体在晶片的边缘和前侧的均匀压力，以防止在晶片的边缘和背面沉积。 $$

公开(公告)号：EP0467623A2

公开(公告)日：1992-01-22

申请号：EP91306394.7

申请日：1991-07-15

申请人： NOVELLUS SYSTEMS, INC.

发明人： Van den Ven, Everhardus P. ,  Broadbent, Eliot K. ,  Benzing, Jeffrey C. ,  Chin, Barry L. ,  Burkhart, Christopher W.

IPC分类号： C23C16/54 ,  C23C16/04 ,  C23C16/44 ,  H01L21/00

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/455 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/41

摘要： A suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced onto the backside of wafers being processed in a CVD reactor during the deposition of tungsten or other metals, metal nitrides and silicides, to avoid deposition of material on the backside of the wafers being processed. Each process station (4b,4c,4d) includes a gas dispersion head (12b,c,d) disposed over a platen (14b,c,d). A vacuum chuck including a number of radial and circular vacuum grooves in the top surface of the platen is provided for holding the wafer in place. A platen heater is provided under the platen. Backside gas is heated in and about the bottom of the platen, and introduced through a circular groove in the peripheral region outside of the outermost vacuum groove of the vacuum chuck. Backside gas pressure is maintained in this peripheral region at a level greater than the CVD chamber pressure. In this manner, backside gas vents from beneath the edge of the wafer on the platen and prevents the process gas from contacting the wafer backside. If the process gas is also to be prevented from contacting the periphery of the wafer frontside, a shroud is urged against the platen to direct the backside gas into a cavity formed between the shroud and the platen. This cavity contains the wafer frontside periphery, so that backside gas venting from between the shroud and the wafer frontside periphery excludes the process gas.

摘要翻译： 在钨或其它金属，金属氮化物和硅化物的沉积期间，在CVD反应器中正在处理的晶片的背面上引入合适的惰性气体如氩或惰性和反应性气体如氩气和氢气的混合物，以避免沉积 在正在处理的晶片的背面上的材料。 每个处理站（4b，4c，4d）包括设置在压板（14b，c，d）上方的气体分散头（12b，c，d）。 提供包括在压板顶表面上的多个径向和圆形真空槽的真空吸盘，用于将晶片保持在适当位置。 压板加热器设置在压板下方。 背板气体在压板的底部和周围被加热，并通过真空吸盘的最外面的真空槽外部的周边区域中的圆形槽引入。 在该外围区域中保持大于CVD室压力的水平的背侧气体压力。 以这种方式，后侧气体从压片上的晶片边缘下方排出，并防止处理气体接触晶片背面。 如果还要防止工艺气体接触晶片前端的周边，则护罩被压靠在压板上，以将后侧气体引导到形成在护罩和压板之间的空腔中。 该腔体包含晶片前端周边，从而从罩体和晶片前端周边排出的后侧气体不包括工艺气体。