公开(公告)号：EP2345142A1

公开(公告)日：2011-07-20

申请号：EP09756836.4

申请日：2009-10-28

Applicant: NXP B.V.

Inventor： REIMANN, Klaus ,  BESLING, Willem Frederik Adrianus ,  BERGVELD, Hendrik Johannes ,  NOVOSELOV, Pavel

IPC: H02M3/07

CPC classification number: H02M3/07

Abstract: A charge-pump capacitive DC-DC converter (200) is disclosed, which includes a reconfigurable charge-pump capacitor array. The DC-DC converter is configured to provide a continuously variable ratio between its input voltage (V
in ) and its output voltage (V
out ), by means of at least one of the at least one charge-pump capacitors (C21, C22) forming the reconfigurable array being a variable capacitor. In the embodiments, the one or more variable capacitors (C21, C22) may be a ferroelectric capacitor, an anti-ferroelectric capacitor, or other ferrioc capacitor. The DC-DC converter (200) may provide a bias circuit to the capacitor or capacitors, and may further provide a control loop (220, 230). Alternatively, the capacitor may provide a degree of self-control.

公开(公告)号：EP2334589A1

公开(公告)日：2011-06-22

申请号：EP09787279.0

申请日：2009-09-24

Applicant: NXP B.V.

Inventor： ROOZEBOOM, Freddy ,  GOOSSENS, Martijn ,  BESLING, Willem Frederik Adrianus ,  VERHAEGH, Nynke

IPC: B81B1/00 ,  B81C99/00 ,  H01L29/41 ,  H01L31/0224

CPC classification number: H01L29/41 ,  B81B3/007 ,  B81B2201/06 ,  B81C1/00619 ,  B81C2201/0112 ,  B81C2201/0132 ,  H01L28/91

Abstract: The invention relates to an semiconductor device comprising a first surface and neighboring first and second electric elements arranged on the first surface, in which each of the first and second elements extends from the first surface in a first direction, the first element having a cross section substantially perpendicular to the first direction and a sidewall surface extending at least partially in the first direction, wherein the sidewall surface comprises a first section and a second section adjoining the first section along a line extending substantially parallel to the first direction, wherein the first and second sections are placed at an angle with respect to each other for providing an inner corner wherein the sidewall surface at the inner corner is, at least partially, arranged at a constant distance R from a facing part of the second element for providing a mechanical reinforcement structure at the inner corner.

公开(公告)号：EP2332199A1

公开(公告)日：2011-06-15

申请号：EP09787242.8

申请日：2009-09-18

Applicant: NXP B.V. ,  Koninklijke Philips Electronics N.V.

Inventor： KLOOTWIJK, Johan Hendrik ,  NIESSEN, Rogier Adrianus Henrica ,  NOTTEN, Petrus Henricus Laurentius ,  VERHAEGH, Nynke ,  BESLING, Willem Frederik Adrianus

IPC: H01M2/10 ,  H01M6/40 ,  H01M10/04 ,  H01M10/0585

CPC classification number: H01M6/40 ,  H01M2/1061 ,  H01M6/188 ,  H01M10/0436 ,  H01M10/0525 ,  H01M10/0585 ,  Y10T29/49108 ,  Y10T29/49115

Abstract: The present invention relates to a method of manufacturing a solid- state battery with a high flexibility. The method comprises the steps of: forming an arrangement of battery cells (2) on a first substrate layer and providing a barrier layer (5) between the battery cells and the first substrate layer, applying on the arrangement of battery cells on the side not covered by the first substrate layer a second substrate layer (13), and removing the first substrate layer completely from the barrier layer, applying on the barrier layer a third substrate layer (14).The present invention further refers to the solid-state battery manufactured according to the method, as well as to a device, including the solid-state battery.