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    MEMS DOUBLE-LAYER SUSPENSION MICROSTRUCTURE MANUFACTURING METHOD, AND MEMS INFRARED DETECTOR
    2.
    发明公开
    MEMS DOUBLE-LAYER SUSPENSION MICROSTRUCTURE MANUFACTURING METHOD, AND MEMS INFRARED DETECTOR 审中-公开
    MEMS双层悬浮微结构制造方法和MEMS红外探测器

    公开(公告)号：EP3296254A1

    公开(公告)日：2018-03-21

    申请号：EP16792161.8

    申请日：2016-05-10

    Applicant: CSMC Technologies Fab2 Co., Ltd.

    Inventor： JING, Errong

    IPC: B81B7/02 ,  B81C1/00

    CPC classification number: B81C1/00182 ,  B81B7/02 ,  B81B2201/0207 ,  B81C1/00 ,  B81C1/0015 ,  B81C1/00476 ,  B81C2201/0108 ,  B81C2201/0109 ,  B81C2201/0132 ,  G01J5/20

    Abstract: An MEMS double-layer suspension microstructure manufacturing method, comprising: providing a substrate (100); forming a first dielectric layer (200) on the substrate (100); patterning the first dielectric layer (200) to prepare a first film body (210) and a cantilever beam (220) connected to the first film body (210); forming a sacrificial layer (300) on the first dielectric layer (200); patterning the sacrificial layer (300) located on the first film body (210) to make a recess portioned portion (310) for forming a support structure (420), with the first film body (210) being exposed at the bottom of the recess portioned portion (310); forming a second dielectric layer (400) on the sacrificial layer (300); patterning the second dielectric layer (400) to make the second film body (410) and the support structure (420), with the support structure (420) being connected to the first film body (210) and the second film body (410); and removing part of the substrate under the first film body (210) and removing the sacrificial layer (300) to obtain the MEMS double-layer suspension microstructure. In addition, an MEMS infrared detector is also disclosed.

    Abstract translation: 一种MEMS双层悬浮微结构制造方法，包括：提供衬底（100）; 在衬底（100）上形成第一介电层（200）; 图案化所述第一介电层（200）以制备连接到所述第一膜体（210）的第一膜体（210）和悬臂梁（220）; 在第一介电层（200）上形成牺牲层（300）; 图案化位于第一膜体（210）上的牺牲层（300）以形成用于形成支撑结构（420）的凹陷部分（310），其中第一膜体（210）暴露在凹陷的底部 分部分（310）; 在牺牲层（300）上形成第二介电层（400）; （420）连接到第一膜体（210）和第二膜体（410），图案化第二电介质层（400）以制造第二膜体（410）和支撑结构（420） ; 去除所述第一膜体下方的部分衬底，去除所述牺牲层，得到MEMS双层悬浮微结构。 另外，还公开了一种MEMS红外探测器。

    A METHOD OF MANUFACTURING A PLURALITY OF THROUGH-HOLES IN A LAYER OF MATERIAL
    6.
    发明公开
    A METHOD OF MANUFACTURING A PLURALITY OF THROUGH-HOLES IN A LAYER OF MATERIAL 审中-公开
    一种在材料层中制造多个通孔的方法

    公开(公告)号：EP3210935A1

    公开(公告)日：2017-08-30

    申请号：EP17158193.7

    申请日：2017-02-27

    Applicant: Universiteit Twente

    Inventor： BERENSCHOT, Johan Willem ,  TAS, Niels Roelof

    IPC: B81C1/00

    CPC classification number: B81B1/004 ,  B81B2201/057 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/0361 ,  B81B2203/0369 ,  B81C1/00087 ,  B81C1/00111 ,  B81C2201/0132

    Abstract: A method of manufacturing a plurality of through-holes (132) in a layer of material by subjecting the layer to directional dry etching to provide through-holes (132) in the layer of material; For batch-wise production, the method comprises
    - after a step of providing a layer of first material (220) on base material and before the step of directional dry etching, providing a plurality of holes at the central locations of pits (210),
    - etching base material at the central locations of the pits (210) so as to form a cavity (280) with an aperture (281),
    - depositing a second layer of material (240) on the base material in the cavity (280), and
    - subjecting the second layer of material (240) in the cavity (280) to said step of directional dry etching using the aperture (281) as the opening (141) of a shadow mask.

    Abstract translation: 一种在材料层中制造多个通孔（132）的方法，通过对该层进行定向干法蚀刻以在该材料层中提供通孔（132） 对于批量生产，该方法包括： - 在基材上提供一层第一材料（220），并在定向干法刻蚀步骤之前，在凹坑（210）的中心位置处提供多个孔， - 在凹坑（210）的中心位置蚀刻基材以形成具有孔（281）的空腔（280）; - 在空腔（280）中的基材上沉积第二材料层（240） ，以及 - 使用孔（281）作为荫罩的开口（141），使空腔（280）中的第二材料层（240）经受定向干法蚀刻的所述步骤。

    METHOD OF MAKING A NANOSTRUCTURE AND NANOSTRUCTURED ARTICLES
    8.
    发明公开
    METHOD OF MAKING A NANOSTRUCTURE AND NANOSTRUCTURED ARTICLES 审中-公开
    一种用于生产纳米结构与纳米结构产品

    公开(公告)号：EP3024777A4

    公开(公告)日：2017-01-11

    申请号：EP14829850

    申请日：2014-07-23

    Applicant: 3M INNOVATIVE PROPERTIES CO

    Inventor： DAVID MOSES M ,  YU TA-HUA ,  BATES DANIEL S ,  SETH JAYSHREE ,  BERGER MICHAEL S ,  FRANKE CARSTEN ,  ZEHENTMAIER SEBASTIAN F

    IPC: B82B3/00 ,  B82B1/00

    CPC classification number: C23C16/0245 ,  B81C1/00031 ,  B81C2201/0132 ,  C09J7/22 ,  C09J2201/606 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32541 ,  H01J2237/3321 ,  H01J2237/3341

    Abstract: A method of making a nanostructure and nanostructured articles by depositing a layer to a major surface of a substrate by plasma chemical vapor deposition from a gaseous mixture while substantially simultaneously etching the surface with a reactive species. The method includes providing a substrate; mixing a first gaseous species capable of depositing a layer onto the substrate when formed into a plasma, with a second gaseous species capable of etching the substrate when formed into a plasma, thereby forming a gaseous mixture; forming the gaseous mixture into a plasma; and exposing a surface of the substrate to the plasma, wherein the surface is etched and a layer is deposited on at least a portion of the etched surface substantially simultaneously, thereby forming the nanostructure. The substrate can be a (co)polymeric material, an inorganic material, an alloy, a solid solution, or a combination thereof. The deposited layer can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyl compounds, metal isopropoxide compounds, metal acetylacetonate compounds, metal halide compounds, and combinations thereof. Nanostructures of high aspect ratio and optionally with random dimensions in at least one dimension and preferably in three orthogonal dimensions can be prepared.

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