利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.013 秒)

    THREE-DIMENSIONAL SOLID STATE BATTERY
    3.
    发明公开
    THREE-DIMENSIONAL SOLID STATE BATTERY 审中-公开
    DREIDIMENSIONALE FESTSTOFFBATTERIE

    公开(公告)号：EP2308120A1

    公开(公告)日：2011-04-13

    申请号：EP09786589.3

    申请日：2009-07-14

    申请人： NXP B.V.

    发明人： VERHAEGH, Nynke ,  KLOOTWIJK, Johan Hendrik ,  NOTTEN, Petrus Henricus Laurentius

    IPC分类号： H01M6/18 ,  H01M6/40 ,  H01M10/04 ,  H01M4/134 ,  H01M10/0562 ,  H01M10/052 ,  H01M10/0585 ,  H01M4/1395 ,  H01M4/13 ,  H01M4/139 ,  H01G9/025

    CPC分类号： H01M10/0436 ,  H01M4/13 ,  H01M4/131 ,  H01M4/134 ,  H01M4/139 ,  H01M4/1395 ,  H01M6/18 ,  H01M6/185 ,  H01M6/40 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/0585

    摘要： The present invention relates to a battery in which both electrodes and the electrolyte are solids which is called a solid state battery. Solid electrolytes are a class of materials also known as superionic conductors and fast ion conductors, and their study belongs to an area of science known as solid-state ionics. As a group, these materials are very good conductors of ions but are essentially insulating toward electrons, properties that are prerequisites for any electrolyte. The high ionic conductivity minimizes the internal resistance of the battery, thus permitting high power densities, while the high electronic resistance minimizes its self-discharge rate, thus enhancing its shelf life. Solid-state batteries generally fall into the low-power-density and high- energy-density category. The former limitation arises because of the difficulty of getting high currents across solid–solid interfaces.

    摘要翻译： 本发明涉及一种电池，其中两个电极和电解质都是称为固态电池的固体。 固体电解质是一类也称为超离子导体和快离子导体的材料，它们的研究属于称为固态离子的科学领域。 作为一组，这些材料是非常好的离子导体，但是基本上与电子绝缘，作为任何电解质的先决条件的性质。 高离子电导率使电池的内部电阻最小化，从而允许高功率密度，而高电子电阻使其自放电率最小化，从而提高其保质期。 固态电池通常属于低功率密度和高能量密度类别。 前者的局限性是由于难以在固体 - 固体界面上获得高电流。

    A CAPACITOR AND A METHOD OF MANUFACTURING THE SAME
    6.
    发明公开
    A CAPACITOR AND A METHOD OF MANUFACTURING THE SAME 审中-公开
    电容器及其制造方法

    公开(公告)号：EP2319060A1

    公开(公告)日：2011-05-11

    申请号：EP09786898.8

    申请日：2009-08-11

    申请人： NXP B.V.

    发明人： FURUKAWA, Yukiko ,  KOCHUPURACKAL, Jinesh Balakrishna Pillai ,  KLOOTWIJK, Johan Hendrik ,  PASVEER, Frank

    IPC分类号： H01G4/10 ,  H01G4/12 ,  H01G4/20

    CPC分类号： H01G4/1227 ,  H01G4/10 ,  H01G4/20

    摘要： A capacitor (110), wherein the capacitor (110) comprises a capacitor dielectric (112) comprising a dielectric matrix (114) of a first value of permittivity, and a plurality of nanoclusters (116) of a second value of permittivity which is larger than the first value of permittivity which are at least partially embedded in the dielectric matrix (114), wherein the plurality of nanoclusters (116) are formed in the dielectric matrix (114) by spontaneous nucleation.

    摘要翻译： 一种电容器（110），其中电容器（110）包括电容器电介质（112），该电容器电介质（112）包括具有第一介电常数值的介电基质（114）和具有较大介电常数的第二值的多个纳米团簇（116） 比至少部分嵌入在介电基体（114）中的介电常数的第一值大，其中通过自发成核在介电基体（114）中形成多个纳米团簇（116）。

    PLANAR, MONOLITHICALLY INTEGRATED COIL
    7.
    发明公开
    PLANAR, MONOLITHICALLY INTEGRATED COIL 有权
    平面单片集成COIL

    公开(公告)号：EP2297751A2

    公开(公告)日：2011-03-23

    申请号：EP09772999.0

    申请日：2009-06-30

    申请人： NXP B.V.

    发明人： ROOZEBOOM, Freddy ,  REEFMAN, Derk ,  KLOOTWIJK, Johan Hendrik ,  TIEMEIJER, Lukas Frederik ,  RUIGROK, Jaap

    IPC分类号： H01F27/36

    CPC分类号： H01F17/0006 ,  H01F27/365 ,  H01F2017/0066 ,  H01F2017/008

    摘要： The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. Inmany applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 μH, and must have an equivalent series resistance of less than 0.1 Ω. For this reason, those inductors are always bulky components, of a typical size of 2 x 2 x 1 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 veryhigh DC resistance values.