公开(公告)号：EP4369383A1

公开(公告)日：2024-05-15

申请号：EP23201782.2

申请日：2023-10-05

申请人： NXP B.V.

发明人： Mao, Kuan-Hsiang ,  Gong, Zhiwei ,  Tracht, Neil Thomas

IPC分类号： H01L21/56 ,  H01L23/13 ,  H01L23/538

CPC分类号： H01L23/13 ,  H01L23/5389 ,  H01L21/561

摘要： A method of forming a semiconductor device is provided. The method includes forming a first cavity at a first major surface of a first encapsulant. A first semiconductor die is affixed on the first major surface of the first encapsulant and a second semiconductor die is affixed on a bottom surface of the first cavity. A second encapsulant encapsulates the first semiconductor die, the second semiconductor die, and at least exposed portions of the first major surface of the first encapsulant. A package substrate is formed on a first major surface of the second encapsulant. The package substrate includes conductive traces interconnected to the first semiconductor die and the second semiconductor die.