公开(公告)号：EP2183058A2

公开(公告)日：2010-05-12

申请号：EP08780126.2

申请日：2008-07-11

申请人： Nanogram Corporation

发明人： HOLUNGA, Dean, M. ,  MCGOVERN, William, E. ,  LYNCH, Robert, B.

IPC分类号： B05D3/00 ,  B05D7/00 ,  B05D1/12 ,  B29C71/04 ,  B05B5/025

CPC分类号： B01J19/121 ,  B01J2219/0869 ,  B01J2219/0871 ,  B82Y30/00 ,  B82Y40/00 ,  C01G1/02 ,  C01G23/07 ,  C01P2002/72 ,  C01P2004/51 ,  C01P2004/64 ,  C01P2006/12

摘要： Laser pyrolysis apparatuses can provide for the engineering of product inorganic particles in-flight through the use of jet inlets that introduce a composition, such as an inert gas or a surface modifying composition, at high velocity. Under strong mixing conditions, the inorganic particle flow can be manipulated while also reducing particle agglomeration. These strong mixing apparatuses have been found to be effective at forming high quality crystals with structures that inherently grow relatively slowly through the slowing of the quenching process to maintain the crystal development until a desired high degree of crystallinity is achieved. Also, the surface chemistry of the particles can be manipulated in the flow to engineer desired inorganic particle surface chemistry.

公开(公告)号：EP1997126A2

公开(公告)日：2008-12-03

申请号：EP07753016.0

申请日：2007-03-13

申请人： Nanogram Corporation

发明人： HIESLMAIR, Henry ,  MOSSO, Ronald, J. ,  LYNCH, Robert, B. ,  CHIRUVOLU, Shivkumar ,  MCGOVERN, William, E. ,  HORNE, Craig, R. ,  SOLAYAPPAN, Narayan ,  CORNELL, Ronald, M.

IPC分类号： H01L21/20 ,  H01L21/31 ,  H01L21/205

CPC分类号： C23C16/54 ,  C23C16/01 ,  C23C16/24 ,  C23C16/482 ,  C23C16/483 ,  H01L31/0236 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/0475 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T29/41 ,  Y10T428/14 ,  Y10T428/24802

摘要： Thin semiconductor foils can be formed using light reactive deposition. These foils can have an average thickness of less than 100 microns. In some embodiments, the semiconductor foils can have a large surface area, such as greater than about 900 square centimeters. The foil can be free standing or releasably held on one surface. The semiconductor foil can comprise elemental silicon, elemental germanium, silicon carbide, doped forms thereof, alloys thereof or mixtures thereof. The foils can be formed using a release layer that can release the foil after its deposition. The foils can be patterned, cut and processed in other ways for the formation of devices. Suitable devices that can be formed form the foils include, for example, photovoltaic modules and display control circuits.

公开(公告)号：EP2588227A2

公开(公告)日：2013-05-08

申请号：EP11804119.3

申请日：2011-06-28

申请人： Nanogram Corporation

发明人： CHIRUVOLU, Shivkumar ,  ALTMAN, Igor ,  FREY, Bernard, M. ,  LI, Weidong ,  LIU, Guojun ,  LYNCH, Robert, B. ,  PENGRA-LEUNG, Gina, Elizabeth ,  SRINIVASAN, Uma

IPC分类号： B01J13/00 ,  C01B33/02 ,  C01G17/00 ,  C09D11/00 ,  B01J19/08

CPC分类号： C09D11/38 ,  B01D21/262 ,  B01J19/121 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0875 ,  B82Y30/00 ,  C01B33/02 ,  C08K3/08 ,  C08K3/36 ,  C08K9/02 ,  C09D5/24 ,  C09D7/67 ,  C09D7/68 ,  C09D7/80 ,  C09D11/037 ,  C09D11/101 ,  C09D11/322 ,  C09D11/36 ,  C09D11/52 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02601 ,  H01L21/02628 ,  H01L23/4828 ,  H01L23/53276 ,  H01L31/00 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/1864 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  H01L2924/00

摘要： Laser pyrolysis reactor designs and corresponding reactant inlet nozzles are described to provide desirable particle quenching that is particularly suitable for the synthesis of elemental silicon particles. In particular, the nozzles can have a design to encourage nucleation and quenching with inert gas based on a significant flow of inert gas surrounding the reactant precursor flow and with a large inert entrainment flow effectively surrounding the reactant precursor and quench gas flows. Improved silicon nanoparticle inks are described that has silicon nanoparticles without any surface modification with organic compounds. The silicon ink properties can be engineered for particular printing applications, such as inkjet printing, gravure printing or screen printing. Appropriate processing methods are described to provide flexibility for ink designs without surface modifying the silicon nanoparticles.

公开(公告)号：EP1644552A2

公开(公告)日：2006-04-12

申请号：EP04754404.4

申请日：2004-06-04

申请人： Nanogram Corporation

发明人： HORNE, Craig, R. ,  MCGOVERN, William, E. ,  LYNCH, Robert, B. ,  MOSSO, Ronald, J.

IPC分类号： C23C16/00

CPC分类号： C23C16/405 ,  C23C16/403 ,  C23C16/483 ,  C23C18/06 ,  C23C18/1204 ,  C23C18/1216 ,  C23C18/1241 ,  C23C18/14 ,  C23C24/00 ,  C23C26/00 ,  H01M4/8621 ,  H01M4/8885 ,  H01M4/9066 ,  H01M4/92 ,  H01M8/0271 ,  H01M8/0273 ,  H01M8/1213 ,  H01M8/1246 ,  H01M8/2485 ,  H01M2008/1293 ,  H01M2300/0082 ,  H01M2300/0094 ,  Y02E60/525 ,  Y02P70/56

摘要： Light reactive deposition can be adapted effectively for the deposition of one or more electrochemical cell components. In particular, electrodes, electrolytes, electrical interconnects can be deposited form a reactive flow. In some embodiments, the reactive flow comprises a reactant stream that intersects a light beam to drive a reaction within a light reactive zone to produce product that is deposited on a substrate. The approach is extremely versatile for the production of a range of compositions that are useful in electrochemical cells and fuel cell, in particular. The properties of the materials, including the density and porosity can be adjusted based on the deposition properties and any subsequent processing including, for example, heat treatments.