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    CURRENT-PERPENDICULAR-TO-PLANE MAGNETO-RESISTANCE EFFECT ELEMENT
    1.
    发明公开
    CURRENT-PERPENDICULAR-TO-PLANE MAGNETO-RESISTANCE EFFECT ELEMENT 有权
    电流 - 平面 - 平面磁阻效应元件

    公开(公告)号：EP2983219A1

    公开(公告)日：2016-02-10

    申请号：EP14778602.4

    申请日：2014-04-02

    申请人： National Institute for Materials Science

    发明人： DU Ye ,  FURUBAYASHI Takao ,  TAKAHASHI Yukiko ,  HONO Kazuhiro

    IPC分类号： H01L43/08 ,  G11B5/39 ,  H01L43/10

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/09 ,  G11B5/1278 ,  G11B5/39 ,  G11B5/3906 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

    摘要： The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.

    摘要翻译： 本发明的CPPGMR元件具有形成在衬底11上以将赫斯勒合金构造成（100）方向的取向层12，堆叠在取向层12上的作为用于磁阻测量的电极的底层13， 下层铁磁层14和上层铁磁层16，每层堆叠在底层13上并由赫斯勒合金制成，夹在下层铁磁层14和上层铁磁层16之间的间隔层15以及层叠在 上部铁磁层16用于表面保护。 这种方式使得可以廉价地提供使用具有铁磁金属/非磁性金属/铁磁金属的三层结构的薄膜的电流垂直面对巨磁阻效应（CPPGMR）的元件， 从而表现出优异的表现

    MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD USING MAGNETORESISTIVE ELEMENT, AND MAGNETIC PLAYBACK DEVICE
    3.
    发明公开
    MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD USING MAGNETORESISTIVE ELEMENT, AND MAGNETIC PLAYBACK DEVICE 审中-公开
    磁阻元件，使用磁阻元件的磁头，以及磁性回放装置

    公开(公告)号：EP3176843A1

    公开(公告)日：2017-06-07

    申请号：EP15827179.1

    申请日：2015-07-28

    申请人： National Institute for Materials Science

    发明人： FURUBAYASHI Takao ,  TAKAHASHI Yukiko ,  HONO Kazuhiro ,  DU Ye

    IPC分类号： H01L43/08 ,  G11B5/39 ,  H01L43/10

    摘要： The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.

    摘要翻译： 本发明解决了提供使用具有铁磁金属/非磁性金属/铁磁金属的三层结构的薄膜的电流垂直平面巨磁电阻（CPPGMR）效应的元件的问题。 该问题通过设置有包含赫斯勒合金的下部铁磁层和上部铁磁层以及夹在下部铁磁层和上部铁磁层之间的间隔层的磁阻元件来解决，所述磁阻元件的特征在于，间隔件 层含有具有bcc结构的合金。 此外，合金优选具有无序的bcc结构。