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公开(公告)号：EP3144976B1
公开(公告)日：2018-12-26
申请号：EP15793024.9
申请日：2015-04-23
发明人： SAITO Yuta , TOMINAGA Junji , KONDO Reiko
IPC分类号： H01L29/82 , H01L27/105 , C30B23/02 , C30B29/46 , C30B29/68 , C23C14/34 , H01L45/00 , G11C11/16
CPC分类号： H01L45/06 , C23C14/34 , C30B23/025 , C30B29/46 , C30B29/68 , G11C11/161 , H01L27/105 , H01L29/82 , H01L45/143 , H01L45/144 , H01L45/1625
摘要： A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb 2 Te 3 , BiTe, Bi 2 Te 3 , BiSe and Bi 2 Se 3 as a main component, and which is oriented in a certain crystal orientation
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2.发明公开CRYSTALLINE ALIGNMENT LAYER LAMINATE STRUCTURE, ELECTRONIC MEMORY, AND METHOD FOR MANUFACTURING CRYSTALLINE ALIGNMENT LAYER LAMINATE STRUCTURE 审中-公开层压结构用于液晶取向层，电子存储器及其制造方法液晶取向层的层叠结构
公开(公告)号：EP3144976A1
公开(公告)日：2017-03-22
申请号：EP15793024.9
申请日：2015-04-23
发明人： SAITO Yuta , TOMINAGA Junji , KONDO Reiko
IPC分类号： H01L29/82 , C30B29/52 , H01L21/8246 , H01L27/105
CPC分类号： H01L45/06 , C23C14/34 , C30B23/025 , C30B29/46 , C30B29/68 , G11C11/161 , H01L27/105 , H01L29/82 , H01L45/143 , H01L45/144 , H01L45/1625
摘要： A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb 2 Te 3 , BiTe, Bi 2 Te 3 , BiSe and Bi 2 Se 3 as a main component, and which is oriented in a certain crystal orientation
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