公开(公告)号：EP3012880B1

公开(公告)日：2017-11-29

申请号：EP15189988.7

申请日：2015-10-15

申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

发明人： PERNIOLA, Luca ,  DIENY, Bernard

IPC分类号： H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01F10/32

CPC分类号： H01L45/146 ,  G11C11/005 ,  G11C11/16 ,  G11C11/161 ,  G11C13/0004 ,  G11C13/0007 ,  H01F10/3254 ,  H01L27/222 ,  H01L27/2463 ,  H01L43/12 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1675

公开(公告)号：EP3245312A1

公开(公告)日：2017-11-22

申请号：EP15820773.8

申请日：2015-12-17

申请人： Nuvosun, Inc.

发明人： HOLLARS, Dennis R. ,  PAULSON, Puthur ,  PERSON, Donald ,  WALL, Arthur C.

IPC分类号： C23C14/06 ,  C23C14/34 ,  C23C14/58 ,  C22C29/00 ,  H01L21/02 ,  H01L31/032

CPC分类号： H01L21/02568 ,  C22C29/00 ,  C22C32/0089 ,  C23C14/0057 ,  C23C14/0623 ,  C23C14/0694 ,  C23C14/3414 ,  C23C14/3464 ,  C23C14/5806 ,  C23C14/5866 ,  H01L21/02266 ,  H01L21/02417 ,  H01L21/02485 ,  H01L21/02614 ,  H01L21/02631 ,  H01L31/02008 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/188 ,  H01L45/141 ,  H01L45/16 ,  H01L45/1625 ,  Y02E10/541

摘要： The present invention provides methods to sputter deposit films comprising alkali metal compounds. At least one target comprising one or more alkali metal compounds and at least one metallic component is sputtered to form one or more corresponding sputtered films. The at least one target has an atomic ratio of the alkali metal compound to the at least one metallic component in the range from 15:85 to 85:15. The sputtered film(s) incorporating such alkali metal compounds are incorporated into a precursor structure also comprising one or more chalcogenide precursor films. The precursor structure is heated in the presence of at least one chalcogen to form a chalcogenide semiconductor. The resultant chalcogenide semiconductor comprises up to 2 atomic percent of alkali metal content, wherein at least a major portion of the alkali metal content of the resultant chalcogenide semiconductor is derived from the sputtered film(s) incorporating the alkali metal compound(s). The chalcogenide semiconductors are useful in microelectronic devices, including solar cells.

公开(公告)号：EP3144976A1

公开(公告)日：2017-03-22

申请号：EP15793024.9

申请日：2015-04-23

申请人： National Institute of Advanced Industrial Science and Technology

发明人： SAITO Yuta ,  TOMINAGA Junji ,  KONDO Reiko

IPC分类号： H01L29/82 ,  C30B29/52 ,  H01L21/8246 ,  H01L27/105

CPC分类号： H01L45/06 ,  C23C14/34 ,  C30B23/025 ,  C30B29/46 ,  C30B29/68 ,  G11C11/161 ,  H01L27/105 ,  H01L29/82 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1625

摘要： A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb 2 Te 3 , BiTe, Bi 2 Te 3 , BiSe and Bi 2 Se 3 as a main component, and which is oriented in a certain crystal orientation

公开(公告)号：EP2559068B1

公开(公告)日：2015-05-20

申请号：EP11717383.1

申请日：2011-04-12

申请人： Sandisk 3d, Llc

发明人： KREUPL, Franz ,  PING, Er-Xuan ,  ZHANG, Jingyan ,  XU, Huiwen

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L45/149 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/165 ,  H01L45/1691

公开(公告)号：EP2626902A4

公开(公告)日：2015-04-29

申请号：EP11830388

申请日：2011-10-06

申请人： PANASONIC IP MAN CO LTD

发明人： MIKAWA TAKUMI ,  HAYAKAWA YUKIO ,  NINOMIYA TAKEKI ,  KAWASHIMA YOSHIO ,  YONEDA SHINICHI

IPC分类号： H01L45/00

CPC分类号： H01L45/145 ,  H01L27/101 ,  H01L45/08 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1625

公开(公告)号：EP2161750B1

公开(公告)日：2014-09-10

申请号：EP09015737.1

申请日：2004-11-26

申请人： Sony Corporation

发明人： Aratani, Katsuhisa ,  Maesaka, Akihiro ,  Kouchiyama, Akira ,  Tsushima, Tomohito

IPC分类号： H01L27/10 ,  H01L27/24 ,  H01L45/00 ,  G11C13/00

CPC分类号： G11C13/0011 ,  G11C13/0007 ,  G11C2213/11 ,  G11C2213/15 ,  G11C2213/33 ,  G11C2213/34 ,  G11C2213/56 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625

公开(公告)号：EP2650408A4

公开(公告)日：2014-09-03

申请号：EP11847480

申请日：2011-11-28

申请人： FUJI ELECTRIC CO LTD

发明人： OGIMOTO YASUSHI

IPC分类号： H01L45/00 ,  C23C14/08 ,  C23C14/24

CPC分类号： H01L43/10 ,  C23C14/08 ,  C23C14/28 ,  C30B23/066 ,  C30B29/22 ,  H01L43/12 ,  H01L45/04 ,  H01L45/147 ,  H01L45/1625 ,  Y10T428/1259 ,  Y10T428/265

公开(公告)号：EP2255388A4

公开(公告)日：2014-01-08

申请号：EP09718835

申请日：2009-03-10

申请人： TOSHIBA KK

发明人： ARAKI TAKESHI ,  TSUKAMOTO TAKAYUKI ,  YAMAGUCHI TAKESHI

IPC分类号： H01L45/00

CPC分类号： H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

公开(公告)号：EP2559068A1

公开(公告)日：2013-02-20

申请号：EP11717383.1

申请日：2011-04-12

申请人： Sandisk 3d, Llc

发明人： KREUPL, Franz ,  PING, Er-Xuan ,  ZHANG, Jingyan ,  XU, Huiwen

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L45/149 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/165 ,  H01L45/1691

摘要： In a first aspect, a method of forming a metal-insulator-metal ("MIM") stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.

公开(公告)号：EP2348555B1

公开(公告)日：2013-01-23

申请号：EP11160411.2

申请日：2005-07-21

申请人： Nippon Telegraph And Telephone Corporation

发明人： JIN, Yoshito ,  SAKAI, Hideaki ,  SHIMADA, Masaru

IPC分类号： H01L45/00 ,  C23C14/08 ,  C23C14/35 ,  H01L27/10 ,  H01L27/24 ,  G11C13/00

CPC分类号： C23C14/08 ,  C23C14/357 ,  G11C13/0007 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/147 ,  H01L45/1625