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公开(公告)号：EP2670881B1
公开(公告)日：2015-12-09
申请号：EP12704561.5
申请日：2012-01-30
IPC分类号： C23C16/44 , C23C16/458 , C23C16/54 , C23C16/455 , B08B5/02
CPC分类号： B05D1/42 , C23C16/4401 , C23C16/45551 , C23C16/4583 , C23C16/54
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公开(公告)号：EP2539484A1
公开(公告)日：2013-01-02
申请号：EP11705293.6
申请日：2011-02-23
申请人： Nederlandse Organisatie voor Toegepast -Natuurwetenschappelijk Onderzoek TNO , Vision Dynamics Holding B.V.
IPC分类号： C23C16/02 , C23C16/04 , C23C16/54 , C23C16/455 , H01J37/32
CPC分类号： C23C16/047 , C23C16/0245 , C23C16/45536 , C23C16/45544 , C23C16/45551 , C23C16/545 , H01J37/32366 , H01J37/32403 , H01J37/32449 , H01J37/32568 , H01J37/32623 , H01J2237/3321
摘要： Method for depositing a layer on a surface of a substrate. The method comprises injecting (16) a precursor gas from a precursor supply into a deposition cavity (18) for contacting the substrate surface, draining part (22) of the injected precursor gas from the deposition cavity, and positioning the deposition cavity and the substrate (14) relative to each other along a plane of the substrate surface. The method further comprising providing a first electrode and a second electrode, positioning the first electrode and the substrate relative to each other, and generating a plasma discharge near the substrate for contacting the substrate by generating a high-voltage difference between the first electrode and the second electrode. The method comprises generating the plasma discharge selectively, for patterning the surface by means of the plasma. A portion of the substrate contacted by the precursor gas selectively overlaps with a portion of the substrate contacted by the plasma.
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公开(公告)号：EP2534278A1
公开(公告)日：2012-12-19
申请号：EP11704333.1
申请日：2011-02-11
IPC分类号： C23C16/54 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.
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公开(公告)号：EP2536866B1
公开(公告)日：2018-04-04
申请号：EP11705289.4
申请日：2011-02-17
发明人： DE GRAAF, Ariël , VAN ZWET, Erwin John , POODT, Paulus Willibrordus George , VERMEER, Adrianus Johannes Petrus Maria
IPC分类号： C23C16/04 , C23C16/54 , C23C16/455
CPC分类号： C23C16/45551 , C23C16/04 , C23C16/545
摘要： A method of manufacturing a substrate with a patterned layer of deposited material, the patterned layer being deposited from a processing head, the method comprising - applying bearing gas from the processing head to keep the processing head hovering over the substrate on a gas bearing; - moving the substrate and the hovering processing head relative to each other; - applying a primer material for selective deposition of a deposition material to the substrate, the primer material being applied from a first area of a surface of the processing head that faces the substrate, and spatially patterning the primer on the substrate after or during application; - applying the deposition material to the substrate from a second area of the surface of the processing head that faces the substrate, the second area lying downstream of the first area in a direction of the movement of the substrate relative to the processing head.
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公开(公告)号：EP2534278B8
公开(公告)日：2015-05-27
申请号：EP11704333.1
申请日：2011-02-11
IPC分类号： C23C16/54 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.
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公开(公告)号：EP2534278B1
公开(公告)日：2015-04-01
申请号：EP11704333.1
申请日：2011-02-11
IPC分类号： C23C16/54 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45551 , C23C16/45563 , C23C16/45589 , C23C16/458 , C23C16/52 , C23C16/545 , H01L21/67784
摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.
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公开(公告)号：EP2670882A1
公开(公告)日：2013-12-11
申请号：EP12704560.7
申请日：2012-01-30
IPC分类号： C23C16/458 , C23C16/54 , C23C16/455 , F16C32/06 , B65G51/03
CPC分类号： C23C16/44 , C23C16/45551 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/54 , F16C32/0603 , F16C32/0685
摘要： Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed. A support part arranged opposite the injector head, the support part constructed to provide a gas bearing pressure arrangement that balances the injector head gas-bearing in the conveying plane, so that the substrate is held supportless by said gas bearing pressure arrangement in between the injector head and the support part.
摘要翻译： 1。一种用于在片状基底的表面上进行原子层沉积的设备，包括：注入头，所述注入头包括设置有前体供应和前驱排放的沉积空间; 所述供应和排出装置设置用于提供从前体供应源经由沉积空间到达前体排出口的前体气体流; 使用中的沉积空间由注射器头部和基板表面界定; 包括轴承气体喷射器的气体轴承，所述轴承气体喷射器布置成用于在所述喷射器头和所述衬底表面之间注入轴承气体，所述轴承气体因此形成气体轴承; 输送系统，所述输送系统提供所述衬底和所述注射器头沿着所述衬底的平面的相对移动以形成所述衬底沿着其传送的传送平面。 支撑部分与喷射器头相对设置，支撑部分构造成提供气体轴承压力布置，该布置使喷射器头部气体轴承在输送平面中平衡，使得基板通过所述气体轴承压力布置保持在喷射器之间 头部和支撑部分。
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公开(公告)号：EP2536866A1
公开(公告)日：2012-12-26
申请号：EP11705289.4
申请日：2011-02-17
发明人： DE GRAAF, Ariël , VAN ZWET, Erwin John , POODT, Paulus Willibrordus George , VERMEER, Adrianus Johannes Petrus Maria
IPC分类号： C23C16/04 , C23C16/54 , C23C16/455
CPC分类号： C23C16/45551 , C23C16/04 , C23C16/545
摘要： A method of manufacturing a substrate with a patterned layer of deposited material, the patterned layer being deposited from a processing head, the method comprising - applying bearing gas from the processing head to keep the processing head hovering over the substrate on a gas bearing; - moving the substrate and the hovering processing head relative to each other; - applying a primer material for selective deposition of a deposition material to the substrate, the primer material being applied from a first area of a surface of the processing head that faces the substrate, and spatially patterning the primer on the substrate after or during application; - applying the deposition material to the substrate from a second area of the surface of the processing head that faces the substrate, the second area lying downstream of the first area in a direction of the movement of the substrate relative to the processing head.
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公开(公告)号：EP2334842A1
公开(公告)日：2011-06-22
申请号：EP09788288.0
申请日：2009-08-25
发明人： MAAS, Diederik Jan , VAN SOMEREN, Bob , LEXMOND, Axel Sebastiaan , SPEE, Carolus Ida Maria Antonius , DUISTERWINKEL, Antonie Ellert , VERMEER, Adrianus Johannes Petrus Maria
IPC分类号： C23C16/455
CPC分类号： C23C16/45551
摘要： Apparatus (2) for atomic layer deposition on a surface (4) of a substrate (6). The apparatus (2) includes a precursor injector head (10), the precursor injector head (10) comprising a precursor supply (12) and a deposition space (14) that in use is bounded by the precursor injector head (10) and the substrate surface (4). The precursor injector head (10) is arranged for injecting a precursor gas from the precursor supply (12) into the deposition space (14) for contacting the substrate surface (4). The apparatus (2) is arranged for relative motion between the deposition space (14) and the substrate (6) in a plane of the substrate surface (4). The apparatus (2) is provided with a confining structure (26) arranged for confining the injected precursor gas to the deposition space (14) adjacent to the substrate surface (4).
摘要翻译： 用于在基底（6）的表面（4）上进行原子层沉积的设备（2）。 所述设备（2）包括前驱体注射器头（10），所述前驱体注射器头（10）包括前驱体供应器（12）和沉积空间（14），所述沉积空间在使用中由前驱体注射器头（10） 衬底表面（4）。 前体注射头（10）被布置用于将来自前体供应（12）的前体气体注入沉积空间（14）中以接触基板表面（4）。 设备（2）被布置为在沉积空间（14）和衬底（6）之间在衬底表面（4）的平面内相对运动。 设备（2）设置有限制结构（26），该限制结构布置成用于将注入的前体气体限制到与衬底表面（4）相邻的沉积空间（14）。
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公开(公告)号：EP2670881A1
公开(公告)日：2013-12-11
申请号：EP12704561.5
申请日：2012-01-30
IPC分类号： C23C16/44 , C23C16/458 , C23C16/54 , C23C16/455 , B08B5/02
CPC分类号： B05D1/42 , C23C16/4401 , C23C16/45551 , C23C16/4583 , C23C16/54
摘要： Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed. A support part arranged opposite the injector head, the support part constructed to provide a gas bearing pressure arrangement that balances the injector head gas-bearing in the conveying plane, so that the substrate is held supportless by said gas bearing pressure arrangement in between the injector head and the support part.
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