摘要:
A production method according to an embodiment includes a formation step (S1), a first growth step (S2), a recovery step (S3), and a second growth step (S4). In the formation step (S1), a Si-C solution containing Si, Al and C is formed in a crucible. In the first growth step (S2), a seed shaft is moved down to bring a SiC seed crystal attached to the bottom edge of the seed shaft onto contact with the Si-C solution, and thereafter, an Al-doped p-type SiC single crystal is grown on the SiC seed crystal. After the first growth step (S2), the Al concentration in the Si-C solution is increased in the recovery step (S3). After the recovery step (S3), the Al-doped p-type SiC single crystal is further grown in the second growth step (S4).
摘要:
Provided is a negative electrode active material that can improve the capacity per volume and charge-discharge cycle characteristics of a nonaqueous electrolyte secondary battery represented by a lithium ion secondary battery. The negative electrode active material according to the present embodiment contains an alloy phase. The alloy phase undergoes thermoelastic diffusionless transformation when releasing or occluding metal ions. The negative electrode active material of the present embodiment is used in a nonaqueous electrolyte secondary battery. Thermoelastic diffusionless transformation refers to so-called thermoelastic martensitic transformation.
摘要:
An apparatus (10) for producing an SiC single crystal is used in the solution growth method. The apparatus (10) for producing an SiC single crystal includes a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is to be attached. The crucible (14) holds an Si-C solution (15). The seed shaft (28) includes a cylinder part (28A), a bottom part (28B), and a low heat conductive member (28C). The bottom part (28B) is located at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low heat conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than that of the bottom part (28B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.