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1.发明公开APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL 审中-公开设备用于生产单晶硅和方法生产的单晶硅
公开(公告)号：EP2876189A1
公开(公告)日：2015-05-27
申请号：EP13819242.2
申请日：2013-07-10
发明人： OKADA, Nobuhiro , KAMEI, Kazuhito , KUSUNOKI, Kazuhiko , YASHIRO, Nobuyoshi , MORIGUCHI, Koji , DAIKOKU, Hironori , KADO, Motohisa , SAKAMOTO, Hidemitsu
CPC分类号： C30B15/32 , C30B9/06 , C30B15/30 , C30B19/068 , C30B29/36 , Y10T117/1024 , Y10T117/1032
摘要： An apparatus (10) for producing an SiC single crystal is used in the solution growth method. The apparatus (10) for producing an SiC single crystal includes a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is to be attached. The crucible (14) holds an Si-C solution (15). The seed shaft (28) includes a cylinder part (28A), a bottom part (28B), and a low heat conductive member (28C). The bottom part (28B) is located at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low heat conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than that of the bottom part (28B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.
摘要翻译： 在SiC单晶制造装置（10）在溶液中的生长方法被使用。 在SiC单晶的制造坩埚装置（10）包括一个籽晶轴（28）和（14）。 籽晶轴（28）的下端表面（28S），以SiC晶种的哪个（32）被附接。 坩埚（14）保持在的Si-C溶液（15）。 籽晶轴（28）包括气缸部分（28A），一个底部（28B），和一个低导热构件（28C）。 所述底部部分（28B）位于所述筒部（28A）的下端，并具有下端表面（28S）。 该低导热构件（28C）设置在所述底部部分（28B）的上表面，并具有热传导率比所述底部部分（28B）的下端。 该制造装置可以使SiC晶种不易于变化的晶体生长表面内的温度。
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公开(公告)号：EP3192899A1
公开(公告)日：2017-07-19
申请号：EP15840329.5
申请日：2015-08-31
发明人： KUSUNOKI, Kazuhiko , KAMEI, Kazuhito , SEKI, Kazuaki , KISHIDA, Yutaka , MORIGUCHI, Koji , KAIDO, Hiroshi
摘要： A production method according to an embodiment includes a formation step (S1), a first growth step (S2), a recovery step (S3), and a second growth step (S4). In the formation step (S1), a Si-C solution containing Si, Al and C is formed in a crucible. In the first growth step (S2), a seed shaft is moved down to bring a SiC seed crystal attached to the bottom edge of the seed shaft onto contact with the Si-C solution, and thereafter, an Al-doped p-type SiC single crystal is grown on the SiC seed crystal. After the first growth step (S2), the Al concentration in the Si-C solution is increased in the recovery step (S3). After the recovery step (S3), the Al-doped p-type SiC single crystal is further grown in the second growth step (S4).
摘要翻译： 根据实施例的制造方法包括形成步骤（S1），第一生长步骤（S2），恢复步骤（S3）和第二生长步骤（S4）。 在形成步骤（S1）中，在坩埚中形成含有Si，Al和C的Si-C溶液。 在第一生长步骤（S2）中，使籽晶轴向下移动以使附着于籽晶轴的底部边缘的SiC晶种与Si-C溶液接触，然后，将Al掺杂的p型SiC 单晶在SiC籽晶上生长。 在第一生长步骤（S2）之后，回收步骤（S3）中Si-C溶液中的Al浓度增加。 在回收步骤（S3）之后，在第二生长步骤（S4）中进一步生长掺杂Al的p型SiC单晶。
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公开(公告)号：EP2889936A1
公开(公告)日：2015-07-01
申请号：EP13833607.8
申请日：2013-08-27
发明人： YAMAMOTO, Sukeyoshi , NEGI, Noriyuki , NAGATA, Tatsuo , MORIGUCHI, Koji , YONEMURA, Mitsuharu , KAKESHITA, Tomoyuki , TERAI, Tomoyuki , FUKUDA, Takashi
摘要： Provided is a negative electrode active material that can improve the capacity per volume and charge-discharge cycle characteristics of a nonaqueous electrolyte secondary battery represented by a lithium ion secondary battery. The negative electrode active material according to the present embodiment contains an alloy phase. The alloy phase undergoes thermoelastic diffusionless transformation when releasing or occluding metal ions. The negative electrode active material of the present embodiment is used in a nonaqueous electrolyte secondary battery. Thermoelastic diffusionless transformation refers to so-called thermoelastic martensitic transformation.
摘要翻译： 提供一种可以提高锂离子二次电池所代表的非水电解质二次电池的体积容量和充放电循环特性的负极活性物质。 本实施方式的负极活性物质含有合金相。 当释放或吸收金属离子时，合金相经历热弹性无扩散转变。 本实施方式的负极活性物质用于非水电解质二次电池。 热弹性无扩散变换是指所谓的热弹性马氏体转变。
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公开(公告)号：EP2876189B1
公开(公告)日：2019-03-27
申请号：EP13819242.2
申请日：2013-07-10
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