Process for depositing optical thin films on both planar and non-planar substrates
    2.
    发明公开
    Process for depositing optical thin films on both planar and non-planar substrates 失效
    上平面和非平面基片施加薄的光学层的方法。

    公开(公告)号:EP0409451A1

    公开(公告)日:1991-01-23

    申请号:EP90307396.3

    申请日:1990-07-06

    IPC分类号: C23C14/56 C23C14/50 C23C14/58

    摘要: A rotary cylindrical sputtering system (10) incorporates separate, separately-controlled linear magnetron sputter deposition and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. In one aspect, the associated process involves rotating or translating workpieces (15) past the differentially pumped (12), atmospherically separated, sequentially or simultaneously operated deposition and reaction zones (30) and is characterized by the ability to form a wide range of materials, by high throughput, and by the ability to form durable optical quality thin films of nominal refractive indices and controlled coating thickness, including both constant and selectively varied thickness profiles.

    摘要翻译: 一种旋转圆筒形溅射系统(10)结合了用于溅射沉积的材料分开,单独地控制的线性磁控溅射沉积和反应区:如难熔金属和形成氧化物和其它化合物,谋求材料的合金。 在一个方面中,相关联的过程包括旋转或平移工件(15)经过所述差动泵送(12),在大气中分离,顺序地或同时操作的沉积和反应区(30),并且通过以形成宽范围的材料的能力为特征的 通过高通量,并且通过以形成标称折射率和控制涂层厚度,包括恒定的并且选择性地改变厚度轮廓的耐用的光学质量的薄膜的能力。

    Magnetron sputtering apparatus and process
    4.
    发明公开
    Magnetron sputtering apparatus and process 失效
    Magnetronzerstäubungsanlageund -verfahren。

    公开(公告)号:EP0655515A1

    公开(公告)日:1995-05-31

    申请号:EP95101758.1

    申请日:1989-01-19

    摘要: A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.

    摘要翻译: 公开了一种溅射涂覆系统(10),包括:真空室; 安装在所述真空室(11)内并适于安装其上的衬底(15)的可移动衬底支撑件,用于使衬底移动通过至少第一和第二物理间隔的工位(30); 位于所述第一工作站(26)处并包括所选材料的靶的线性磁控管增强溅射装置和用于在所述装置内并且邻近所述工作站并且基本上遍及所述腔室的延伸区域产生相关等离子体的装置,包括物理 用于在穿过所述第一工作站的所述衬底(15)上溅射沉积材料; 以及位于所述第二工作站(28)处并且适于使用来自与所述溅射装置相关联的所述等离子体的电子的离子源装置,并且沿邻近所述衬底支撑件的相对较窄的区域施加反应性气体以形成包含所述反应性离子的离子的第二等离子体 气体,所述离子源装置还包括用于在所述离子源和与所述溅射装置相关联的所述等离子体之间施加有向电位的装置,用于将所述反应离子加速至所述衬底,以用溅射沉积材料进行所选择的反应。

    Magnetron sputtering apparatus and process
    7.
    发明公开
    Magnetron sputtering apparatus and process 失效
    MAGNETRON喷溅设备和工艺

    公开(公告)号:EP0328257A3

    公开(公告)日:1990-10-31

    申请号:EP89300521.5

    申请日:1989-01-19

    摘要: A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.