摘要:
A rotary cylindrical sputtering system (10) incorporates separate, separately-controlled linear magnetron sputter deposition and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. In one aspect, the associated process involves rotating or translating workpieces (15) past the differentially pumped (12), atmospherically separated, sequentially or simultaneously operated deposition and reaction zones (30) and is characterized by the ability to form a wide range of materials, by high throughput, and by the ability to form durable optical quality thin films of nominal refractive indices and controlled coating thickness, including both constant and selectively varied thickness profiles.
摘要:
A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.
摘要:
The disclosures relates to a thin film coating system (10) incorporates separate, separately-controlled deposition and reaction zones for depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separate, sequentially or simultaneously operated deposition and reaction zones and is characterised by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.
摘要:
A sputter coating system (10) is disclosed comprising: a vacuum chamber; a movable substrate support mounted within said vacuum chamber (11) and adapted for mounting substrates (15) thereon for moving the substrates past at least first and second physically spaced work stations (30); a linear magnetron-enhanced sputter device positioned at said first work station (26) and including a target of selected material and means for generating an associated plasma within said device and adjacent said work station and substantially throughout an extended region of the chamber including the physically spaced second work station, for sputter depositing material on said substrates (15) traversing the first work station; and an ion source device positioned at said second work station (28) and adapted for using electrons from said plasma associated with said sputter device and applying reactive gas to form along a relatively narrow zone adjacent the substrate support a second plasma comprising ions of the reactive gas, the ion source device further comprising means for applying a directed potential between said ion source and said plasma associated with said sputter device for accelerating the reactive ions to the substrates for effecting a selected reaction with the sputter-deposited material.
摘要:
The disclosures relates to a thin film coating system (10) incorporates separate, separately-controlled deposition and reaction zones for depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separate, sequentially or simultaneously operated deposition and reaction zones and is characterised by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.
摘要:
The disclosures relates to a thin film coating system (10) incorporates separate, separately-controlled deposition and reaction zones for depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separate, sequentially or simultaneously operated deposition and reaction zones and is characterised by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.