摘要:
The present invention refers to a tool for fixing a substrate with a satellite in a PVD process. The tool for fixing the substrate (7) with the satellite (6) in a PVD process to perform at least two circular axial turning motions and to work with different strength/ squeeze grades for getting better coating efficiency. The tool preferably comprises of a clamp (16), at least two connecting means and a forcing structure (17). The clamp (16) may include at least two connection pins and a head. The forcing structure (17) can be provided to control a squeeze force on the substrate (7). The connection pins of the clamp (16) can be fixed in non-coaxial axis holes (12, 13) that may be provided in the connecting means thereby making squeeze force on the substrate (7) for coating. One end of the forcing structure (17) can be connected to the connecting means and another end may be connected to the satellite (6).
摘要:
A method for using a fixture system and a fixture system for holding workpieces or parts to be treated by a plasma assisted vacuum process, the fixture system including magnetic means which generate a magnetic field with a magnetic force which is high enough for holding the workpiece or part. The magnetic means of the fixture system are designed and arranged in such a manner that magnetic field lines of the generated magnetic field are largely confined to the space including the fixture system and the body of the workpiece or part, so that a generation of unintended plasma inhomogeneities caused by the magnetic field lines is avoided.
摘要:
A surface-coated cutting tool includes a tool body and a hard coating layer including a lower layer and an upper layer. The lower layer is made of a complex nitride layer of Al, Ti, and Si with the thickness of 0.3 to 3.0 µm. It satisfies 0.3 ≤ α ≤ 0.5 and 0.01 ≤ β ≤ 0.10 (atomic ratio) being expressed by (Al 1-α-β Ti α Si β )N. The upper layer is made of a complex nitride layer of Al, Cr, Si, and Cu with the thickness of 0.5 to 5.0 µm. It satisfies 0.15 ≤ a ≤ 0.40, 0.05 ≤ b ≤ 0.20, and 0.005 ≤ c ≤ 0.05 (atomic ratio) being expressed by (Al 1-a-b-c Cr a Si b Cu c )N. The upper layer is made of crystals having a hexagonal structure, and a half width of a diffraction peak of a (110) plane present in a range of 2θ = 55° to 65° is 1.0° to 3.5°.
摘要:
A device, a method and a use for the coating of lenses are proposed, the lenses that are to be coated being arranged in pairs over parallel tubular targets in such a way that they respectively cover both a homogeneous depositing region and an inhomogeneous depositing region of the target and the lenses rotating, and so a particularly uniform coating is achievable.
摘要:
An apparatus for coating substrates includes a vacuum chamber having an opening through which substrates can be received and a door configured to seal the opening; one or more targets arranged in the vacuum chamber; a cooling unit configured to cool the substrates and/or a heating unit configured to heat the substrates; rotating means configured to rotate substrates relative to the one or more targets, the cooling unit and/or the heating unit; and a lifting chamber that communicates with the interior of the vacuum chamber and is configured to receive the cooling unit and the heating unit. The vacuum chamber defines a lifting axis along which the cooling unit and/or the heating unit and the lifting chamber are arranged, and the apparatus further comprises displacement means configured to displace the cooling unit and/or the heating unit along the lifting axis and between the vacuum chamber and the lifting chamber.
摘要:
Provided is a tool for machining in which defective adhesion of a coating film at an interface of a layer containing titanium and an alumina layer is prevented. A method for producing a tool for machining is provided in which a coating film of a plurality of layers is formed on a surface of a base material (21) by physical vapor deposition (PVD), the method including: a first layer formation step of forming a first layer (22) containing a nitride or carbide of titanium on the surface of the base material (21); a first barrier layer formation step of forming a barrier layer (23) that covers a surface of the first layer (22); and a second layer formation step of forming a second layer (24) containing aluminum oxide on a surface of the barrier layer (23).
摘要:
A deposition apparatus comprises: an infeed chamber (28; 28-1); a preheat chamber (30; 30-1); a deposition chamber (26; 26-1); and optionally at least one of a cooldown chamber (34) and an outlet chamber (38). At least a first of the preheat chamber and the cooldown chamber contains a buffer system (60; 60-1; 60-2) for buffering workpieces respectively passing to or from the deposition chamber.
摘要:
A system and method for fabricating a perovskite film is provided, the system including a substrate stage configured to rotate around its central axis at a rotation speed, a first set of evaporation units, each coupled to the side section or the bottom section of the chamber, a second set of evaporation units coupled to the bottom section, and a shield defining two or more zones having respective horizontal cross-sectional areas, which are open and facing the substrate, designated for the two or more evaporation units in the second set. The resultant perovskite film includes multiple unit layers, wherein each unit layer is formed by one rotation of the substrate stage, and the composition and thickness of the unit layer are controlled by adjusting at least the evaporation rates, the rotation speed and the horizontal cross-sectional areas.
摘要:
Provided are: a hard lubricating coating film which is hard and has wear resistance; and a hard lubricating coating film-covered tool. A hard coating film (10), which is hard and has wear resistance, and an end mill (12) can be obtained by alternately forming two or more (CraMobWcVdBe)1-x-yCxNy layers A (22) and two or more (CraMobWcVdBe)1-x-y-zCxNyOz layers B (24) by controlling the composition ratios of Cr, Mo, W, V and B and various reaction gases during the film formation, or alternatively by controlling only the various reaction gases during the film formation. In this connection, the atomic ratios a-e, y and (x + y) of the layers A (22) are within predetermined ranges; the atomic ratios a-e, x, y, z and (x + y + z) of the layers B (24) are within predetermined ranges; the film thickness (D1) of the layers A (22) is within the range from 2 nm to 1,000 nm (inclusive); the film thickness (D2) of the layers B (24) is within the range from 2 nm to 500 nm (inclusive); and the total film thickness (D) is within the range from 0.1 µm to 10.0 µm (inclusive).