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公开(公告)号：EP2890835A1
公开(公告)日：2015-07-08
申请号：EP13777342.0
申请日：2013-08-29
CPC分类号： H01L21/0254 , C30B25/06 , C30B25/186 , C30B29/403 , H01L21/02381 , H01L21/02433 , H01L21/02491 , H01L21/02631 , H01L21/02661 , H01L21/3065
摘要： A method for depositing an aluminium nitride layer on a substrate is provided that comprises: providing a silicon substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; depositing an aluminum film onto the conditioned surface of the substrate by a sputtering method under an atmosphere of Argon and depositing an epitaxial aluminium nitride layer on the aluminum film by a sputtering method under an atmosphere of Nitrogen and Argon.
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公开(公告)号：EP2862198A1
公开(公告)日：2015-04-22
申请号：EP13739811.1
申请日：2013-06-14
IPC分类号： H01L21/20 , H01L21/02 , H01L21/3065
CPC分类号： H01L21/02658 , C23C14/022 , C23C14/0617 , C23C14/541 , C30B23/063 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02631 , H01L21/02661
摘要： A method for depositing a Group III nitride semiconductor film on a substrate is provided that comprises: providing a sapphire substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; holding the substrate away from a substrate facing surface of a heater by a predetermined distance; heating the substrate to a temperature by using the heater whilst the substrate is held away from the substrate facing surface of the heater, and depositing a Group III nitride semiconductor film onto the conditioned surface of the substrate by a physical vapour deposition method whilst the substrate is held away from the substrate facing surface of the heater and forming an epitaxial Group III nitride semiconductor film with N-face polarity on the conditioned surface of the substrate.
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