利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

28 条记录 (耗时 0.011 秒)

    DIELECTRIC FILM FORMATION DEVICE AND DIELECTRIC FILM FORMATION METHOD
    7.
    发明公开
    DIELECTRIC FILM FORMATION DEVICE AND DIELECTRIC FILM FORMATION METHOD 审中-公开
    器件的形成介电薄膜和方法用于形成介电薄膜的

    公开(公告)号：EP2626442A4

    公开(公告)日：2017-01-04

    申请号：EP11830637

    申请日：2011-10-03

    申请人： ULVAC INC

    发明人： KIMURA ISAO ,  JINBO TAKEHITO ,  KOBAYASHI HIROKI ,  ENDOU YOUHEI ,  OONISHI YOUHEI

    IPC分类号： C23C14/34 ,  C23C14/02 ,  C23C14/08 ,  C23C14/35 ,  C30B23/00 ,  C30B23/02 ,  C30B23/06 ,  C30B29/32

    CPC分类号： C23C14/3464 ,  C23C14/024 ,  C23C14/088 ,  C23C14/35 ,  C30B23/002 ,  C30B23/025 ,  C30B23/063 ,  C30B29/32

    摘要： A dielectric film forming apparatus and a method for forming a dielectric film so as to form a dielectric film with a (100) / (001) orientation. A dielectric film forming apparatus 10 includes a deposition preventive plate heating portion 19 that heats a deposition preventive plate 34 disposed in a position where particles discharged from a target 21 adhere. Sputtering gas is introduced from a sputtering gas introduction unit 14 into a vacuum chamber 11. The deposition preventive plate 34 is heated to a temperature higher than a film forming temperature so as to emit vapor from a thin film adhered to the deposition preventive plate 34. After a seed layer is formed on a substrate 31, the substrate 31 is heated to the film forming temperature, and AC voltage is applied to the target 21 from a power supply 13 and then, the target 21 is sputtered so as to form a dielectric film on the substrate 31.

    摘要翻译： 一种电介质成膜装置和用于形成电介质膜，从而形成介电膜，具有（100）/（001）取向的方法。 一种电介质成膜装置10包括防附着板加热部19个加热做了防附着板34在从目标21附着排出颗粒的位置处。 溅射气体从溅射气体导入部14导入到真空室11的防附着板34被加热到比成形温度，以便从附着在防附着板34的薄膜发射蒸气的膜更高的温度下 一个籽晶层上的基板31形成之后，基板31被加热到成膜温度，和AC电压从电源13施加到目标21，然后，靶21被溅射，以便形成电介质 电影在基板31日

    SILICON CARBIDE SINGLE CRYSTAL WAFER AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL INGOT
    8.
    发明公开
    SILICON CARBIDE SINGLE CRYSTAL WAFER AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL INGOT 审中-公开
    单晶硅晶片及其制备单晶的硅块的方法

    公开(公告)号：EP3026147A1

    公开(公告)日：2016-06-01

    申请号：EP14877562.0

    申请日：2014-09-30

    申请人： Nippon Steel & Sumikin Materials Co., Ltd.

    发明人： NAKABAYASHI Masashi ,  SHIMOMURA Kota ,  NAGAHATA Yukio ,  KOJIMA Kiyoshi

    IPC分类号： C30B29/36 ,  C30B23/06

    CPC分类号： C30B23/063 ,  C30B23/025 ,  C30B23/06 ,  C30B29/36 ,  H01L29/1608 ,  H01L29/32

    摘要： Provided is a SiC single crystal wafer, which is manufactured from a SiC single crystal ingot grown by the sublimation-recrystallization method , and which brings about high device performance and high device manufacture yield when used as a wafer for manufacturing a device. The SiC single crystal wafer has, in a surface thereof, a basal plane dislocation density of 1,000 dislocations per cm 2 or less, a threading screw dislocation density of 500 dislocations per cm 2 or less, and a Raman index of 0.2 or less. Further provided is a method of manufacturing a SiC single crystal ingot, including controlling heat input from a side surface of the single crystal ingot during growth of a single crystal, to thereby grow the crystal while changes in the temperature distribution of the single crystal ingot are reduced.

    摘要翻译： 本发明提供一种SiC单晶晶片，所有这一切都从由升华再结晶法生长SiC单晶锭制造，并且这带来高器件性能和高器件成品率制造在作为用于制造器件的晶片使用。 该SiC单晶晶片具有在其表面中，每平方厘米2或更小的位错1000基底面位错密度，每cm 2以下的位错500的螺纹螺旋位错密度，和0.2或更小的拉曼索引。 进一步提供了一种制造SiC单晶锭，其中包括一个单晶的生长过程中从单晶锭的侧面上的控制热输入，从而使晶体生长，而在单晶锭的温度分布的变化是一个方法 降低。