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1.发明公开
公开(公告)号：EP3077566A1
公开(公告)日：2016-10-12
申请号：EP14811797.1
申请日：2014-12-03
发明人： WEICHART, Jürgen
CPC分类号： C23C14/046 , C23C14/165 , C23C14/3407 , C23C14/3485 , C23C14/3492 , C23C14/352 , H01J37/3405 , H01J37/3417 , H01J37/3423 , H01J37/3438 , H01J37/3467 , H01J37/3497 , H01L21/2855 , H01L21/76873 , H01L21/76898
摘要： For coating substrates (S) having along their surfaces to be coated high aspect ratio vias, a sputtering system has a sputtering source arrangement, which includes a first DC pulse operated magnetron sub-source (1203) and a second frame-shaped magnetron sub-source (1213) which latter is arranged, in the system, between the substrate (S) and the first magnetron sub-source (1203). The second magnetron sub-source (1213) may be operated in DC, pulsed DC, thereby also HIPIMS mode. The first magnetron sub-source (1203) is advantageously also operated in HIPIMS mode. The substrate (S) is biased by an Rf power source (1253).
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2.发明公开METHOD FOR FILLING VIAS AND SUBSTRATE-VIA FILLING VACUUM PROCESSING SYSTEM 审中-公开程序对填充孔接触和真空处理系统填补衬底的接触孔
公开(公告)号：EP2999805A1
公开(公告)日：2016-03-30
申请号：EP14725708.3
申请日：2014-05-23
IPC分类号： C23C14/04
CPC分类号： C23C14/34 , C23C14/022 , C23C14/046 , C23C14/0623 , C23C14/3407 , C23C14/5826 , C23C14/5873 , C23F4/00 , H01J37/32431 , H01J37/3429 , H01J37/3476
摘要： Vias of at least approx. 1:1 aspect ratio in substrates are filled with material which exhibits a thermally driven amorphous/crystalline phase change. This is performed within a vacuum process chamber (50a). During a first timespan the material is sputter-deposited by DC sputtering from a material target (60). In a subsequent timespan a void, which may remain in the via as material covered by the addressed sputtering, is opened by means of etching performed with the help of an inductively coupled plasma generated by an Rf driven electric coil (40) and applying to the substrate (52) with the via an Rf bias.
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公开(公告)号：EP2867386A1
公开(公告)日：2015-05-06
申请号：EP13732518.9
申请日：2013-06-28
CPC分类号： C23C14/3485 , C23C14/0629 , C23C14/3407 , C23C14/345 , H01J37/3467
摘要： The present invention concerns a method of pulsed bipolar sputtering, the method comprising the steps of: - applying a sputtering pulse (-) during a first period of time (T-) / and - applying a revers voltage pulse during a subsequent second period of time (T+). The step of applying the revers voltage pulse comprises controlling, in particular adjusting, the timing of the revers voltage pulse (T+). This way high quality sputtering is achieved, in particular for sputtering temperature sensitive materials.
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公开(公告)号：EP1118095B1
公开(公告)日：2015-02-25
申请号：EP99939301.0
申请日：1999-08-30
发明人： WEICHART, Jürgen
IPC分类号： H01J37/32
CPC分类号： H01J37/321
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公开(公告)号：EP2382648B1
公开(公告)日：2016-10-05
申请号：EP09805942.1
申请日：2009-12-21
发明人： WEICHART, Jürgen , FELZER, Heinz
CPC分类号： H01J37/34 , H01J37/32541 , H01J37/3408 , H01J37/3438
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6.发明授权ARC SUPPRESSION AND PULSING IN HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS) 有权消弧线和脉冲HIPIMS（高功率脉冲磁控溅射）
公开(公告)号：EP2102888B1
公开(公告)日：2015-07-29
申请号：EP07857450.6
申请日：2007-12-12
IPC分类号： H01J37/34
CPC分类号： C23C14/3485 , C23C14/35 , H01J37/32944 , H01J37/3408 , H01J37/3444 , H01J37/3467
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7.发明公开
公开(公告)号：EP2861777A1
公开(公告)日：2015-04-22
申请号：EP13729390.8
申请日：2013-06-18
发明人： WEICHART, Jürgen
CPC分类号： C23C14/3492 , C23C14/34 , C23C14/35 , C23C14/505 , H01J37/3423
摘要： The present invention is related to directional material deposition in physical vapor deposition (PVD) technology. In particular, the invention concerns PVD apparatus, which comprises : - a vacuum tight outer vessel accommodating a material source, - at least two substrates arranged to define a substrate plane spaced apart from said material source, - said substrates facing the material source with a surface to be treated. The diameter of this material source is smaller, in particular significantly smaller, than the diameter of any of the substrates. This way a narrow angular distribution and a high level of uniformity is achieved at low substrate temperature.
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