专利检索 ap:("PANASONIC CORP") AND inv:"YOKOGAWA TOSHIYA" 第 1 页

1.

发明公开
NITROGEN-BASED SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：半导体元件生产氮基和过程

公开(公告)号：EP2352184A4

公开(公告)日：2012-11-14

申请号：EP10758191

申请日：2010-03-17

申请人： PANASONIC CORP

发明人： OYA MITSUAKI , YOKOGAWA TOSHIYA , YAMADA ATSUSHI , ISOZAKI AKIHIRO

IPC分类号： H01L33/32 , H01L21/28 , H01L33/40

CPC分类号： H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40

2.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME 审中-公开

公开(公告)号：EP2273573A4

公开(公告)日：2012-11-14

申请号：EP10750561

申请日：2010-03-09

申请人： PANASONIC CORP

发明人： OYA MITSUAKI , YOKOGAWA TOSHIYA , YAMADA ATSUSHI , KATA RYOU

IPC分类号： H01L33/32 , H01L21/28 , H01L29/04 , H01L29/20 , H01L29/45 , H01L33/16 , H01L33/40

CPC分类号： H01L33/40 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341

3.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 审中-公开

公开(公告)号：EP2555258A4

公开(公告)日：2013-11-06

申请号：EP11765192

申请日：2011-03-15

申请人： PANASONIC CORP

发明人： YOKOGAWA TOSHIYA , OYA MITSUAKI , YAMADA ATSUSHI , ISOZAKI AKIHIRO

IPC分类号： H01L33/32 , H01L33/16 , H01L33/40 , H01S5/042 , H01S5/32 , H01S5/323 , H01S5/343

CPC分类号： H01L21/02579 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L23/53247 , H01L33/0075 , H01L33/16 , H01L33/32 , H01L33/40 , H01L2224/13 , H01L2924/12032 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341 , H01L2924/00

摘要： A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m -plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an Al x In y Ga z N (where x+y+z=1, x‰¥0, y‰¥0, and z‰¥0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.

4.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译： NITRIDHALBLEITERELEMENT及其制造方法

公开(公告)号：EP2541624A4

公开(公告)日：2013-05-15

申请号：EP11765181

申请日：2011-02-23

申请人： PANASONIC CORP

发明人： YOKOGAWA TOSHIYA , OYA MITSUAKI , YAMADA ATSUSHI , KATO RYOU

IPC分类号： H01L33/32 , H01L21/28 , H01L33/40 , H01S5/042 , H01S5/343

CPC分类号： H01L33/40 , B82Y20/00 , H01L29/045 , H01L33/0075 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/32341

5.

发明公开
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件基于氮化镓系化合物

公开(公告)号：EP2472607A4

公开(公告)日：2014-08-13

申请号：EP10811444

申请日：2010-08-03

申请人： PANASONIC CORP

发明人： KATO RYOU , FUJIKANE MASAKI , INOUE AKIRA , YOKOGAWA TOSHIYA

IPC分类号： H01L33/32

CPC分类号： H01L33/325 , H01L33/0075 , H01L33/02 , H01L33/14 , H01L33/18

摘要： Provided is a gallium nitride-based compound semiconductor light-emitting element, in which the concentration of Mg which is a p-type dopant in a p-GaN layer in which the (10-10) m -plane of a hexagonal wurtzite structure grows is adjusted in a range from 1.0×10 18 cm -3 to 9.0×10 18 cm -3 .

6.

发明公开
STRUCTURE FOR GROWTH OF NITRIDE SEMICONDUCTOR LAYER, STACKED STRUCTURE, NITRIDE-BASED SEMICONDUCTOR ELEMENT, LIGHT SOURCE, AND MANUFACTURING METHOD FOR SAME 审中-公开
标题翻译：结构生长的氮化物半导体层层压结构制作，半导体元件的氮化物，光源和过程

公开(公告)号：EP2701183A4

公开(公告)日：2014-07-30

申请号：EP12821910

申请日：2012-08-03

申请人： PANASONIC CORP

发明人： CHOE SONGBAEK , YOKOGAWA TOSHIYA , INOUE AKIRA , YAMADA ATSUSHI

IPC分类号： H01L33/00 , H01L33/12 , H01L33/16 , H01L33/20 , H01L33/32

CPC分类号： H01L33/18 , C30B25/04 , C30B25/18 , C30B29/403 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L21/20 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/20 , H01L33/32 , H01L33/58 , H01L2224/14 , H01L2224/16225

7.

发明公开
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件基于氮化镓系化合物

公开(公告)号：EP2461376A4

公开(公告)日：2013-03-13

申请号：EP10829650

申请日：2010-07-07

申请人： PANASONIC CORP

发明人： KATO RYOU , YOSHIDA SHUNJI , YOKOGAWA TOSHIYA

IPC分类号： H01L33/16 , H01L21/02 , H01L21/205 , H01L33/00 , H01L33/06 , H01L33/32

CPC分类号： H01L21/0262 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L33/007 , H01L33/06 , H01L33/18 , H01L33/325

8.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译： NESSRIDHALBLEITERELEMENT UND HERSTELLUGSVERFAHRENDAFÜR

公开(公告)号：EP2479807A4

公开(公告)日：2012-10-24

申请号：EP10838943

申请日：2010-12-21

申请人： PANASONIC CORP

发明人： YOKOGAWA TOSHIYA , OYA MITSUAKI , YAMADA ATSUSHI , KATO RYOU

IPC分类号： H01L33/40 , H01L33/16 , H01L33/32

CPC分类号： H01L33/32 , H01L33/16 , H01L33/40 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , Y10T436/112499 , H01L2924/00012

9.

发明公开
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体元件及其制造方法

公开(公告)号：EP2226853A4

公开(公告)日：2012-05-02

申请号：EP09815447

申请日：2009-06-04

申请人： PANASONIC CORP

发明人： YOKOGAWA TOSHIYA , OYA MITSUAKI , YAMADA ATSUSHI , KATO RYOU

IPC分类号： H01L33/40

CPC分类号： H01L33/32 , H01L29/2003 , H01L33/0095 , H01L33/16 , H01L33/30 , H01L33/40 , H01L33/44 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , H01L2924/00012

10.

发明公开
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ILLUMINATING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING ILLUMINATING DEVICE 审中-公开
标题翻译：氮化物半导体发光元件，照明装置，液晶显示装置，制造方法的氮化物半导体的发光元件及其制造方法的照明装置

公开(公告)号：EP2418696A4

公开(公告)日：2014-02-19

申请号：EP09842932

申请日：2009-07-09

申请人： PANASONIC CORP

发明人： YOKOGAWA TOSHIYA , INOUE AKIRA , FUJIKANE MASAKI , OYA MITSUAKI , YAMADA ATSUSHI , YANO TADASHI

IPC分类号： H01L25/075 , H01L33/16 , H01L33/32

CPC分类号： H01L25/0753 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00