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公开(公告)号：EP1451890A2
公开(公告)日：2004-09-01
申请号：EP02800982.7
申请日：2002-10-10
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
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公开(公告)号：EP1774620B1
公开(公告)日：2014-10-01
申请号：EP05763216.8
申请日：2005-06-23
CPC分类号： H04B1/48 , H01L27/0248 , H01Q23/00 , H03F1/0205 , H03F1/56 , H03F1/565 , H03F3/19 , H03F3/21 , H03F2200/387 , H03F2200/451 , H03G3/3042 , H03G11/00 , H04B1/0053 , H04B1/0475 , H04L27/04
摘要： A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.
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公开(公告)号：EP1774620A1
公开(公告)日：2007-04-18
申请号：EP05763216.8
申请日：2005-06-23
IPC分类号： H01Q11/12
CPC分类号： H04B1/48 , H01L27/0248 , H01Q23/00 , H03F1/0205 , H03F1/56 , H03F1/565 , H03F3/19 , H03F3/21 , H03F2200/387 , H03F2200/451 , H03G3/3042 , H03G11/00 , H04B1/0053 , H04B1/0475 , H04L27/04
摘要： A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.
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公开(公告)号：EP1451890B2
公开(公告)日：2015-09-23
申请号：EP02800982.7
申请日：2002-10-10
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
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公开(公告)号：EP1664966B1
公开(公告)日：2014-07-30
申请号：EP04816848.8
申请日：2004-09-07
IPC分类号： H02M3/07
CPC分类号： H03K3/013 , H02M3/07 , H02M3/073 , H03K3/0315
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公开(公告)号：EP1451890B1
公开(公告)日：2011-02-02
申请号：EP02800982.7
申请日：2002-10-10
CPC分类号： H03K17/6871 , H01P1/15 , H03K17/063 , H03K17/102 , H03K17/693 , H03K19/018521 , H03K19/0944 , H03K2017/0803 , H04B1/40
摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
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公开(公告)号：EP1664966A2
公开(公告)日：2006-06-07
申请号：EP04816848.8
申请日：2004-09-07
IPC分类号： G05F3/02
CPC分类号： H03K3/013 , H02M3/07 , H02M3/073 , H03K3/0315
摘要： A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A singlephase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.
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公开(公告)号：EP1396013A2
公开(公告)日：2004-03-10
申请号：EP02747835.3
申请日：2002-05-15
发明人： POMMER, Richard, J. , KUZNIA, Charles, B. , LE, Tri, Q. , HAGAN, Richard, T. , REEDY, Ronald, E. , CABLE, James, S. , ALBARES, Donald, J. , MISCIONE, A., Mark
CPC分类号： G02B6/4277 , G02B6/4201 , G02B6/4204 , G02B6/4212 , G02B6/4224 , G02B6/4231 , G02B6/4232 , G02B6/4246 , G02B6/4249 , G02B6/4259 , G02B6/426 , G02B6/4266 , G02B6/4269 , G02B6/4281 , G02B6/4286 , G02B6/4292
摘要： Integrated circuit/optoelectronic packaging system (100) which comprises OE and IC components packaged to provide electrical input/output using electrical connections (82, 83), thermal management using a heat sink (105), an optical window using a transparent insulating substrate (17), and precise passive or mechanical alignment using guide pins (72) to external optical receivers or transmitters (not shown). A transparent insulating substrate (17) having electrical circuitry (88) in a thin silicon layer formed on its top side is positioned between the optical fiber and the optoelectonic device (203) such that an optical path is described between the optoelectronic device and the optical fiber core through the transparent insulating substrate (17). Arrays of fibers (not shown) may be coupled to arrays of optoelectronic devices (203) through a single transparent substrate (17). The optoelectronic devices (203) are mounted on the transparent insulating substrate (17) in a precise positional relationship to guide holes in the substrate.
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