公开(公告)号：EP2387094B1

公开(公告)日：2016-05-04

申请号：EP10011669.8

申请日：2002-10-10

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Burgener, Mark L. ,  Cable, James, S.

IPC分类号： H01P1/15 ,  H03K17/60

CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

公开(公告)号：EP1451890B2

公开(公告)日：2015-09-23

申请号：EP02800982.7

申请日：2002-10-10

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： BURGENER, Mark, L. ,  CABLE, James, S.

IPC分类号： H01P1/15 ,  H03K17/60

CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

公开(公告)号：EP2053747A1

公开(公告)日：2009-04-29

申请号：EP08166985.5

申请日：2008-10-24

申请人： Honeywell International Inc.

发明人： Erstad, David O.

IPC分类号： H03K19/003 ,  H03K19/007 ,  G11C29/00 ,  H01L23/552 ,  G05F3/30

CPC分类号： H03K19/0033 ,  G11C29/02 ,  G11C29/021 ,  H01L2924/0002 ,  H03K19/0075 ,  H03K2017/0803 ,  H01L2924/00

摘要： A system and method for extending the operating life of a device susceptible to defects caused by total ionizing dose radiation and/or bias dependent degradation are described. The device is replicated at least once and at least one switching mechanism is used to cycle between the devices such that only one device is operating normally. While the first device is operating normally, the other devices are biased. The bias condition may slow, eliminate, or even reverse device shifts that occur due to total ionizing dose radiation or bias effects.

摘要翻译： 描述了用于延长由总电离剂量辐射和/或偏置依赖性降解引起的缺陷敏感的装置的使用寿命的系统和方法。 该设备至少复制一次，并且使用至少一个切换机构在设备之间循环，使得仅一个设备正常运行。 当第一个设备正常运行时，其他设备有偏差。 偏置条件可能会减慢，消除甚至反转由于总电离剂量辐射或偏置效应而发生的器件偏移。

公开(公告)号：EP1328075A2

公开(公告)日：2003-07-16

申请号：EP03000434.5

申请日：2003-01-10

申请人： TRW INC.

发明人： DiCamillo, Nicholas F. ,  Franzen, Daniel R. ,  Lane, Daniel R. ,  Park, Young C.

IPC分类号： H04B7/185

CPC分类号： H04B7/18515 ,  H03K2017/0803

摘要： A redundancy network is provided that may include a first unit having first unit primary components and first unit redundant components, and a second unit (coupled to the first unit) having second unit primary components and second unit redundant components. A signal may pass through the first unit primary components and through the second unit primary components based on a first control signal and pass through the first unit redundant components and through the second unit redundant components based on a second control signal.

摘要翻译： 提供冗余网络，其可以包括具有第一单元主要组件和第一单元冗余组件的第一单元以及具有第二单元主要组件和第二单元冗余组件的第二单元（耦合到第一单元）。 信号可以基于第一控制信号通过第一单元主要组件并通过第二单元主要组件，并且基于第二控制信号通过第一单元冗余组件并通过第二单元冗余组件。

公开(公告)号：EP3113280A1

公开(公告)日：2017-01-04

申请号：EP16020116.6

申请日：2002-10-10

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Burgener, Mark, L. ,  Cable, James, S.

IPC分类号： H01P1/15 ,  H03K17/06 ,  H03K17/10 ,  H03K17/693 ,  H03K17/687 ,  H03K19/0185 ,  H03K19/0944 ,  H03K17/08

CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

摘要翻译： 描述了用于切换RF信号的新颖RF开关电路和方法。 RF开关电路采用绝缘体上硅（SOI）技术制造。 RF开关包括用于交替地将RF输入信号耦合到公共RF模式的开关和分流晶体管分组对。 开关和分流晶体管分组对由开关控制电压（SW）及其反相（SW）控制。 开关和分流晶体管组包括以“堆叠”或串联配置连接在一起的一个或多个MOSFET晶体管。 晶体管分组器件和相关的栅极电阻的堆叠增加了串联连接的开关晶体管的击穿电压，并且可以提高RF开关压缩。 描述了完全集成的RF开关，其包括与RF开关元件集成在一起的数字控制逻辑和负电压发生器。 在一个实施例中，完全集成的RF开关包括内置振荡器，电荷泵电路，CMOS逻辑电路，电平移位和分压器电路以及RF缓冲电路。 描述电荷泵，电平移位分压器和RF缓冲器电路的几个实施例。 本发明的RF开关提供插入损耗，开关隔离和开关压缩方面的改进。

公开(公告)号：EP2387094A1

公开(公告)日：2011-11-16

申请号：EP10011669.8

申请日：2002-10-10

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： Burgener, Mark L. ,  Cable, James, S.

IPC分类号： H01P1/15 ,  H03K17/60

CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

摘要翻译： 描述了用于切换RF信号的新颖RF开关电路和方法。 RF开关电路采用绝缘体上硅（SOI）技术制造。 RF开关包括用于交替地将RF输入信号耦合到公共RF模式的开关和分流晶体管分组对。 开关和分流晶体管分组对由开关控制电压（SW）及其反相（SW）控制。 开关和分流晶体管组包括以“堆叠”或串联配置连接在一起的一个或多个MOSFET晶体管。 晶体管分组器件和相关的栅极电阻的堆叠增加了串联连接的开关晶体管的击穿电压，并且可以提高RF开关压缩。 描述了完全集成的RF开关，其包括与RF开关元件集成在一起的数字控制逻辑和负电压发生器。 在一个实施例中，完全集成的RF开关包括内置振荡器，电荷泵电路，CMOS逻辑电路，电平移位和分压器电路以及RF缓冲电路。 描述电荷泵，电平移位分压器和RF缓冲器电路的几个实施例。 本发明的RF开关提供插入损耗，开关隔离和开关压缩方面的改进。

公开(公告)号：EP1451890A2

公开(公告)日：2004-09-01

申请号：EP02800982.7

申请日：2002-10-10

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： BURGENER, Mark, L. ,  CABLE, James, S.

IPC分类号： H01P1/15 ,  H03K17/60

CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

公开(公告)号：EP2923893A1

公开(公告)日：2015-09-30

申请号：EP13856698.9

申请日：2013-11-25

申请人： Yazaki Corporation

发明人： SUZUKI, Masashi

IPC分类号： B60R16/02

CPC分类号： H03K17/145 ,  B60R16/0239 ,  H03K17/94 ,  H03K2017/0803

摘要： Provided is an electronic control device capable of preventing all of semiconductor relays from being forcibly controlled to be opened by a self-protection shutoff function. An electronic control device (E) controls semiconductor relays (D1-Dn) provided in a load control unit (U), which correspond to loads (L1-Ln) mounted in an automobile. The electronic control device includes a temperature measuring means (P1) which measures the ambient temperature of the semiconductor relays (D1-Dn). The electronic control device also includes an operation restricting means (P2) which, when the temperature measured by the temperature measuring means (P1) is higher than or equal to an operation restriction temperature threshold set within an ambient temperature range in which the self-protection shutoff function is not performed in the semiconductor relays (D1-Dn), performs control for opening semiconductor relays (Dj) that correspond to some loads (Lj) among the loads (L1-Ln).

摘要翻译： 本发明提供一种电子控制装置，其能够防止所有的半导体继电器被自我保护切断功能强制地控制为打开状态。 电子控制装置（E）控制设置在负载控制单元（U）中的半导体继电器（D1-Dn），其与安装在汽车中的负载（L1-Ln）相对应。 电子控制装置包括测量半导体继电器（D1-Dn）的环境温度的温度测量装置（P1）。 电子控制装置还包括操作限制装置（P2），当由温度测量装置（P1）测量的温度高于或等于设定在自保护的环境温度范围内的操作限制温度阈值时 在半导体继电器（D1-Dn）中不执行切断功能，执行用于打开对应于负载（L1-Ln）中的一些负载（Lj）的半导体继电器（Dj）的控制。

公开(公告)号：EP1451890B1

公开(公告)日：2011-02-02

申请号：EP02800982.7

申请日：2002-10-10

申请人： PEREGRINE SEMICONDUCTOR CORPORATION

发明人： BURGENER, Mark, L. ,  CABLE, James, S.

IPC分类号： H01P1/15 ,  H03K17/60

CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

公开(公告)号：EP1451890A4

公开(公告)日：2004-11-17

申请号：EP02800982

申请日：2002-10-10

申请人： PEREGRINE SEMICONDUCTOR CORP

发明人： BURGENER MARK L ,  CABLE JAMES S

IPC分类号： H01L21/822 ,  H01L27/04 ,  H01P1/15 ,  H03K17/06 ,  H03K17/693 ,  H03K17/60

CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF mode. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a "stacked" or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level-shifting voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

摘要翻译： RF开关电路（20）以绝缘体上硅“SOI”技术制造。 RF开关电路（20）包括用于交替地将RF输入信号（RF1，RF2）耦合到公共RF节点（35）的成对的开关和分流晶体管组（33,34,37,38）。 开关和分流晶体管组（33,34,37,38）包括以“堆叠”或串联配置连接在一起的一个或多个MSFET晶体管。 晶体管组（33,34），相关栅极电阻的堆叠增加了串联连接的开关晶体管两端的击穿电压，并用于改善RF开关压缩。 描述了完全集成的RF开关，其包括与RF开关元件（30）集成在一起的数字控制逻辑（110）和负电压发生器（120）。 在一个实施例中，完全集成的RF开关包括内置振荡器（202），电荷泵电路（206），电平移位分压器电路（500）和RF缓冲器电路（400）。 本发明的RF开关（20）提供了插入损耗，开关隔离和开关压缩的改进。