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公开(公告)号：EP2562800A2
公开(公告)日：2013-02-27
申请号：EP12181406.5
申请日：2012-08-22
IPC分类号： H01L21/66
CPC分类号： H01L22/26 , H01L21/67086 , H01L21/67253 , H01L22/12 , H01L33/0079
摘要： Approaches for substantially removing bulk aluminum nitride (140) from one or more layers (150) epitaxially grown on the bulk aluminum nitride (AIN) are discussed. The bulk AIN (140) is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AIN can be measured and used to control etching.
摘要翻译： 讨论了从在块状氮化铝（AlN）上外延生长的一个或多个层（150）基本去除块状氮化铝（140）的方法。 在蚀刻过程中，块体AIN（140）暴露于蚀刻剂。 在蚀刻过程中，可以测量体AIN的厚度并用于控制蚀刻。
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公开(公告)号：EP4000644A1
公开(公告)日：2022-05-25
申请号：EP21208820.7
申请日：2021-11-17
摘要： Methods and systems for disinfecting a surface, can include a light source, and a transparent window located above the light source. The light source can be integrated into an object, and an outer surface of the object can be located above the transparent window. Light from the light source can irradiate the outer surface through the transparent window and from within the object to disinfect the outer surface of the object. The light can comprise violet and ultraviolet (UV) light. A photocatalytic layer comprising a photocatalytic material may also be located above the transparent window and below the outer surface.
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公开(公告)号：EP3862809A1
公开(公告)日：2021-08-11
申请号：EP21152632.2
申请日：2021-01-20
摘要： An optical device has a first optical layer with a first dispersion response as a first function of wavelength. A second optical layer has a second dispersion response as a function of wavelength that is different than the first function. A separating layer is located between the first and second optical layers and has a lower refractive index than the first layer and the second layer. A thickness of the separating layer is selected such that the first and second dispersion responses combine to create an anomalous dispersion about a target wavelength. The anomalous dispersion results in the optical device emitting a wideband coherent optical output about the target wavelength in response to an optical input at the target wavelength.
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4.发明授权
公开(公告)号：EP3046192B1
公开(公告)日：2019-01-09
申请号：EP15196070.5
申请日：2015-11-24
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公开(公告)号：EP3229277A1
公开(公告)日：2017-10-11
申请号：EP17165342.1
申请日：2017-04-06
IPC分类号： H01L29/861 , H01L29/205 , H01L31/0248 , H01L33/32 , H01L33/02
CPC分类号： H01L33/0016 , H01L29/2003 , H01L29/205 , H01L29/861 , H01L33/02 , H01L33/32
摘要： A polarization controlled device has a first layer comprising a group III-nitride semiconductor substrate or template; a second group III-nitride semiconductor layer disposed over the group III-nitride semiconductor substrate or template; a third group III-nitride semiconductor layer disposed over the second group III-nitride semiconductor layer; and a fourth group III-nitride semiconductor layer disposed over the third group III-nitride semiconductor layer. A pn junction is formed at an interface between the third and fourth group III-nitride semiconductor layers. A polarization heterojunction is formed between the second group III-nitride semiconductor layer and the third group III-nitride semiconductor layer. The polarization junction has fixed charges of a polarity on one side of the polarization junction and fixed charges of an opposite polarity on an opposite side of the polarization junction. When unbiased, the pn junction comprises a first electric field that opposes the flow of carriers across the pn junction and the polarization junction comprises a second electric field that opposes the flow of oppositely charged carriers across the polarization junction.
摘要翻译： 偏振受控器件具有包含III族氮化物半导体衬底或模板的第一层; 设置在III族氮化物半导体衬底或模板上的第二III族氮化物半导体层; 设置在所述第二III族氮化物半导体层上的第三III族氮化物半导体层; 以及设置在第三III族氮化物半导体层上的第四III族氮化物半导体层。 pn结形成在第三和第四III族氮化物半导体层之间的界面处。 在第二III族氮化物半导体层与第三III族氮化物半导体层之间形成极化异质结。 偏振结在偏振结的一侧上具有固定的极性电荷，而在极化结的相对侧上具有相反极性的固定电荷。 当无偏压时，pn结包括第一电场，该第一电场与穿过pn结的载流子的流动相反，并且该极化结包括第二电场，该第二电场与极化结中的相反电荷载流的流动相反。
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公开(公告)号：EP3327795B1
公开(公告)日：2020-07-08
申请号：EP17202932.4
申请日：2017-11-21
发明人： BATRES, Max , YANG, Zhihong , WUNDERER, Thomas
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公开(公告)号：EP2562800A3
公开(公告)日：2013-11-13
申请号：EP12181406.5
申请日：2012-08-22
CPC分类号： H01L22/26 , H01L21/67086 , H01L21/67253 , H01L22/12 , H01L33/0079
摘要： Approaches for substantially removing bulk aluminum nitride (140) from one or more layers (150) epitaxially grown on the bulk aluminum nitride (AIN) are discussed. The bulk AIN (140) is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AIN can be measured and used to control etching.
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公开(公告)号：EP3413412A3
公开(公告)日：2019-04-17
申请号：EP18169636.0
申请日：2018-04-26
IPC分类号： H01S5/343 , H01S5/02 , H01S5/323 , H01L33/16 , H01S5/32 , H01S5/04 , H01S5/125 , H01S5/30 , H01L33/32
摘要： An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.
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公开(公告)号：EP3413412A2
公开(公告)日：2018-12-12
申请号：EP18169636.0
申请日：2018-04-26
CPC分类号： H01S5/34333 , H01L33/16 , H01L33/32 , H01S5/0205 , H01S5/04 , H01S5/125 , H01S5/3202 , H01S5/32341 , H01S2304/04
摘要： An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.
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公开(公告)号：EP3327795A1
公开(公告)日：2018-05-30
申请号：EP17202932.4
申请日：2017-11-21
发明人： BATRES, Max , YANG, Zhihong , WUNDERER, Thomas
摘要： A method of thinning a bulk aluminum nitride substrate includes providing a bulk aluminum nitride (AlN) substrate with at least one epitaxially grown group-III-nitride layer on a first side of the substrate, applying a slurry having a high pH to a second side of the substrate opposite the first side, chemical mechanically polishing the second side of the substrate using the slurry to remove at least a portion of the substrate, resulting in a thinned layer with a thickness less than 50 microns, and bonding the epitaxial layer to a non-native substrate. A device has at least one active zone in a layer of epitaxial Group-III-nitride material, the epitaxial Group-III-nitride layer having a defect density of less than or equal to 10 8 /cm 2 .
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