IMAGING DEVICE AND CAMERA SYSTEM
    1.
    发明公开

    公开(公告)号:EP4443896A1

    公开(公告)日:2024-10-09

    申请号:EP22901045.9

    申请日:2022-11-09

    摘要: An imaging device includes a first pixel, a second pixel, and a first voltage supply circuit. The first pixel includes a first photoelectric converter that generates signal charge by photoelectric conversion and a first signal detection circuit connected to the first photoelectric converter. The second pixel includes a second photoelectric converter, stacked above the first photoelectric converter, that generates signal charge by photoelectric conversion and a second signal detection circuit connected to the second photoelectric converter. The first voltage supply circuit supplies a voltage to the first photoelectric converter. The first photoelectric converter includes a first pixel electrode, a first counter electrode facing the first pixel electrode, and a first photoelectric conversion layer located between the first pixel electrode and the first counter electrode. A voltage that the first voltage supply circuit applies between the first pixel electrode and the first counter electrode is switched between a plurality of voltages in part of a one-frame period excluding a readout period and a reset period of the second photoelectric converter 13b.

    IMAGING DEVICE
    2.
    发明公开
    IMAGING DEVICE 审中-公开

    公开(公告)号:EP4145542A1

    公开(公告)日:2023-03-08

    申请号:EP21797327.0

    申请日:2021-04-15

    摘要: An imaging device includes a plurality of pixels. Each of the plurality of pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, contains a donor semiconductor material and an acceptor semiconductor material, and generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.