Semiconductor laser and method of making same
    1.
    发明公开
    Semiconductor laser and method of making same 失效
    半导体激光器及其制造方法。

    公开(公告)号:EP0073548A1

    公开(公告)日:1983-03-09

    申请号:EP82201063.3

    申请日:1982-08-30

    IPC分类号: H01S3/08

    摘要: A semiconductor laser having mirror faces (7, 8) serving as resonators, in which the active laser region (2) comprises end zones (11) adjoining the mirror faces (7, 8) and comprise implanted ions, preferably protons, with associated crystal damage. The end zones (11) have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones (11) substantially no non-radiating recombination occurs at the mirror faces (7, 8) so that mirror erosion is avoided.
    The invention also relates to a method in which the end zones (11) are formed by an ion bombardment on the upper surface of the semiconductor wafer with a number of lasers, which wafer at the area of the mirror (cleavage) faces to be formed is provided with grooves (20) which do not extent up to the active layer (3), in which grooves (20) the end zones (11) are provided via an ion bombardment through the active layer (3).

    Method of manufacturing a block-shaped support body for a semiconductor component
    2.
    发明公开
    Method of manufacturing a block-shaped support body for a semiconductor component 失效
    Verfahren zur Herstellung einesblockförmigenTrägerkörpersfüreine Halbleiterkomponente。

    公开(公告)号:EP0588406A1

    公开(公告)日:1994-03-23

    申请号:EP93202535.6

    申请日:1993-08-31

    IPC分类号: H01L33/00 H01S3/025 H05K1/00

    摘要: In the known method, a plate of a heat-conducting material, for example silicon, is subdivided by means of grooves into blocks which remain connected to one another along break-off edges. The plate is metallized on two sides and (locally) provided with layer-shaped regions comprising solder at the upper side, the diode laser being fastened within each region, after which the blocks are separated from one another by breaking-off.
    A disadvantage of this method is that the blocks thus obtained are not suitable for a final mounting in which the radiation beam of the diode laser is perpendicular to the carrier plate on which the support body is fastened.
    In a method according to the invention, mutually parallel grooves are provided in the plate and the plate is subdivided into strips whose longitudinal direction is perpendicular to the direction of the grooves which are at most two support bodies wide and whose side surfaces are substantially smooth and flat, and the upper surface and the side surfaces of the strips are provided with a conductive layer in one step, after which the layer-shaped regions comprising solder are provided on one of these surfaces. This method is simple, comprises comparatively few steps, and results in a large number of interconnected support bodies which are suitable for mounting with the support body tilted through 90°. This renders it possible to mount diode lasers on the support bodies before the latter are separated and to mount them finally relative to a carrier plate in such a way that the radiation beam is approximately perpendicular to the carrier plate. Preferably, strips having a width of exactly one support body are formed.

    摘要翻译: 在已知的方法中,导热材料(例如硅)的板通过凹槽被细分成块,其沿着断开边缘保持彼此连接。 该板在两侧金属化并且(局部地)设置有在上侧包括焊料的层状区域,二极管激光器被紧固在每个区域内,之后块通过断开彼此分离。 该方法的缺点在于,由此获得的块不适用于二极管激光器的辐射束垂直于固定有支撑体的承载板的最终安装。 在根据本发明的方法中,在板中设置相互平行的槽,并且板被细分成条,其长度方向垂直于至多两个支撑体宽的槽的方向,并且其侧表面基本上平滑, 平坦,并且条的上表面和侧表面在一个步骤中设置有导电层,之后在其中一个表面上设置包括焊料的层状区域。 该方法简单,包括较少的步骤,并且导致大量互连的支撑体,其适用于支撑体倾斜90°的安装。 这使得可以在支撑体分离之后将二极管激光器安装在支撑体上,并且相对于载板最终安装它们,使得辐射束大致垂直于载体板。 优选地,形成具有正好一个支撑体的宽度的条带。