摘要:
A semiconductor laser having mirror faces (7, 8) serving as resonators, in which the active laser region (2) comprises end zones (11) adjoining the mirror faces (7, 8) and comprise implanted ions, preferably protons, with associated crystal damage. The end zones (11) have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones (11) substantially no non-radiating recombination occurs at the mirror faces (7, 8) so that mirror erosion is avoided. The invention also relates to a method in which the end zones (11) are formed by an ion bombardment on the upper surface of the semiconductor wafer with a number of lasers, which wafer at the area of the mirror (cleavage) faces to be formed is provided with grooves (20) which do not extent up to the active layer (3), in which grooves (20) the end zones (11) are provided via an ion bombardment through the active layer (3).
摘要:
In the known method, a plate of a heat-conducting material, for example silicon, is subdivided by means of grooves into blocks which remain connected to one another along break-off edges. The plate is metallized on two sides and (locally) provided with layer-shaped regions comprising solder at the upper side, the diode laser being fastened within each region, after which the blocks are separated from one another by breaking-off. A disadvantage of this method is that the blocks thus obtained are not suitable for a final mounting in which the radiation beam of the diode laser is perpendicular to the carrier plate on which the support body is fastened. In a method according to the invention, mutually parallel grooves are provided in the plate and the plate is subdivided into strips whose longitudinal direction is perpendicular to the direction of the grooves which are at most two support bodies wide and whose side surfaces are substantially smooth and flat, and the upper surface and the side surfaces of the strips are provided with a conductive layer in one step, after which the layer-shaped regions comprising solder are provided on one of these surfaces. This method is simple, comprises comparatively few steps, and results in a large number of interconnected support bodies which are suitable for mounting with the support body tilted through 90°. This renders it possible to mount diode lasers on the support bodies before the latter are separated and to mount them finally relative to a carrier plate in such a way that the radiation beam is approximately perpendicular to the carrier plate. Preferably, strips having a width of exactly one support body are formed.
摘要:
A degree of contamination can be measured in a charged particle beam system by means of a contamination monitor which is provided with a carrier (3) having an aperture for transmitting a charged particle beam (7) and a membrane (5) which is connected to the carrier and which covers the aperture. The thickness of a contamination layer deposited on the membrane can be determined by measurement of a decrease of the transmission of the membrane as the contamination increases. The accuracy of measurement is enhanced by selecting a central portion of the particle beam transmitted by the membrane.