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7 条记录 (耗时 0.007 秒)

    IN-SITU MONITORING ON A SPINNING-DISK ION IMPLANTER
    2.
    发明公开
    IN-SITU MONITORING ON A SPINNING-DISK ION IMPLANTER 审中-公开
    原位监测上的唱盘离子注入

    公开(公告)号：EP1728262A2

    公开(公告)日：2006-12-06

    申请号：EP05725931.9

    申请日：2005-03-18

    申请人： Axcelis Technologies, Inc.

    发明人： PEREL, Alexander ,  LOIZIDES, William ,  STONE, Lyudmila ,  BENVENISTE, Victor

    IPC分类号： H01J37/317

    CPC分类号： G01N21/94 ,  G01N21/47 ,  G01N21/9501 ,  G01N2015/0693 ,  G01N2021/4702 ,  G01N2021/8416 ,  G01N2201/06113 ,  H01J2237/0225 ,  H01J2237/31701

    摘要： The present invention is directed to in-situ detection of particles and other such features in an ion implantation system (300) during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter (302) having a laser (322) for illumination of a spot on the wafer (308) and a pair of detectors (360) (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light (326) detected from the illuminated wafer (workpiece) (308), and may also map the light detected to a unique the present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such sysetms are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e, g., laser beam).The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e, g., PMT or photodiode ) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for tanslational scanning under fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position. For example, particles or other such contaminates may be identified on wafers during the implantation process before additional time and resources are consumed, and aid in determining the sources of such contaminates. Further, threshold analysis of the quantity or size of such particles, for example, may provide a system interlock for shutdown or feedback control.

    Method and apparatus for actively monitoring an inductively-coupled plasma ion source using an optical spectrometer
    3.
    发明公开
    Method and apparatus for actively monitoring an inductively-coupled plasma ion source using an optical spectrometer 审中-公开
    方法和装置用于监测活性感应耦合等离子体离子源与光学光谱仪

    公开(公告)号：EP2642507A2

    公开(公告)日：2013-09-25

    申请号：EP13159842.7

    申请日：2013-03-19

    申请人： FEI COMPANY

    发明人： Utlaut, Mark ,  Kellogg, Sean ,  Parker, N. William ,  Graupera, Anthony ,  Zhang, Shouyin ,  Brundage, Philip ,  Kinion, Doug

    IPC分类号： H01J37/08 ,  H01J37/304 ,  H01J37/305

    CPC分类号： H01J37/08 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/022 ,  H01J2237/0225 ,  H01J2237/31749

    摘要： A method and apparatus for actively monitoring conditions of a plasma source for adjustment and control of the source and to detect the presence of unwanted contaminant species in a plasma reaction chamber (220). Preferred embodiments include a spectrometer (252) used to quantify components of the plasma. A system controller is provided that uses feedback loops based on spectral analysis of the plasma to regulate the ion composition of the plasma source. The system also provides end pointing means based on spectral analysis to determine when cleaning of the plasma source is completed.

    摘要翻译： 一种用于主动监控用于源的调整和控制等离子体源的条件，并检测在等离子体反应室（220）不想要的污染物种类的存在的方法和装置。 优选实施方案包括用于量化所述等离子体的部件的光谱仪（252）。 本发明提供一种系统控制器那样采用基于等离子体的光谱分析反馈回路以调节等离子体源的离子组合物。 因此，该系统提供基于频谱分析来确定矿在清洁等离子源的完成结束指示装置。

    Method and apparatus for photomask plasma etching
    6.
    发明公开
    Method and apparatus for photomask plasma etching 审中-公开
    Verfahren und VorrichtungfürdasÄtzenvon Photomasken

    公开(公告)号：EP1612840A2

    公开(公告)日：2006-01-04

    申请号：EP05252818.9

    申请日：2005-05-09

    申请人： APPLIED MATERIALS, INC.

    发明人： Kumar, Ajay ,  Chandrachood, Madhavi ,  Anderson, Scott Alan ,  Satitpunwaycha, Peter ,  Yau, Wai Fan

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32651 ,  G03F1/80 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32871 ,  H01J2237/0225

    摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber (102) having a substrate support pedestal (124) adapted to receive a photomask substrate thereon. An ion-radical shield (170) is disposed above the pedestal (124). A substrate (122) is placed upon the pedestal beneath the ion-radical shield (170). A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield.

    摘要翻译： 本文提供了蚀刻光掩模的方法和设备。 在一个实施例中，蚀刻光掩模的方法包括提供具有适于在其上接收光掩模基板的基板支撑基座（124）的处理室（102）。 离子基屏蔽（170）设置在基座（124）的上方。 衬底（122）被放置在离子自由基屏蔽（170）下面的基座上。 工艺气体被引入到处理室中，并且从处理气体形成等离子体。 基底主要用通过屏蔽的自由基进行蚀刻。