METHOD FOR PLASMA DICING A SEMI-CONDUCTOR WAFER

    公开(公告)号:EP3594998A1

    公开(公告)日:2020-01-15

    申请号:EP19194081.6

    申请日:2014-03-03

    申请人: Plasma-Therm, LLC

    IPC分类号: H01L21/78 H01L21/683

    摘要: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

    METHOD AND APPARATUS FOR PLASMA DICING A SEMI-CONDUCTOR WAFER
    6.
    发明公开
    METHOD AND APPARATUS FOR PLASMA DICING A SEMI-CONDUCTOR WAFER 审中-公开
    VERFAHREN UND VORRICHTUNG ZUM PLASMA-SCHNEIDEN EINES HALBLEITERWAFERS

    公开(公告)号:EP3114703A1

    公开(公告)日:2017-01-11

    申请号:EP15700813.7

    申请日:2015-01-02

    申请人: Plasma-Therm, LLC

    IPC分类号: H01L21/3065 H01L21/78

    CPC分类号: H01L21/78 H01L21/3065

    摘要: The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

    摘要翻译: 本发明提供了一种等离子体切割基板的方法。 该方法包括:提供具有壁的处理室; 提供与处理室壁相邻的等离子体源; 在处理室内提供工件支撑件; 将基板放置在载体支架上以形成工件; 提供介于所述基板和所述框架之间的中间环; 将工件装载到工件支架上; 通过等离子体源产生等离子体; 并通过所产生的等离子体蚀刻工件。

    METHOD AND APPARATUS FOR PLASMA DICING A SEMI-CONDUCTOR WAFER

    公开(公告)号:EP3510625A1

    公开(公告)日:2019-07-17

    申请号:EP17817521.2

    申请日:2017-11-29

    申请人: Plasma-Therm, LLC

    摘要: The present invention provides a method for plasma dicing a substrate. The substrate is provided with a top surface and a bottom surface, the top surface of the substrate having a plurality of street areas and at least one device structure. The substrate is placed onto a support film on a frame to form a work piece. A process chamber having a plasma source is provided. A work piece support is provided within the plasma process chamber. The work piece is placed onto the work piece support. A plasma is generated from the plasma source in the plasma process chamber. The work piece is processed using the generated plasma and a byproduct generated from the support film while the support film is exposed to the generated plasma.