公开(公告)号：EP0965133A1

公开(公告)日：1999-12-22

申请号：EP98950996.0

申请日：1998-10-07

申请人： Programmable Microelectronics Corporation

发明人： CHANG, Shang-De, Ted ,  KOWSHIK, Vikram ,  YU, Andy, Teng-Feng ,  RADJY, Nader

IPC分类号： G11C16 ,  H01L21 ,  H01L27 ,  H01L29

CPC分类号： G11C16/0416 ,  G11C16/0433 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11536 ,  H01L29/7885

摘要： A nonvolatile memory array has a plurality of PMOS two transistor (2T) memory cells. Each 2T cell (40) includes a PMOS floating gate transistor (40a) and a PMOS select transistor (40b) and is connected between a bit line and a common source line. The select gate and the control gate of each 2T cell in a common row are connected to a word line and to a control gate line, respectively. The 2T cells of the array are programmed using a combination of FN tunneling and BTBT induced hot electron injection, and are erased using FN tunneling. In some embodiments, the array is divided into sectors, where each sector is defined by an n-well region and includes a predetermined number of rows of the 2T cells. Here, the source of each 2T cell in a sector is coupled to a common source line of the sector. In other embodiments, the bit lines of the array are segmented along sector boundaries.