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    MULTIPLEX MODULES FOR CARRIER AGGREGATION RECEIVERS
    3.
    发明公开
    MULTIPLEX MODULES FOR CARRIER AGGREGATION RECEIVERS 审中-公开
    多载波模块载波聚合接收机

    公开(公告)号：EP3205027A1

    公开(公告)日：2017-08-16

    申请号：EP15717311.3

    申请日：2015-03-23

    申请人： Qualcomm Incorporated

    发明人： TASIC, Aleksandar Miodrag ,  NARATHONG, Chiewcharn ,  HOLENSTEIN, Christian ,  PAN, Dongling ,  TANG, Yiwu ,  RANGARAJAN, Rajagopalan ,  LEUNG, Lai Kan

    IPC分类号： H04B1/00 ,  H03F1/22

    CPC分类号： H04L27/2653 ,  H03F1/223 ,  H03F3/193 ,  H03F3/245 ,  H04B1/0064 ,  H04L45/16 ,  H04L45/245

    摘要： Multiplex modules for use in carrier aggregation receivers are disclosed. In an exemplary embodiment, an apparatus includes an LNA multiplexer configured to receive a plurality of RF signals at a plurality of input terminals and to combine the RF signals into a combined RF signal that is output from an output terminal. The apparatus also includes an LNA demultiplexer configured to receive the combined RF signal at an input port that is connected to the output terminal and to distribute the combined RF signal to a plurality of output ports.

    摘要翻译： 公开了用于载波聚合接收机的多路复用模块。 在一个示例性实施例中，一种装置包括LNA多路复用器，其被配置为在多个输入端子处接收多个RF信号并且将这些RF信号组合成从输出端子输出的组合RF信号。该装置还包括LNA解复用器 被配置为在连接到输出端子的输入端口处接收组合的RF信号并且将组合的RF信号分配到多个输出端口。

    LOW NOISE AMPLIFIERS WITH TRANSFORMER-BASED SIGNAL SPLITTING FOR CARRIER AGGREGATION
    4.
    发明公开
    LOW NOISE AMPLIFIERS WITH TRANSFORMER-BASED SIGNAL SPLITTING FOR CARRIER AGGREGATION 有权
    与基于变压器的分枝信号载波聚合的低噪声放大器

    公开(公告)号：EP2856638A1

    公开(公告)日：2015-04-08

    申请号：EP13728071.5

    申请日：2013-05-24

    申请人： Qualcomm Incorporated

    发明人： DAVIERWALLA, Anosh Bomi ,  TASIC, Aleksandar Miodrag

    IPC分类号： H03F1/22 ,  H03F3/193

    CPC分类号： H04L27/2647 ,  H03F1/223 ,  H03F3/193 ,  H03F3/68 ,  H03F3/72 ,  H03G3/20

    摘要： Multiple-input multiple-output (MIMO) low noise amplifiers (LNAs) supporting carrier aggregation are disclosed. In an exemplary design, an apparatus (e.g., a wireless device, an integrated circuit, etc.) includes a MIMO LNA having a plurality of gain circuits, a drive circuit, and a plurality of load circuits. The gain circuits receive at least one input radio frequency (RF) signal and provide at least one amplified RF signal. Each gain circuit receives and amplifies one input RF signal and provides one amplified RF signal when the gain circuit is enabled. The at least one input RF signal include transmissions sent on multiple carriers at different frequencies to the wireless device. The drive circuit receives the at least one amplified RF signal and provides at least one drive RF signal. The load circuits receive the at least one drive RF signal and provide at least one output RF signal.

    OMNI-BAND AMPLIFIERS
    10.
    发明公开
    OMNI-BAND AMPLIFIERS 审中-公开
    OMNIBAND-VERSTÄRKER

    公开(公告)号：EP2920879A2

    公开(公告)日：2015-09-23

    申请号：EP13802154.8

    申请日：2013-11-12

    申请人： Qualcomm Incorporated

    发明人： TASIC, Aleksandar Miodrag ,  DAVIERWALLA, Anosh Bomi ,  NARATHONG, Chiewcharn ,  VAN ZALINGE, Klaas

    IPC分类号： H03F3/193 ,  H03F3/68 ,  H04B1/16

    CPC分类号： H04W88/02 ,  H03F3/193 ,  H03F3/68 ,  H04B1/0053

    摘要： Omni-band amplifiers supporting multiple band groups are disclosed. In an exemplary design, an apparatus (e.g., a wireless device, an integrated circuit, etc.) includes at least one gain transistor and a plurality of cascode transistors for a plurality of band groups. Each band group covers a plurality of bands. The gain transistor(s) receive an input radio frequency (RF) signal. The cascode transistors are coupled to the gain transistor(s) and provide an output RF signal for one of the plurality of band groups. In an exemplary design, the gain transistor(s) include a plurality of gain transistors for the plurality of band groups. One gain transistor and one cascode transistor are enabled to amplify the input RF signal and provide the output RF signal for the selected band group. The gain transistors may be coupled to different taps of a single source degeneration inductor or to different source degeneration inductors.

    摘要翻译： 公开了支持多个频带组的全频带放大器。 在示例性设计中，装置（例如，无线装置，集成电路等）包括用于多个频带组的至少一个增益晶体管和多个共源共栅晶体管。 每个带组覆盖多个频带。 增益晶体管接收输入射频（RF）信号。 共源共栅晶体管耦合到增益晶体管，并为多个带组中的一个提供输出RF信号。 在示例性设计中，增益晶体管包括用于多个带组的多个增益晶体管。 一个增益晶体管和一个共源共栅晶体管能够放大输入RF信号并提供所选频带组的输出RF信号。 增益晶体管可以耦合到单个源极退化电感器的不同抽头或不同的源极退化电感器。