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公开(公告)号：EP4411825A3
公开(公告)日：2024-11-13
申请号：EP24151011.4
申请日：2024-01-09
申请人： Qorvo US, Inc.
发明人： REESE, Elias , SHAHVERDI, Amin , KLEMMER, Nikolaus
IPC分类号： H01L29/40 , H01L29/417 , H01L29/423 , H01L21/338 , H01L29/778 , H01L29/10 , H01L23/31 , H01L29/20
摘要： This disclosure relates to a semiconductor structure and a method for fabrication of semiconductor structures, wherein the semiconductor structure is a quasi-dual-gate field-effect transistor structure having a floating ohmic contact and a field plate. The disclosed semiconductor structure comprises a substrate, a body region over the substrate having a top surface, a source ohmic contact, a drain ohmic contact, and a floating ohmic contact disposed between the source ohmic contact and the drain ohmic contact. The disclosed semiconductor structure further comprises a first dielectric layer disposed over an outermost surface of the body region, and a first gate electrode and a second gate electrode deposited in and around openings in the first dielectric layer and over opposite sides of the floating ohmic contact.
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公开(公告)号：EP4383565A1
公开(公告)日：2024-06-12
申请号：EP23215029.2
申请日：2023-12-07
申请人： Qorvo US, Inc.
CPC分类号： H03H9/542 , H03H9/547 , H03H9/605 , H03H9/6483 , H03H9/568
摘要： Embodiments of an acoustic filter are disclosed. In some embodiments, a bandpass filter is included in a passband signal path, the passband signal path is connected between a first terminal and a second terminal. A first bandstop filter is located in a first stopband signal path, the first stopband signal path connected at the first terminal. Additionally, a second bandstop filter is located in a second stopband signal path, the second stopband signal path is connected at the second terminal.
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公开(公告)号：EP4411825A2
公开(公告)日：2024-08-07
申请号：EP24151011.4
申请日：2024-01-09
申请人： Qorvo US, Inc.
发明人： REESE, Elias , SHAHVERDI, Amin , KLEMMER, Nikolaus
IPC分类号： H01L29/40 , H01L29/417 , H01L29/423 , H01L21/338 , H01L29/778 , H01L29/20
CPC分类号： H01L29/7786 , H01L29/66462 , H01L29/2003 , H01L29/402 , H01L29/41766 , H01L29/4232
摘要： This disclosure relates to a semiconductor structure and a method for fabrication of semiconductor structures, wherein the semiconductor structure is a quasi-dual-gate field-effect transistor structure having a floating ohmic contact and a field plate. The disclosed semiconductor structure comprises a substrate, a body region over the substrate having a top surface, a source ohmic contact, a drain ohmic contact, and a floating ohmic contact disposed between the source ohmic contact and the drain ohmic contact. The disclosed semiconductor structure further comprises a first dielectric layer disposed over an outermost surface of the body region, and a first gate electrode and a second gate electrode deposited in and around openings in the first dielectric layer and over opposite sides of the floating ohmic contact.
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公开(公告)号：EP4199353A1
公开(公告)日：2023-06-21
申请号：EP22210228.7
申请日：2022-11-29
申请人： Qorvo US, Inc.
摘要： A reactance cancelling radio frequency (RF) circuit array is disclosed. The reactance cancelling RF circuit array includes multiple RF circuits each coupled to one or two adjacent RF circuits by one or two pairs of coupling mediums each having a respective length less than one-quarter wavelength. In one aspect, an RF input signal is first split across the RF circuits and then combined to form an RF output signal. As a result, each RF circuit requires a lower power handling capability to process a portion of the RF input signal. In another aspect, each pair of the coupling mediums can cause reactance cancellation in each reactance-cancelling pair of the RF circuits. By coupling the RF circuits via the coupling mediums and enabling splitting-combining among the RF circuits, it is possible to miniaturize the reactance cancelling RF circuit array for improved performance across a wide frequency spectrum.
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