公开(公告)号：EP3213346A1

公开(公告)日：2017-09-06

申请号：EP15779164.1

申请日：2015-10-05

申请人： Qualcomm Incorporated

发明人： MENG, Xiongfei ,  CHUNG, Joon Hyung ,  PAN, Yuancheng Christopher

IPC分类号： H01L23/522 ,  H01L23/528 ,  H01L23/66

CPC分类号： H01L23/528 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/5286 ,  H01L23/535 ,  H01L23/66 ,  H01L27/0617 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus including a conductive stack structure includes an M
x layer interconnect on an M
x layer and extending in a first direction on a first track, an M
y layer interconnect on an M
y layer in which the My layer is a lower layer than the M
x layer, a first via stack coupled between the M
x layer interconnect and the M
y layer interconnect, a second via stack coupled between the M
x layer interconnect and the My layer interconnect, a second M
x layer interconnect extending in the first direction on a track immediately adjacent to the first track, and a third M
x layer interconnect extending in the first direction on a track immediately adjacent to the first track. The M
x layer interconnect is between the second M
x layer interconnect and the third M
x layer interconnect. The second M
x layer interconnect and the third M
x layer interconnect are uncoupled to each other.

摘要翻译： 一种包括导电堆叠结构的装置包括：Mx层上的Mx层互连，其在第一轨道上沿第一方向延伸; My层上的My层互连，其中My层是比Mx层更低的层; 耦合在Mx层互连和My层互连之间的第一通孔堆叠，耦合在Mx层互连和My层互连之间的第二通孔堆叠，在紧邻第一轨道的轨道上沿第一方向延伸的第二Mx层互连 以及在紧邻第一轨道的轨道上沿第一方向延伸的第三Mx层互连。 Mx层互连位于第二Mx层互连和第三Mx层互连之间。 第二Mx层互连和第三Mx层互连彼此解耦。