公开(公告)号：EP3134966B1

公开(公告)日：2018-08-29

申请号：EP15718119.9

申请日：2015-04-14

申请人： Qualcomm Incorporated

发明人： CHAN, Alan Ngar Loong ,  YEO, Gareth Seng Thai

IPC分类号： H03F1/32 ,  H03F1/52 ,  H03F3/45 ,  H03F3/72 ,  H03F3/24 ,  H03F3/193 ,  H03F1/02 ,  H03G1/00

CPC分类号： H03F1/0205 ,  H03F1/3211 ,  H03F1/523 ,  H03F3/193 ,  H03F3/21 ,  H03F3/245 ,  H03F3/45188 ,  H03F3/72 ,  H03F2200/129 ,  H03F2200/451 ,  H03F2200/541 ,  H03F2203/45024 ,  H03F2203/45116 ,  H03F2203/45302 ,  H03F2203/45731 ,  H03F2203/7206 ,  H03G1/0029 ,  H03G1/0088

摘要： An apparatus includes a differential cascode amplifier including a first transistor and a second transistor. The apparatus further includes a transistor including a source terminal coupled to a gate terminal of the first transistor of the differential cascode amplifier. The transistor also includes a drain terminal coupled to a gate terminal of the second transistor of the differential amplifier.

公开(公告)号：EP3134966A1

公开(公告)日：2017-03-01

申请号：EP15718119.9

申请日：2015-04-14

申请人： Qualcomm Incorporated

发明人： CHAN, Alan Ngar Loong ,  YEO, Gareth Seng Thai

IPC分类号： H03F3/45 ,  H03F3/24 ,  H03F3/72 ,  H03G1/00

CPC分类号： H03F1/0205 ,  H03F1/3211 ,  H03F1/523 ,  H03F3/193 ,  H03F3/21 ,  H03F3/245 ,  H03F3/45179 ,  H03F3/45188 ,  H03F3/72 ,  H03F2200/129 ,  H03F2200/451 ,  H03F2200/541 ,  H03F2203/45024 ,  H03F2203/45116 ,  H03F2203/45302 ,  H03F2203/45731 ,  H03F2203/7206 ,  H03G1/0029 ,  H03G1/0088

摘要： An apparatus includes a differential cascode amplifier including a first transistor and a second transistor. The apparatus further includes a transistor including a source terminal coupled to a gate terminal of the first transistor of the differential cascode amplifier. The transistor also includes a drain terminal coupled to a gate terminal of the second transistor of the differential amplifier.

摘要翻译： 一种装置包括具有第一晶体管和第二晶体管的差分共源共栅放大器。 该装置还包括晶体管，其包括耦合到差分共源共栅放大器的第一晶体管的栅极端子的源极端子。 晶体管还包括耦合到差分放大器的第二晶体管的栅极端子的漏极端子。