Deposition of insulating thin film by plurality of ion beams
    2.
    发明公开
    Deposition of insulating thin film by plurality of ion beams 失效
    通过多个离子束的绝缘薄膜的形成

    公开(公告)号:EP0739001A2

    公开(公告)日:1996-10-23

    申请号:EP96105811.2

    申请日:1996-04-12

    IPC分类号: G11B5/84

    摘要: A method of depositing insulating thin films on a substrate (50) employs a target (40) that is formed of material which includes a constituent element of the insulating thin film. An ion beam (35) preferably of inert gas is then directed toward the target (40) to disperse the target material. Simultaneously, a second ion beam (37) which includes another constituent element of the insulating thin film is also directed toward the substrate (50). The material from the target (40) and the element of the second ion beam (37) react in proper stoichiometry and is deposited onto the substrate (50) as the insulating thin film.