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公开(公告)号:EP0739001B1
公开(公告)日:2001-02-21
申请号:EP96105811.2
申请日:1996-04-12
发明人: Tan, Minshen , Tan, Swie-In
CPC分类号: C23C14/0052 , C23C14/081 , C23C14/46 , C23C14/505 , G11B5/232 , G11B5/313 , G11B5/8404
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公开(公告)号:EP0739001A2
公开(公告)日:1996-10-23
申请号:EP96105811.2
申请日:1996-04-12
发明人: Tan, Minshen , Tan, Swie-In
IPC分类号: G11B5/84
CPC分类号: C23C14/0052 , C23C14/081 , C23C14/46 , C23C14/505 , G11B5/232 , G11B5/313 , G11B5/8404
摘要: A method of depositing insulating thin films on a substrate (50) employs a target (40) that is formed of material which includes a constituent element of the insulating thin film. An ion beam (35) preferably of inert gas is then directed toward the target (40) to disperse the target material. Simultaneously, a second ion beam (37) which includes another constituent element of the insulating thin film is also directed toward the substrate (50). The material from the target (40) and the element of the second ion beam (37) react in proper stoichiometry and is deposited onto the substrate (50) as the insulating thin film.
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