摘要:
A method for maximizing the interfacial properties of sensors (10), such as spin valve and GMR sensors (10), used in storage devices, comprises selecting the materials for ferromagnetic layers (FM1, FM2) and for electrically conductive spacers (12) that are interposed between the ferromagnetic layers (FM1, FM2). The electronegativities of the selected materials are substantially matched so that the differences in electronegativities is minimized. The conductive spacer (12) material provides a relatively low resistivity and/or a large mean free path. The sensors (10) experience greater chemical and thermal stability, are corrosion resistant, and realize an increased signal output.
摘要:
A magnetic head assembly (28) includes a magnetoresistive (MR) read sensor (34) dielectrically disposed between a magnetic shield layer (48) and a first pole layer (44). A write transducer (2) comprises an inductive coil (40) having a plurality of windings dielectrically disposed between the first pole layer (44) and a second pole layer (46). The magnetic shield layer (48) partially overlaps portions of the coil windings (41). A nonmagnetic layer (50) is coplanar with the magnetic shield layer (48). A reduced coupling area between the magnetic shield layer (48) and the coil (40) decreases the mutual inductance applied to the magnetic coil by the magnetic layer, resulting in the coil (40) having better response to write current and being capable of operating at wider frequency ranges. The first pole layer (44) includes a unique shape having a narrow mid-section integrally formed between the wider end sections. The narrow mid-section of the first pole layer (44) also reduces the coupling area between the first pole layer (44) and the coil (40) and reduces the mutual inductance from the first pole layer (44) to the coil (40).
摘要:
A giant magnetoresistive dual spin valve sensor employs at least one magnetic biasing layer located adjacent to an antiferromagnetic layer in the spin valve structure which includes two pinned ferromagnetic layers (32, 33). The antiferromagnetic layer simultaneously pins the biasing layer and the ferromagnetic layer nearest the antiferromagnetic layer. This structure eliminates the bias point offset present in prior dual spin valve sensors.
摘要:
The air bearing surface (10) of an air bearing slider (12) is configured with a taper (20) formed at the slider leading end (14) and a rail (18) that is formed with a base (26) and two legs (22, 24). One leg extends from the base (26) partially toward the trailing end (16). The other leg extends from the base (26) to the trailing end (16) and is integrally formed of a rectangularly shaped section and one or more polygon-shaped sections. Inner and outer recesses (47, 49) are defined and separated by the rail (18), such that the slider is effectively insensitive to changes in ambient pressure, particularly from variations in altitude, so that a substantially constant flying height can be maintained.
摘要:
A giant magnetoresistive dual spin valve sensor employs at least one magnetic biasing layer located adjacent to an antiferromagnetic layer in the spin valve structure which includes two pinned ferromagnetic layers (32, 33). The antiferromagnetic layer simultaneously pins the biasing layer and the ferromagnetic layer nearest the antiferromagnetic layer. This structure eliminates the bias point offset present in prior dual spin valve sensors.
摘要:
A spin valve magnetoresistive sensor includes a substrate (1) and a layered structure formed on the substrate. The layered structure includes a pair of thin film layers (5, 12) of ferromagnetic material separated from each other by a nonmagnetic spacer. The direction of magnetization of one of the thin film layers is pinned by a first permanent magnet layer (6). A second permanent magnet layer (10) is located adjacent to the other of the thin film layers for longitudinal biasing purposes. The first permanent magnet layer (6) has significantly higher coercivity than the second permanent magnet layer (10).
摘要:
A magnetic head suspension assembly (10) for transducing data from and onto a surface of a rotating magnetic disk (4) includes a load beam (12) for supplying a directed force to a slider (16), so as to maintain the slider (16) at a desired height above the disk surface. A flexure (14) is secured to the load beam (12), and is formed of a flexible dielectric layer (55) on which a pattern of conductive traces (57-60) are formed. These conductive traces (57-60) are patterned for providing sufficient flexibility in various degrees of movement and stiffness to resist physical deformation, for imparting optimal mechanical and structural support to the slider (16) and to the load beam (12), and for electrically connecting the slider (16) to read/write electronic circuitry. In the preferred embodiment, the dielectric layer (55) is made of a polymeric resinous material, such as polyimide, and the conductive traces (57-60) are made of copper.
摘要:
A magnetic transducer employing giant magnetoresistance (GMR) has alternating ferromagnetic layers (13b,13e) and spacer layers (14a,14b), the spacer layers (14a,14b) having either different material compositions or different thicknesses across their widths to produce variations in the coupling between adjacent ferromagnetic layers across their widths. Longitudinal stabilization of the multi-layer GMR sensor is achieved by the use of exchange coupling layers (15a,15b) on the top and/or bottom of the sensor edge-track regions.
摘要:
A method of depositing insulating thin films on a substrate (50) employs a target (40) that is formed of material which includes a constituent element of the insulating thin film. An ion beam (35) preferably of inert gas is then directed toward the target (40) to disperse the target material. Simultaneously, a second ion beam (37) which includes another constituent element of the insulating thin film is also directed toward the substrate (50). The material from the target (40) and the element of the second ion beam (37) react in proper stoichiometry and is deposited onto the substrate (50) as the insulating thin film.