公开(公告)号：EP1474841A1

公开(公告)日：2004-11-10

申请号：EP02754528.4

申请日：2002-08-16

申请人： ROBERT BOSCH GMBH

发明人： SCHMIDT, Ewald ,  PFIZENMAIER, Heinz ,  HASCH, Juergen

IPC分类号： H01P7/06

CPC分类号： H01P7/065

摘要： The invention relates to a micromechanical resonator comprising a contactable resonance body and to a method for producing a micromechanical resonator for semiconductor components. According to the invention, the resonator (26) is comprised of a series of layers consisting of a first layer (16), which is made of silicon and provided for coupling the resonator using circuit technology, of an insulation layer (14) made of silicon dioxide, of a cylindrical base layer (cylinder 18), and of a metal layer (20) that completely surrounds the cylinder (18). The inventive method provides that a cylindrical structure (18) (cylinder) is etched (trench etching method), into a base layer (12), which is made of p-doped silicon (SOI wafer) and which is separated from a layer (16) made of silicon via an insulation layer (14) made of silicon dioxide, and said cylindrical structure (18) is coated with a metal layer (20).

公开(公告)号：EP1449255A1

公开(公告)日：2004-08-25

申请号：EP02754516.9

申请日：2002-08-09

申请人： ROBERT BOSCH GMBH

发明人： PFIZENMAIER, Heinz ,  HASCH, Juergen

IPC分类号： H01L27/12 ,  G01S13/93 ,  H01P7/10

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01P7/065

摘要： The invention relates to a high-frequency oscillator for an integrated semiconductor circuit and to the use thereof. The high-frequency oscillator (30) is part of the semiconductor circuit (10) (SOI wafer) comprising a first silicon layer (12), a silicon dioxide layer (insulating layer (14)) connected thereto, and a subsequent additional silicon layer (structural layer) 16)). The high-frequency oscillator (30) comprises: (a) a resonator (24) with a metallized cylinder (18), which is located in the structural layer (16) and made of silicon, and with a coupling disc (28), which covers the cylinder (18) in the area of the layer (12), and; (b) an IMPATT diode (32) that is connected to the cylinder (18) of the resonator (24) via a recess (38) of the coupling disc (28).

公开(公告)号：EP0324743A1

公开(公告)日：1989-07-26

申请号：EP87905597.0

申请日：1987-09-02

申请人： ROBERT BOSCH GMBH

发明人： CONZELMANN, Gerhard ,  PFIZENMAIER, Heinz

IPC分类号： H01L29 ,  H01L21 ,  H01L23 ,  H01L27

CPC分类号： H01L29/0692 ,  H01L23/66 ,  H01L29/0813 ,  H01L29/7322 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： Dans un transistor de puissance HF à technique épitaxiale bipolaire, les bornes d'émetteur (2), de base (3) et de collecteur (4) se situent toutes sur un plan principal de la plaquette de silicium. Sur le deuxième plan principal, opposé au premier, on peut appliquer une couche de métallisation (22) qui permet la connexion sans problèmes à un corps de refroidissement. A l'intérieur du substrat, des grilles de protection (13, 15) peuvent être agencées afin de compenser dans une large mesure l'effet indésirable de blocage des diodes de la couche de jonction.

公开(公告)号：EP1446824A2

公开(公告)日：2004-08-18

申请号：EP02754529.2

申请日：2002-08-16

申请人： ROBERT BOSCH GMBH

发明人： SCHMIDT, Ewald ,  PFIZENMAIER, Heinz ,  IRION, Hans ,  HASCH, Juergen

IPC分类号： H01L21/00

CPC分类号： H03B9/14 ,  G01S7/032 ,  H01L23/66 ,  H01L29/864 ,  H01L2224/16145 ,  H01L2924/01068 ,  H01L2924/12032 ,  H01Q9/0435 ,  H01Q19/062 ,  H01Q23/00 ,  H03B9/147 ,  H01L2924/00

摘要： The invention relates to an integrated semiconductor component for conducting high-frequency measurements and to the use thereof. According to the invention, the semiconductor component is part of a semiconductor circuit (10) (SOI wafer), comprised of a first silicon layer (12), of a silicon oxide layer (insulating layer (14)) connected thereto, and of a subsequent additional silicon layer (structural layer (16)). The semiconductor component is comprised of an IMPATT oscillator (30) provided with a resonator (24), which contains a metallized silicon cylinder (18) mounted in the structural layer (16), a coupling disk (28) that covers the cylinder (18) in the area of the first layer (12), and an IMPATT diode (32) that is connected to the cylinder (18) of the resonator (24) via a recess (38) of the coupling disk (28). The semiconductor component is also comprised of a reference oscillator (46) of a lower frequency provided with a resonator (24), which contains a metallized silicon cylinder (18) mounted in the structural layer (16), a coupling disk (28) that covers the cylinder in the area of the first layer (12), and a microwave conductor that is connected to the cylinder (18) of the resonator (24) via a recess (38) of the coupling disk (28). The reference oscillator serves to stabilize the frequency of the IMPATT oscillator (30) via an active oscillator circuit (58). The semiconductor component additionally comprises a receive mixer provided with integrated Schottky diodes and comprises a transmitting/receiving antenna.

公开(公告)号：EP0824764B1

公开(公告)日：2001-06-06

申请号：EP96946099.7

申请日：1996-12-19

申请人： ROBERT BOSCH GMBH

发明人： PFIZENMAIER, Heinz ,  PETRY, Hans-Peter

IPC分类号： H01Q1/44

CPC分类号： B60Q1/0023 ,  H01Q1/3291 ,  H01Q1/44

摘要： The invention concerns a head-lamp with an integrated microwave antenna, the head-lamp comprising a rotationally symmetrical paraboloidal reflector (21) and the microwaves being radiated in a directly lateral manner. To that end, an electrical feed element (15) is disposed laterally of the reflector (21) and at a suitable spacing in front of a light source (13), viewed in the radiation direction (14). The microwave system feed element (15) is arranged such that the radar beam is directed through the upper half of the reflector and focused. The beam path for the light source is represented by the marginal rays (131 and 132). The beam path for the microwave system feed element (15) is represented by marginal rays (151 and 152). According to the invention, the optical system with its light source (13) and the microwave system with its feed element (15) and/or receiver element are designed operationally and spatially such that they are completely independent of one another and are disposed separately. The two systems, each configured separately from the other in optimum manner, can then be fitted jointly in the common housing for the head-lamp.

公开(公告)号：EP0968404A1

公开(公告)日：2000-01-05

申请号：EP98914791.3

申请日：1998-02-20

申请人： ROBERT BOSCH GMBH

发明人： PFIZENMAIER, Heinz ,  VIOGTLAENDER, Klaus

IPC分类号： G01D5/48

CPC分类号： G01D5/48

摘要： The invention relates to a position or path sensor, comprising an electrical detection device which emits an electrical output signal, said signal being dependant on the position and/or movement of a mechanical part (2), especially a valve needle, in an injection system. The end (3) of said mechanical part (2) projects into a cavity (4;7) which is designed dimensionally in such a way that it forms a cavity resonator for a supplied electromagnetic wave with a set oscillation frequency in the microwave range. The electromagnetic wave which is detected with an antenna (14;8) in said cavity (4;7) can be influenced by a change in the position of said mechanical part (2) in terms of its values, especially a change in the phase position.

公开(公告)号：EP0060256A1

公开(公告)日：1982-09-22

申请号：EP81901812.0

申请日：1981-06-12

申请人： ROBERT BOSCH GMBH

发明人： BAUM, Helmut ,  PFIZENMAIER, Heinz ,  SCHMIDT, Ewald ,  STRAUSS, Franz

IPC分类号： G01L9 ,  G01D5 ,  H03B5

CPC分类号： H03B5/1847 ,  G01L9/007

摘要： On propose une jauge inductive sensible a la pression presentant au moins une partie d'une bobine d'oscillateur, cette partie determinant la frequence et etant situee au voisinage d'une membrane sensible a la pression. Lorsque la pression agit sur la membrane (12) on change l'inductivite de la bobine (13) et la frequence de l'oscillateur. La bobine (13) a une forme plate et la membrane (12) a une surface en ferrite ou en materiau bon conducteur. On prevoit en outre deux oscillateurs (15, 22) identiquement construits avec des bobines correspondantes (13, 20) travaillant dans des conditions thermiques identiques, un des oscillateurs travaillant sur une frequence fixe avec possibilite de mesures de pression absolues ou relatives a la pression ambiante. On peut faire aussi dependre les deux oscillateurs de la pression. Dans ce cas on peut mesurer la difference de pression entre deux milieux. Le signal de sortie s'obtient alors par melange. Les oscillateurs sont dans ce cas de preference formes comme elements a couche mince.

公开(公告)号：EP1370886B1

公开(公告)日：2009-03-11

申请号：EP01990361.6

申请日：2001-12-21

申请人： ROBERT BOSCH GMBH

发明人： SCHMIDT, Ewald ,  PFIZENMAIER, Heinz ,  IRION, Hans ,  HASCH, Juergen

IPC分类号： G01S7/03 ,  H01Q1/52 ,  H01Q9/04

CPC分类号： H01Q1/526 ,  G01S7/03 ,  G01S13/888 ,  H01Q9/0407

公开(公告)号：EP1449255B1

公开(公告)日：2006-12-06

申请号：EP02754516.9

申请日：2002-08-09

申请人： ROBERT BOSCH GMBH

发明人： PFIZENMAIER, Heinz ,  HASCH, Juergen

IPC分类号： H01L27/12 ,  G01S13/93 ,  H01P7/10

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01P7/065

摘要： The invention relates to a high-frequency oscillator for an integrated semiconductor circuit and to the use thereof. The high-frequency oscillator (30) is part of the semiconductor circuit (10) (SOI wafer) comprising a first silicon layer (12), a silicon dioxide layer (insulating layer (14)) connected thereto, and a subsequent additional silicon layer (structural layer) 16)). The high-frequency oscillator (30) comprises: (a) a resonator (24) with a metallized cylinder (18), which is located in the structural layer (16) and made of silicon, and with a coupling disc (28), which covers the cylinder (18) in the area of the layer (12), and; (b) an IMPATT diode (32) that is connected to the cylinder (18) of the resonator (24) via a recess (38) of the coupling disc (28).

公开(公告)号：EP0805990A1

公开(公告)日：1997-11-12

申请号：EP96943868.0

申请日：1996-10-11

申请人： ROBERT BOSCH GMBH

发明人： WAGNER, Klaus-Peter ,  WINTER, Klaus ,  PFIZENMAIER, Heinz

IPC分类号： G01S13

CPC分类号： G01S13/424 ,  G01S13/4445 ,  G01S13/4454 ,  G01S13/931 ,  G01S2013/9321

摘要： In a radar system which is used in particular in motor vehicles, the angle at which a detected radar target is located is determined in that echo signals from the radar target are received by at least two reception channels, signals whose amplitudes are standardised and compared with stored, standardised values of a bidirectional antenna diagram of the radar system.