公开(公告)号：EP3039709A1

公开(公告)日：2016-07-06

申请号：EP14739639.4

申请日：2014-06-23

Applicant: Raytheon Company

Inventor： LAROCHE, Jeffrey R. ,  HOKE, William E. ,  KAZIOR, Thomas E.

IPC: H01L21/20

CPC classification number: C23C16/18 ,  C30B1/023 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02667

Abstract: A method for depositing a column III-V material over a selected portion of a substrate through a window formed in a dielectric layer disposed over the selected portion of the substrate. The method includes forming a single crystal layer or polycrystalline layer over a field region of the dielectric layer adjacent to the window; and, growing, by MOCVD, a column III-V material over the single crystal layer or polycrystalline layer and through the window over the selected portion of the substrate.

公开(公告)号：EP3304592A1

公开(公告)日：2018-04-11

申请号：EP16730939.2

申请日：2016-05-31

Applicant: Raytheon Company

Inventor： LAROCHE, Jeffrey R. ,  BETTENCOURT, John P. ,  KAZIOR, Thomas E. ,  IP, Kelly P.

IPC: H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/66 ,  H01L21/76838 ,  H01L21/76847 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2223/6627 ,  H01L2223/6683

Abstract: A semiconductor structure having a semiconductor layer having an active device therein. A dielectric structure is disposed over the semiconductor layer, such dielectric structure having open ended trench therein. An electrical interconnect level is disposed in the trench and electrically connected to the active device. A plurality of stacked metal layers is disposed in the trench. The stacked metal layers have disposed on bottom and sidewalls thereof conductive barrier metal layers.