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    SEMICONDUCTOR DEVICE AND POWER CONTROL DEVICE
    1.
    发明公开
    SEMICONDUCTOR DEVICE AND POWER CONTROL DEVICE 审中-公开
    半导体器件和功率控制装置

    公开(公告)号：EP3297029A1

    公开(公告)日：2018-03-21

    申请号：EP17188615.3

    申请日：2017-08-30

    申请人： Renesas Electronics Corporation

    发明人： NAKAHARA, Yasushi ,  TODA, Tetsu ,  KUROIWA, Hiroshi ,  KANDA, Ryo

    IPC分类号： H01L29/40 ,  H01L29/78 ,  H01L29/861 ,  H03K17/0416 ,  H03K17/082

    CPC分类号： H02H7/0838 ,  H01L29/405 ,  H01L29/7816 ,  H01L29/861 ,  H02H1/04 ,  H03K17/0416 ,  H03K17/0822

    摘要： To realize a reduction in the number of parts in a system including a driver IC (semiconductor device). A high potential side power supply voltage (VP) is applied to a power supply application area (AR_VP). A high side area (AR_HVBK) is formed with a circuit which includes a driver driving a high side transistor (HA) and is operated at a boot power supply voltage (VB) with a floating voltage (VS) as a reference. A low side area (AR_LVBK) is formed with a circuit operated at a power supply voltage (VCC) with a low potential side power supply voltage (COM) as a reference. A first termination area (AR_TRMBK1) is disposed in a ring form so as to surround the power supply application area. A second termination area (AR_TRMBK2) is disposed in a ring form so as to surround the high side area.

    摘要翻译： 为了实现包括驱动器IC（半导体器件）的系统中的部件数量的减少。 高电位侧电源电压（VP）被施加到电源施加区域（AR_VP）。 高侧区域（AR_HVBK）由包括驱动高侧晶体管（HA）的驱动器并以浮动电压（VS）作为参考以开机电源电压（VB）运行的电路形成。 低电位侧区域（AR_LVBK）由以低电位侧电源电压（COM）作为基准的电源电压（VCC）工作的电路形成。 第一终端区域（AR_TRMBK1）以围绕供电应用区域的方式配置成环状。 第二终端区域（AR_TRMBK2）以包围高侧区域的方式配置成环状。