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公开(公告)号：EP0135118B1
公开(公告)日：1991-01-30
申请号：EP84109457.6
申请日：1984-08-08
申请人： Research Development Corporation of Japan , KABUSHIKI KAISHA RIKEN , THE FOUNDATION THE RESEARCH INSTITUTE OF ELECTRIC AND MAGNETIC ALLOYS , Masumoto, Tsuyoshi
CPC分类号： H01F41/18 , B22F9/008 , B22F9/14 , C23C14/0005 , C23C14/0036 , C23C14/022 , C23C14/34 , G11B5/714 , H01F1/1535 , H01F1/15358
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公开(公告)号：EP0172566A1
公开(公告)日：1986-02-26
申请号：EP85110463.8
申请日：1985-08-20
申请人： Research Development Corporation of Japan , KABUSHIKI KAISHA RIKEN , THE FOUNDATION THE RESEARCH INSTITUTE OF ELECTRIC AND MAGNETIC ALLOYS , Masumoto, Tsuyoshi
IPC分类号： G11B5/70
CPC分类号： G11B5/7305
摘要： A perpendicular magnetic recording medium is formed of a substrate having 5 x 10 5 - 5 x 10 9 fine projections per mm 2 on the surface thereof, said projections having heights in the range of 0.01 - 10 µm and diameters in the range of 0.01 -1 µm, and a ferromagnetic material deposited uniformly in a columnar form on the projections. The recording medium is produced by providing in advance fine projections, the heights and diameters of which are 0.01 - 10 µm and 0.01 - 1 µm respectively, on the surface of a substrate to a density of 5 x 10 5 - 5 x 10 9 projections per mm 2 , and then causing a ferromagnetic material to deposit on the substrate from a vapor phase in such a way that the deposited material is preferentially allowed to adhere onto the projections and then to grow the ferromagnetic material in a direction perpendicular to the plane of the substrate. The present invention has expanded the range of usable substrate-forming materials and recording materials, i.e., ferromagnetic materials, and has also simplified the production process.
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公开(公告)号：EP0172566B1
公开(公告)日：1988-07-06
申请号：EP85110463.8
申请日：1985-08-20
申请人： Research Development Corporation of Japan , KABUSHIKI KAISHA RIKEN , THE FOUNDATION THE RESEARCH INSTITUTE OF ELECTRIC AND MAGNETIC ALLOYS , Masumoto, Tsuyoshi
IPC分类号： G11B5/70
CPC分类号： G11B5/7305
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公开(公告)号：EP0135118A2
公开(公告)日：1985-03-27
申请号：EP84109457.6
申请日：1984-08-08
申请人： Research Development Corporation of Japan , KABUSHIKI KAISHA RIKEN , THE FOUNDATION THE RESEARCH INSTITUTE OF ELECTRIC AND MAGNETIC ALLOYS , Masumoto, Tsuyoshi
CPC分类号： H01F41/18 , B22F9/008 , B22F9/14 , C23C14/0005 , C23C14/0036 , C23C14/022 , C23C14/34 , G11B5/714 , H01F1/1535 , H01F1/15358
摘要： A method of producing fine particles with a particle size of submicron or finer which comprises the steps of:
forming closely fine projections on a substrate surface, preferably by sputter-etching using an ionized gas; and then
sputtering metallic or non-metallic materials onto the thus treated substrate in an inert gas or a mixed gas of an inert gas and a reactive gas, such as oxygen, the gas pressure of the inert gas or the mixed gas being in the range of from 1×10 -4 torr to 1×10 -1 torr, and thereby depositing the purposed fine particles in crystalline or amorphous form. The invention method can successfully provide fine particles with desired properties, for example, in size, shape and structure, by adjusting producing conditions or selection of substrate materials and the thus obtained fine particles are very useful in various applications with or without the substrate.-
公开(公告)号：EP0179466A3
公开(公告)日：1987-08-12
申请号：EP85113478
申请日：1985-10-23
申请人： Research Development Corporation of Japan , Suzuki, Kenji , Masumoto, Tsuyoshi , Ota, Nobuhiro , Mitera, Masao , Matsumoto, Akira , Masuda, Shuji
发明人： Suzuki, Kenji , Masumoto, Tsuyoshi , Ota, Nobuhiro , Okubo, Mika , Mitera, Masao , Matsumoto, Akira , Masuda, Shuji
IPC分类号： H01F01/34
摘要： This invention provides an amorphous ferromagnetic oxide represented by the formula
wherein A represents at least one of Bi 2 O 3' V 2 O 5 , TeO, and GeO 2 ; M represents at least one of Mn, Fe, Co, Ni, Cu, Mg, Zn, Cd, Ca, Pb, Ba. Sr and rare earth elements; when M is not a rare earth element, m=1 and n=1; when M is earth element, m= 2 and n=3; 0-
公开(公告)号：EP0135118A3
公开(公告)日：1987-05-13
申请号：EP84109457
申请日：1984-08-08
申请人： Research Development Corporation of Japan , Nakanouchi, Yukio , Ohnuma, Shigehiro , Masumoto, Tsuyoshi
CPC分类号： H01F41/18 , B22F9/008 , B22F9/14 , C23C14/0005 , C23C14/0036 , C23C14/022 , C23C14/34 , G11B5/714 , H01F1/1535 , H01F1/15358
摘要： A method of producing fine particles with a particle size of submicron or finer which comprises the steps of:
forming closely fine projections on a substrate surface, preferably by sputter-etching using an ionized gas; and then sputtering metallic or non-metallic materials onto the thus treated substrate in an inert gas or a mixed gas of an inert gas and a reactive gas, such as oxygen, the gas pressure of the inert gas or the mixed gas being in the range of from 1×10 -4 torr to 1×10 -1 torr, and thereby depositing the purposed fine particles in crystalline or amorphous form. The invention method can successfully provide fine particles with desired properties, for example, in size, shape and structure, by adjusting producing conditions or selection of substrate materials and the thus obtained fine particles are very useful in various applications with or without the substrate.-
7.发明公开Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom 失效氮化钛含有氮化硼的制造工艺和陶瓷复合材料产品从其。
公开(公告)号：EP0149044A1
公开(公告)日：1985-07-24
申请号：EP84113503.1
申请日：1984-11-08
申请人： Research Development Corporation of Japan , THE FURUKAWA ELECTRIC CO., LTD. , JAPAN METALS & CHEMICALS CO., LTD. , Hirai, Toshio , Masumoto, Tsuyoshi
发明人： Nakae, Hiroyuki , Matsuda, Toshitsugu , Uno, Naoki, c/o Furukawa Denko Kibogaoka Shataku , Matsunami, Yukio , Hirai, Toshio , Masumoto, Tsuyoshi
IPC分类号： C01B21/064 , C04B35/58 , C23C16/34
CPC分类号： C03C17/225 , C03C2217/281 , C03C2218/152 , C04B35/583 , C23C16/34
摘要： Boron nitride containing titanium nitride in an amount of 0.05 to 10 wt.% which is produced at a relatively low temperature, utilizing a chemical vapor deposition technique. In the deposition process, boron, titanium and nitrogen source gases are introduced into an evacuated reactor together with a carrier and/or diluent gas and contacted with a heated substrate previously mounted in the reactor, whereby boron nitride with titanium nitride is deposited onto the substrate. The deposit thus obtained has a high density, a significantly improved heat-shielding ability, a high degree of anisotropy with respect to thermal diffusivity and a high chemical stability. By using such anisotropic boron nitride with BN ceramics, very useful BN type composite ceramics can be produced.
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8.发明授权
公开(公告)号：EP0149044B1
公开(公告)日：1987-05-13
申请号：EP84113503.1
申请日：1984-11-08
申请人： Research Development Corporation of Japan , THE FURUKAWA ELECTRIC CO., LTD. , JAPAN METALS & CHEMICALS CO., LTD. , Hirai, Toshio , Masumoto, Tsuyoshi
发明人： Nakae, Hiroyuki , Matsuda, Toshitsugu , Uno, Naoki, c/o Furukawa Denko Kibogaoka Shataku , Matsunami, Yukio , Hirai, Toshio , Masumoto, Tsuyoshi
IPC分类号： C01B21/064 , C04B35/58 , C23C16/34
CPC分类号： C03C17/225 , C03C2217/281 , C03C2218/152 , C04B35/583 , C23C16/34
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公开(公告)号：EP0532038B1
公开(公告)日：1997-12-10
申请号：EP92115598.2
申请日：1992-09-11
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