Perpendicular magnetic recording medium and production process thereof
    5.
    发明公开
    Perpendicular magnetic recording medium and production process thereof 失效
    记录与垂直磁化及其制造方法平台。

    公开(公告)号:EP0172566A1

    公开(公告)日:1986-02-26

    申请号:EP85110463.8

    申请日:1985-08-20

    IPC分类号: G11B5/70

    CPC分类号: G11B5/7305

    摘要: A perpendicular magnetic recording medium is formed of a substrate having 5 x 10 5 - 5 x 10 9 fine projections per mm 2 on the surface thereof, said projections having heights in the range of 0.01 - 10 µm and diameters in the range of 0.01 -1 µm, and a ferromagnetic material deposited uniformly in a columnar form on the projections. The recording medium is produced by providing in advance fine projections, the heights and diameters of which are 0.01 - 10 µm and 0.01 - 1 µm respectively, on the surface of a substrate to a density of 5 x 10 5 - 5 x 10 9 projections per mm 2 , and then causing a ferromagnetic material to deposit on the substrate from a vapor phase in such a way that the deposited material is preferentially allowed to adhere onto the projections and then to grow the ferromagnetic material in a direction perpendicular to the plane of the substrate. The present invention has expanded the range of usable substrate-forming materials and recording materials, i.e., ferromagnetic materials, and has also simplified the production process.

    Permanent magnet material of high coercive force Pr-Co alloy and permanent magnet material of thin film and method of manufacturing the same
    6.
    发明公开
    Permanent magnet material of high coercive force Pr-Co alloy and permanent magnet material of thin film and method of manufacturing the same 失效
    从高矫顽性镨-Co合金和薄层永磁材料和制造工艺的永磁材料。

    公开(公告)号:EP0660338A1

    公开(公告)日:1995-06-28

    申请号:EP94120423.2

    申请日:1994-12-22

    IPC分类号: H01F1/055 H01F10/12

    摘要: The present invention relates to a permanent magnet material of an alloy and a thin film consisting essentially of Pr and Co and inevitable impurities, and further consisting at least one element selected from the group consisting of B, C, Fe, Cu, W, Ti, Ce and Sm as a secondary component and a method of manufacturing the permanent magnet comprising compacting or injection molding, then heating and sintering, and an object of the invention is to provide a small-sized and strong permanent magnet material having extremely large coercive force.
    A permanent magnet material of a high coercive force Pr-Co alloy having coercive force of more than 80 kA/m, which alloy consists essentially of 15-30 at% of Pr, the remainder Co and inevitable impurities and as a secondary component at least one element selected from the group consisting of 0.1-8 at% of B, C, Fe, Cu and W and 0.1-5 at% of Ti, Ce and Sm, and a method of manufacturing the same, and a Pr-Co thin film magnet material and a method of manufacturing the same.
    The present invention is to provide a method of manufacturing a permanent magnet having a high coercive force and consisting of the same component which comprises compacting or injection molding of same alloy powder, and then heating and sintering, so as to provide a small-sized and strong permanent magnet material having extremely high coercive force.

    摘要翻译: 本发明涉及一种永久磁铁的Cu在合金选自由B的材料和薄膜基本上由Pr和Co和不可避免的杂质,并且还包含至少一种元素,C,铁,钨,钛 ,Ce和钐作为副成分和制造该永久磁铁包括压实或注塑成型,然后加热和烧结,并且在本发明的目的是提供一种具有非常大的矫顽力的小尺寸的和强的永久磁铁材料的制造方法 , 在PR,剩余为Co和不可避免的杂质的%和至少一个次要分量具有大于80千安/米的矫顽力,这合金besteht本质的15-30的高矫顽力Pr-Co合金的永久磁铁材料 选自于B,C,Fe,Cu和W和0.1-5%的0.1-8由以钛,Ce和Sm中的%,以及制造其的方法,和PR-钴薄中选择的一种元素 电影的磁体材料及其制造方法。 本发明是提供一种制造永磁体具有高矫顽力,并且其包括压实或相同的合金粉末的注射成形,然后加热和烧结相同组分的组成的方法,以提供小尺寸和 具有非常高矫顽力很强的永磁材料。

    Solid solution semiconductor laser element material and laser element
    9.
    发明公开
    Solid solution semiconductor laser element material and laser element 失效
    固溶半导体激光元件材料和激光元件

    公开(公告)号:EP0551089A1

    公开(公告)日:1993-07-14

    申请号:EP93100064.0

    申请日:1993-01-05

    IPC分类号: H01S3/19

    摘要: The present invention relate to a solid solution semiconductor laser element material which can form a laser element which oscillates in an infrared region of wavelength 0.2-8 µm, varies wavelength and is operable in the vicinity of room temperature, particularly a laser element of a lattice-matching double hetero junction or lattice-matching quantum well structure. The disclosed solid state semiconductor is made of a material selected from a material having the general chemical formula



            Ca 1-x Pb x X



    where, 0



            Ca 1-x (Pb 1-y Y y ) x X



    where, 0



            Ca 1-x Pb x S 1-z Se z



    where, 0

    摘要翻译: 本发明涉及一种固体溶液型半导体激光元件用材料,其能够形成在波长0.2〜8μm的红外区域内振荡,波长可变且可在室温附近工作的激光元件,特别是晶格的激光元件 匹配双异质结或晶格匹配量子阱结构。 所公开的固态半导体由选自具有化学通式Ca1-xPbxX的材料的材料制成,其中,0