公开(公告)号：EP0149044A1

公开(公告)日：1985-07-24

申请号：EP84113503.1

申请日：1984-11-08

申请人： Research Development Corporation of Japan ,  THE FURUKAWA ELECTRIC CO., LTD. ,  JAPAN METALS & CHEMICALS CO., LTD. ,  Hirai, Toshio ,  Masumoto, Tsuyoshi

发明人： Nakae, Hiroyuki ,  Matsuda, Toshitsugu ,  Uno, Naoki, c/o Furukawa Denko Kibogaoka Shataku ,  Matsunami, Yukio ,  Hirai, Toshio ,  Masumoto, Tsuyoshi

IPC分类号： C01B21/064 ,  C04B35/58 ,  C23C16/34

CPC分类号： C03C17/225 ,  C03C2217/281 ,  C03C2218/152 ,  C04B35/583 ,  C23C16/34

摘要： Boron nitride containing titanium nitride in an amount of 0.05 to 10 wt.% which is produced at a relatively low temperature, utilizing a chemical vapor deposition technique. In the deposition process, boron, titanium and nitrogen source gases are introduced into an evacuated reactor together with a carrier and/or diluent gas and contacted with a heated substrate previously mounted in the reactor, whereby boron nitride with titanium nitride is deposited onto the substrate. The deposit thus obtained has a high density, a significantly improved heat-shielding ability, a high degree of anisotropy with respect to thermal diffusivity and a high chemical stability. By using such anisotropic boron nitride with BN ceramics, very useful BN type composite ceramics can be produced.

公开(公告)号：EP0149044B1

公开(公告)日：1987-05-13

申请号：EP84113503.1

申请日：1984-11-08

申请人： Research Development Corporation of Japan ,  THE FURUKAWA ELECTRIC CO., LTD. ,  JAPAN METALS & CHEMICALS CO., LTD. ,  Hirai, Toshio ,  Masumoto, Tsuyoshi

发明人： Nakae, Hiroyuki ,  Matsuda, Toshitsugu ,  Uno, Naoki, c/o Furukawa Denko Kibogaoka Shataku ,  Matsunami, Yukio ,  Hirai, Toshio ,  Masumoto, Tsuyoshi

IPC分类号： C01B21/064 ,  C04B35/58 ,  C23C16/34

CPC分类号： C03C17/225 ,  C03C2217/281 ,  C03C2218/152 ,  C04B35/583 ,  C23C16/34

公开(公告)号：EP0216932B1

公开(公告)日：1992-05-13

申请号：EP86901511.5

申请日：1986-02-27

申请人： Research Development Corporation of Japan ,  JAPAN METALS & CHEMICALS CO., LTD. ,  THE FURUKAWA ELECTRIC CO., LTD. ,  Hirai, Toshio

发明人： Matsuda, Toshitsugu ,  Nakae, Hiroyuki ,  Hirai, Toshio

IPC分类号： C01B21/064 ,  C23C16/34

CPC分类号： C23C16/342 ,  C01B21/064 ,  C01P2002/72 ,  C01P2004/03 ,  C04B35/583 ,  C04B35/5831 ,  C30B35/002 ,  Y10S148/113

摘要： Highly pure, high-density rhombohedral polycrystalline boron nitride substantially comprising rhombohedral crystals and having a three-fold axis of symmetry (an axis parallel to axis c according to hexagonal representation) oriented to one direction, which can be obtained in an arbitrary mass or thin film form by a chemical vapor deposition process of introducing a boron source gas and a nitrogen source gas and, optionally, a diluting and carrier gas into a reactor provided with a heated base to deposit boron nitride on the base, while providing a nitrogen source gas- and/or a carrier gas-diffusing layer around the heated base. The resulting boron nitride is extremely useful as semiconductors, crucibles for melting, various high-temperature jigs, high-frequency insulators, microwave transmitting apertures, and boron source for semi-conductors and, in addition, optimal as a precursor of high-pressure phase cubic boron nitride.

摘要翻译： 高纯度，高密度的菱形多晶氮化硼，其基本上包含菱形晶体并且具有朝向一个方向的三重对称轴（与六角形表示的轴c平行的轴），其可以以任意质量或薄 通过化学气相沉积工艺将硼源气体和氮源气体以及任选的稀释气体和载气引入具有加热基底的反应器中，以在基底上沉积氮化硼，同时提供氮源气体 - 和/或围绕加热基座的载气扩散层。 所得到的氮化硼作为半导体，熔化用坩埚，各种高温夹具，高频绝缘体，微波通过孔，半导体用硼源等非常有用，而且作为高压相 立方氮化硼。

公开(公告)号：EP0216932A1

公开(公告)日：1987-04-08

申请号：EP86901511.5

申请日：1986-02-27

申请人： Research Development Corporation of Japan ,  JAPAN METALS & CHEMICALS CO., LTD. ,  THE FURUKAWA ELECTRIC CO., LTD. ,  Hirai, Toshio

发明人： Matsuda, Toshitsugu ,  Nakae, Hiroyuki ,  Hirai, Toshio

IPC分类号： C01B21/064 ,  C23C16/34

CPC分类号： C23C16/342 ,  C01B21/064 ,  C01P2002/72 ,  C01P2004/03 ,  C04B35/583 ,  C04B35/5831 ,  C30B35/002 ,  Y10S148/113

摘要： Highly pure, high-density rhombohedral polycrystalline boron nitride substantially comprising rhombohedral crystals and having a three-fold axis of symmetry (an axis parallel to axis c according to hexagonal representation) oriented to one direction, which can be obtained in an arbitrary mass or thin film form by a chemical vapour deposition process of introducing a boron source gas and a nitrogen source gas and, optionally, a diluting and carrier gas into a reactor provided with a heated base to deposit boron nitride on the base, while providing a nitrogen source gas- and/or a carrier gas-diffusing layer around the heated base. The resulting boron nitride is extremely useful as semiconductors, crucibles for melting, various high-temperature jigs, high-frequency insulators, microwave transmitting apertures, and boron source for semi-conductors and, in addition, optimal as a precursor of high-pressure phase cubic boron nitride.

公开(公告)号：EP0377317B1

公开(公告)日：1994-08-24

申请号：EP89313562.4

申请日：1989-12-22

申请人： JAPAN METALS & CHEMICALS CO., LTD.

发明人： Matsuda, Toshitsugu ,  Saitoh, Sinichi ,  Yonezawa, Takao ,  Sakai, Chorji ,  Abe, Katsuyuki ,  Minamizawa, Masatoshi ,  Sato, Kazuki

IPC分类号： C04B35/80

CPC分类号： C04B35/584 ,  C04B35/806

公开(公告)号：EP0377317A1

公开(公告)日：1990-07-11

申请号：EP89313562.4

申请日：1989-12-22

申请人： JAPAN METALS & CHEMICALS CO., LTD.

发明人： Matsuda, Toshitsugu ,  Saitoh, Sinichi ,  Yonezawa, Takao ,  Sakai, Chorji ,  Abe, Katsuyuki ,  Minamizawa, Masatoshi ,  Sato, Kazuki

IPC分类号： C04B35/80

CPC分类号： C04B35/584 ,  C04B35/806

摘要： A ceramics composite article of high strength and superior toughness, wherein whiskers are dispersed in its matrix and said dispersed whiskers are oriented parallel to the outer surface of the ceramics article and also in two-dimensionally random directions over the whole thickness from the outer surface to the inner surface of the ceramics article.
The invention extends to a method of making such an article.

摘要翻译： 一种高强度和高韧性的陶瓷复合材料制品，其中晶须分散在其基体中，并且所述分散的晶须取向平行于陶瓷制品的外表面，并且还在从外表面到整个厚度的二维随机方向上取向 陶瓷制品的内表面。 本发明延伸至制造这种制品的方法。