IMPROVED POLISHING SLURRIES AND METHODS FOR THEIR USE
    2.
    发明公开
    IMPROVED POLISHING SLURRIES AND METHODS FOR THEIR USE 失效
    改进的抛光使用浆料及其工艺

    公开(公告)号:EP0868543A1

    公开(公告)日:1998-10-07

    申请号:EP96936459.0

    申请日:1996-10-04

    申请人: RODEL, INC.

    IPC分类号: B24B37 C09G1 C09K3 C23F1 C23F3 H01L21

    摘要: An aqueous slurry is provided for polishing or planarizing a workpiece which contains a metal, the solids portion of said slurry being comprised of about 1 to about 50 percent by weight of submicron alpha-alumina, the remainder of the solids being of a substantially less abrasive composition chosen from one or more of the group consisting of aluminum hydrates, aluminum hydroxides, gamma-alumina, delta-alumina, amorphous alumina, and amorphous silica. Also provided is a method for polishing the surface of a work piece which contains a metal wherein said aqueous slurry is used as the polishing composition during chemical-mechanical polishing.

    ACTIVATED POLISHING COMPOSITIONS
    3.
    发明授权
    ACTIVATED POLISHING COMPOSITIONS 失效
    活性炭抛光剂组合

    公开(公告)号:EP0717762B1

    公开(公告)日:2001-06-20

    申请号:EP94927305.6

    申请日:1994-09-02

    申请人: RODEL, INC.

    IPC分类号: C09G1/02

    CPC分类号: C09K3/1454

    摘要: Disclosed is a process for preparing activated compositions and the compositions derived therefrom which are suitable for polishing surfaces, particularly integrated circuits, wherein a base abrasive is activated by addition of a second cation whose oxide exhibits a higher polishing rate than the base abrasive alone. The activation is effected by chemical adsorption of the activating cation onto the base abrasive during cyclic impact in an aqueous medium whose pH is at a level which is favorable for adsorption of the activating cation onto the base abrasive surface.

    COMPOSITIONS FOR POLISHING SILICON WAFERS AND METHODS
    4.
    发明授权
    COMPOSITIONS FOR POLISHING SILICON WAFERS AND METHODS 失效
    抛光剂组合物用于硅盘和方法

    公开(公告)号:EP0840664B1

    公开(公告)日:2001-03-07

    申请号:EP96916757.6

    申请日:1996-05-30

    申请人: Rodel, Inc.

    摘要: An improved slurry composition and methods of using it are provided for final polishing of silicon wafers. The composition comprises water, submicron silica particles between 0.2 and 0.5 percent by weight of this composition, a salt at a concentration of about 100 to about 1000 ppm, an amine compound at a concentration sufficient to effect a composition pH of about 8 to about 11, and a polyelectrolyte dispersion agent at a concentration of about 20 to about 500 ppm, wherein the composition has a total sodium and potassium content below about 1 ppm, and an iron, nickel, and copper content each below about 0.1 ppm, all ppm being parts per million by weight of the composition.

    COMPOSITIONS AND METHODS FOR POLISHING SILICA, SILICATES, AND SILICON NITRIDE
    5.
    发明公开
    COMPOSITIONS AND METHODS FOR POLISHING SILICA, SILICATES, AND SILICON NITRIDE 失效
    组合物和方法用于抛光二氧化硅,硅酸盐和氮化硅

    公开(公告)号:EP0851798A1

    公开(公告)日:1998-07-08

    申请号:EP97945165.0

    申请日:1997-02-26

    申请人: RODEL, INC.

    IPC分类号: C09G1

    CPC分类号: C09G1/02

    摘要: A composition is provided, which is suitable for polishing SiO2, silicates, and silicon nitride, comprising an aqueous slurry of submicron SiO2 particles and a soluble inorganic salt or combination of soluble inorganic salts of total solution concentration below the critical coagulation concentration for the slurry, wherein the slurry pH is adjusted to within the range of about 9 to 10 by addition of a soluble amine or mixture of soluble amines. Optionally, the compositions of this invention may also comprise a polyhydric alcohol.

    ACTIVATED POLISHING COMPOSITIONS
    7.
    发明公开
    ACTIVATED POLISHING COMPOSITIONS 失效
    活性炭抛光剂组合

    公开(公告)号:EP0717762A1

    公开(公告)日:1996-06-26

    申请号:EP94927305.0

    申请日:1994-09-02

    申请人: RODEL, INC.

    IPC分类号: C01B33 C09K3 H01L21

    CPC分类号: C09K3/1454

    摘要: Disclosed is a process for preparing activated compositions and the compositions derived therefrom which are suitable for polishing surfaces, particularly integrated circuits, wherein a base abrasive is activated by addition of a second cation whose oxide exhibits a higher polishing rate than the base abrasive alone. The activation is effected by chemical adsorption of the activating cation onto the base abrasive during cyclic impact in an aqueous medium whose pH is at a level which is favorable for adsorption of the activating cation onto the base abrasive surface.